Imran Hashim

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked hybrid micro LED pixel architecture
- Patent number 10,923,023
- Issue date Feb 16, 2021
- Andreas Bibl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backplane LED integration and functionalization structures
- Patent number 10,497,682
- Issue date Dec 3, 2019
- Apple Inc.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a doped metal oxide for use in resistive switchi...
- Patent number 9,543,516
- Issue date Jan 10, 2017
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded nonvolatile memory elements having resistive switching cha...
- Patent number 9,444,047
- Issue date Sep 13, 2016
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Current selector for non-volatile memory in a cross bar array based...
- Patent number 9,397,141
- Issue date Jul 19, 2016
- Intermolecular, Inc.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High productivity combinatorial workflow to screen and design chalc...
- Patent number 9,305,791
- Issue date Apr 5, 2016
- Intermolecular, Inc.
- Imran Hashim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nonvolatile memory device having a current limiting element
- Patent number 9,299,928
- Issue date Mar 29, 2016
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using a tunnel oxide layer and oxygen blo...
- Patent number 9,299,926
- Issue date Mar 29, 2016
- Intermolecular, Inc.
- Mihir Tendulkar
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM MIM capacitor using non-noble electrodes
- Patent number 9,281,357
- Issue date Mar 8, 2016
- Intermolecular, Inc.
- Hanhong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays for both good data retention and low power operation
- Patent number 9,275,913
- Issue date Mar 1, 2016
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Diffusion barrier layer for resistive random access memory cells
- Patent number 9,246,097
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,246,096
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device having an electrode interface coupling re...
- Patent number 9,184,383
- Issue date Nov 10, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an asymmetric MIMCAP or a Schottky device as a se...
- Patent number 9,177,998
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Venkat Ananthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cell having three or more resistive...
- Patent number 9,178,148
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive-switching memory elements having improved switching chara...
- Patent number 9,178,146
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Ronald J. Kuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive-switching memory elements having improved switching chara...
- Patent number 9,178,147
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Ronald J. Kuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function tailoring for nonvolatile memory applications
- Patent number 9,178,151
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve electrical performance of ZrO2 based high-K diel...
- Patent number 9,178,006
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded nonvolatile memory elements having resistive switching cha...
- Patent number 9,129,894
- Issue date Sep 8, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Atomic layer deposition of metal oxide materials for memory applica...
- Patent number 9,130,165
- Issue date Sep 8, 2015
- Intermolecular, Inc.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
ZrO-based high K dielectric stack for logic decoupling capacitor or...
- Patent number 9,099,430
- Issue date Aug 4, 2015
- Intermolecular, Inc.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal oxide bilayers
- Patent number 9,087,978
- Issue date Jul 21, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cells having metal alloy current lim...
- Patent number 9,054,307
- Issue date Jun 9, 2015
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive-switching memory elements having improved switching chara...
- Patent number 9,012,881
- Issue date Apr 21, 2015
- Intermolecular, Inc.
- Ronald J. Kuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer for resistive random access memory cells
- Patent number 9,006,023
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,006,026
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cell having three or more resistive...
- Patent number 9,001,554
- Issue date Apr 7, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device having a current limiting element
- Patent number 8,995,172
- Issue date Mar 31, 2015
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal oxide bilayers
- Patent number 8,987,697
- Issue date Mar 24, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Test Architecture for High Throughput Testing of Pixel Driver Chips...
- Publication number 20240105525
- Publication date Mar 28, 2024
- Apple Inc.
- Imran Hashim
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
BACKPLANE LED INTEGRATION AND FUNCTIONALIZATION STRUCTURES
- Publication number 20190006329
- Publication date Jan 3, 2019
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Resistive Switching Memory Elements
- Publication number 20160172588
- Publication date Jun 16, 2016
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Improve DRAM Performance
- Publication number 20160093625
- Publication date Mar 31, 2016
- Intermolecular, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...
- Publication number 20150325788
- Publication date Nov 12, 2015
- INTERMOLECULAR INC.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to Improve Electrical Performance of ZrO2 Based High-K Diel...
- Publication number 20150228710
- Publication date Aug 13, 2015
- Elpida Memory, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20150200361
- Publication date Jul 16, 2015
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffusion Barrier Layer for Resistive Random Access Memory Cells
- Publication number 20150188048
- Publication date Jul 2, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20150179935
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or...
- Publication number 20150179730
- Publication date Jun 25, 2015
- Intermolecular, Inc.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cell Having Three or More Resistive...
- Publication number 20150171323
- Publication date Jun 18, 2015
- INTERMOLECULAR INC.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric K Value Tuning of HAH Stack for Improved TDDB Performanc...
- Publication number 20150170837
- Publication date Jun 18, 2015
- Intermolecular, Inc.
- Sucharita Madhukar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays for Both Good Data Retention and Low Power Operation
- Publication number 20150171095
- Publication date Jun 18, 2015
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory Device Having a Current Limiting Element
- Publication number 20150162530
- Publication date Jun 11, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive-Switching Memory Elements Having Improved Switching Chara...
- Publication number 20150155486
- Publication date Jun 4, 2015
- Intermolecular, Inc.
- Ronald J. Kuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM MIM Capacitor Using Non-Noble Electrodes
- Publication number 20150137315
- Publication date May 21, 2015
- Intermolecular, Inc.
- Hanhong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM MIM Capacitor Using Non-Noble Electrodes
- Publication number 20150087130
- Publication date Mar 26, 2015
- Elpida Memory, Inc.
- Hanhong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...
- Publication number 20150056749
- Publication date Feb 26, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Resistive Memory Element With an Integrated Oxygen Isol...
- Publication number 20150017780
- Publication date Jan 15, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffusion Barrier Layer for Resistive Random Access Memory Cells
- Publication number 20150011071
- Publication date Jan 8, 2015
- Internolecular Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming an Asymmetric MIMCAP or a Schottky Device as a Se...
- Publication number 20150001676
- Publication date Jan 1, 2015
- Intermolecular, Inc.
- Venkat Ananthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140374240
- Publication date Dec 25, 2014
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20140363920
- Publication date Dec 11, 2014
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Resistive Memory Element With A Metal Nitride Containin...
- Publication number 20140361235
- Publication date Dec 11, 2014
- Yun Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICE
- Publication number 20140353567
- Publication date Dec 4, 2014
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...
- Publication number 20140315369
- Publication date Oct 23, 2014
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
High Productivity Combinatorial Workflow to Screen and Design Chalc...
- Publication number 20140273314
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Imran Hashim
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Current Selector for Non-Volatile Memory in a Cross Bar Array Based...
- Publication number 20140264252
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140224645
- Publication date Aug 14, 2014
- INTERMOLECULAR INC.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Resistive-Switching Memory Elements Having Improved Switching Chara...
- Publication number 20140225056
- Publication date Aug 14, 2014
- Intermolecular, Inc.
- Ronald J. Kuse
- H01 - BASIC ELECTRIC ELEMENTS

