Ikunori Takata

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having insulated gate bipolar transistor
- Patent number 5,559,348
- Issue date Sep 24, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoto Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit protective circuit and power darlington transistor mo...
- Patent number 5,526,214
- Issue date Jun 11, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Ikunori Takata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Biopolar/Darlington transistor having enhanced comprehensive electr...
- Patent number 5,397,913
- Issue date Mar 14, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Ikunori Takata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having multilayer structure
- Patent number 5,229,313
- Issue date Jul 20, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Ikunori Takata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a multilayer electrode structure and me...
- Patent number 5,111,267
- Issue date May 5, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Ikunori Takata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor
- Patent number 4,827,322
- Issue date May 2, 1989
- Mitsubishi Benki Kabushiki Kaisha
- Ikunori Takata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 4,652,902
- Issue date Mar 24, 1987
- Mitsubishi Denki Kabushiki Kaisha
- Ikunori Takata
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Ikunori Takata

Person

Patents Grantslast 30 patents

Semiconductor device having insulated gate bipolar transistor

Short-circuit protective circuit and power darlington transistor mo...

Biopolar/Darlington transistor having enhanced comprehensive electr...

Method of making a semiconductor device having multilayer structure

Semiconductor device having a multilayer electrode structure and me...

Power transistor

Power semiconductor device