Ina Ostermay

Person

Coswig, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Shallow pn junction formed by in situ doping during selective growt...
- Patent number 8,906,811
- Issue date Dec 9, 2014
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded sigma-shaped semiconductor alloys formed in transistors by...
- Patent number 8,728,896
- Issue date May 20, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a PMOS device with in situ doped epitaxial sourc...
- Patent number 8,466,018
- Issue date Jun 18, 2013
- GLOBALFOUNDRIES Inc.
- Ralf Illgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow PN junction formed by in situ doping during selective growt...
- Patent number 8,053,273
- Issue date Nov 8, 2011
- Advanced Micro Devices Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABR...
- Publication number 20130069123
- Publication date Mar 21, 2013
- GLOBALFOUNDRIES INC.
- Ralf Illgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL TRANSISTOR COMPRISING A HIGH-K METAL GATE ELECTRODE STRUC...
- Publication number 20130032877
- Publication date Feb 7, 2013
- GLOBALFOUNDRIES INC.
- Ina Ostermay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a PMOS Device with In Situ Doped Epitaxial Sourc...
- Publication number 20130029463
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Ralf Illgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING CMOS INTEGRATED CIRCUITS HAVING METAL SILIC...
- Publication number 20120231591
- Publication date Sep 13, 2012
- GLOBALFOUNDRIES INC.
- Stefan FLACHOWSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Defect Rates in PFET Transistors Comprising a Silicon/...
- Publication number 20120161249
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20120153350
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Stephan KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS BY...
- Publication number 20120153402
- Publication date Jun 21, 2012
- GLOBAL FOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...
- Publication number 20120032278
- Publication date Feb 9, 2012
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...
- Publication number 20100025779
- Publication date Feb 4, 2010
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS

Ina Ostermay

Person

Patents Grantslast 30 patents

Shallow pn junction formed by in situ doping during selective growt...

Embedded sigma-shaped semiconductor alloys formed in transistors by...

Methods of forming a PMOS device with in situ doped epitaxial sourc...

Shallow PN junction formed by in situ doping during selective growt...

Patents Applicationslast 30 patents

CMOS SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABR...

N-CHANNEL TRANSISTOR COMPRISING A HIGH-K METAL GATE ELECTRODE STRUC...

Methods of Forming a PMOS Device with In Situ Doped Epitaxial Sourc...

METHODS FOR FABRICATING CMOS INTEGRATED CIRCUITS HAVING METAL SILIC...

Reduction of Defect Rates in PFET Transistors Comprising a Silicon/...

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS BY...

SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...

SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...