Imran Hashim

Person

Patents Grantslast 30 patents

Stacked hybrid micro LED pixel architecture

Backplane LED integration and functionalization structures

Method for forming a doped metal oxide for use in resistive switchi...

Embedded nonvolatile memory elements having resistive switching cha...

Current selector for non-volatile memory in a cross bar array based...

High productivity combinatorial workflow to screen and design chalc...

Nonvolatile memory device having a current limiting element

Nonvolatile memory device using a tunnel oxide layer and oxygen blo...

DRAM MIM capacitor using non-noble electrodes

Memory arrays for both good data retention and low power operation

Diffusion barrier layer for resistive random access memory cells

Atomic layer deposition of metal oxides for memory applications

Nonvolatile memory device having an electrode interface coupling re...

Method of forming an asymmetric MIMCAP or a Schottky device as a se...

Resistive random access memory cell having three or more resistive...

Resistive-switching memory elements having improved switching chara...

Resistive-switching memory elements having improved switching chara...

Work function tailoring for nonvolatile memory applications

Methods to improve electrical performance of ZrO2 based high-K diel...

Embedded nonvolatile memory elements having resistive switching cha...

Atomic layer deposition of metal oxide materials for memory applica...

ZrO-based high K dielectric stack for logic decoupling capacitor or...

Transition metal oxide bilayers

Resistive random access memory cells having metal alloy current lim...

Resistive-switching memory elements having improved switching chara...

Diffusion barrier layer for resistive random access memory cells

Atomic layer deposition of metal oxides for memory applications

Resistive random access memory cell having three or more resistive...

Nonvolatile memory device having a current limiting element

Transition metal oxide bilayers

Patents Applicationslast 30 patents

Test Architecture for High Throughput Testing of Pixel Driver Chips...

BACKPLANE LED INTEGRATION AND FUNCTIONALIZATION STRUCTURES

Method For Forming Resistive Switching Memory Elements

Method to Improve DRAM Performance

Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...

Methods to Improve Electrical Performance of ZrO2 Based High-K Diel...

Transition Metal Oxide Bilayers

Diffusion Barrier Layer for Resistive Random Access Memory Cells

Atomic Layer Deposition of Metal Oxides for Memory Applications

ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or...

Resistive Random Access Memory Cell Having Three or More Resistive...

Dielectric K Value Tuning of HAH Stack for Improved TDDB Performanc...

Memory Arrays for Both Good Data Retention and Low Power Operation

Nonvolatile Memory Device Having a Current Limiting Element

Resistive-Switching Memory Elements Having Improved Switching Chara...

DRAM MIM Capacitor Using Non-Noble Electrodes

DRAM MIM Capacitor Using Non-Noble Electrodes

Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...

Nonvolatile Resistive Memory Element With an Integrated Oxygen Isol...

Diffusion Barrier Layer for Resistive Random Access Memory Cells

Method of Forming an Asymmetric MIMCAP or a Schottky Device as a Se...

MULTIFUNCTIONAL ELECTRODE

Atomic Layer Deposition of Metal Oxides for Memory Applications

Nonvolatile Resistive Memory Element With A Metal Nitride Containin...

CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICE

Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...

High Productivity Combinatorial Workflow to Screen and Design Chalc...

Current Selector for Non-Volatile Memory in a Cross Bar Array Based...

MULTIFUNCTIONAL ELECTRODE

Resistive-Switching Memory Elements Having Improved Switching Chara...