Inchan HWANG

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit devices including a power distribution network a...
- Patent number 12,200,920
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective double diffusion break structures for multi-stack semicon...
- Patent number 12,144,163
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with backside power distribution network and method...
- Patent number 12,131,996
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crossing multi-stack nanosheet structure and method of manufacturin...
- Patent number 12,087,815
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device having mirror-symmetric pattern
- Patent number 12,057,448
- Issue date Aug 6, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device having vertical misalignment
- Patent number 12,040,327
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM memory cell for stacked transistors with different channel width
- Patent number 11,968,818
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,935,922
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an array of multi-stack nanosheet structures havi...
- Patent number 11,742,345
- Issue date Aug 29, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device having mirror-symmetric pattern
- Patent number 11,735,585
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crossing multi-stack nanosheet structure and method of manufacturin...
- Patent number 11,670,677
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including stacked transistors
- Patent number 11,664,433
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory of 3D stacked devices
- Patent number 11,538,814
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,502,167
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of multi-stack nanosheet structures
- Patent number 11,437,369
- Issue date Sep 6, 2022
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20250031360
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING VERTICAL MISALIGNMENT
- Publication number 20240363634
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN
- Publication number 20230369317
- Publication date Nov 16, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A POWER DISTRIBUTION NETWORK A...
- Publication number 20230354570
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...
- Publication number 20230352408
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- MYUNGHOON JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACER...
- Publication number 20230343823
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Jaejik BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIMITED LATERAL GROWTH OF S/D EPI BY OUTER DIELECTRIC LAYER IN 3-DI...
- Publication number 20230335549
- Publication date Oct 19, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH BACKSIDE POWER DISTRIBUTION NETWORK AND METHOD...
- Publication number 20230307364
- Publication date Sep 28, 2023
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...
- Publication number 20230275021
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...
- Publication number 20230231015
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Hwichan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR STRUCTURES OF INTEGRATED CIRCUIT DEVICES INCLUDING STACKED...
- Publication number 20230135219
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS O...
- Publication number 20230095421
- Publication date Mar 30, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...
- Publication number 20230086084
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING VERTICAL MISALIGNMENT
- Publication number 20230046885
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF MULTI-STACK NANOSHEET STRUCTURES
- Publication number 20220359500
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS
- Publication number 20220344481
- Publication date Oct 27, 2022
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20220336473
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM MEMORY CELL FOR STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTH
- Publication number 20220302134
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY OF 3D STACKED DEVICES
- Publication number 20220246623
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN
- Publication number 20220231013
- Publication date Jul 21, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...
- Publication number 20220109047
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Hwichan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF MULTI-STACK NANOSHEET STRUCTURES AND METHOD OF MANUFACTURI...
- Publication number 20220108981
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE
- Publication number 20220109046
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS

Inchan HWANG

Person

Patents Grantslast 30 patents

Integrated circuit devices including a power distribution network a...

Selective double diffusion break structures for multi-stack semicon...

Stacked device with backside power distribution network and method...

Crossing multi-stack nanosheet structure and method of manufacturin...

Stacked semiconductor device having mirror-symmetric pattern

Three-dimensional semiconductor device having vertical misalignment

SRAM memory cell for stacked transistors with different channel width

Semiconductor device having stepped multi-stack transistor structure

Method of forming an array of multi-stack nanosheet structures havi...

Stacked semiconductor device having mirror-symmetric pattern

Crossing multi-stack nanosheet structure and method of manufacturin...

Integrated circuit devices including stacked transistors

Static random access memory of 3D stacked devices

Semiconductor device having stepped multi-stack transistor structure

Array of multi-stack nanosheet structures

Patents Applicationslast 30 patents

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING VERTICAL MISALIGNMENT

STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN

INTEGRATED CIRCUIT DEVICES INCLUDING A POWER DISTRIBUTION NETWORK A...

INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACER...

LIMITED LATERAL GROWTH OF S/D EPI BY OUTER DIELECTRIC LAYER IN 3-DI...

STACKED DEVICE WITH BACKSIDE POWER DISTRIBUTION NETWORK AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...

CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...

RESISTOR STRUCTURES OF INTEGRATED CIRCUIT DEVICES INCLUDING STACKED...

INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS O...

STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING VERTICAL MISALIGNMENT

ARRAY OF MULTI-STACK NANOSHEET STRUCTURES

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

SRAM MEMORY CELL FOR STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTH

STATIC RANDOM ACCESS MEMORY OF 3D STACKED DEVICES

STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN

CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...

ARRAY OF MULTI-STACK NANOSHEET STRUCTURES AND METHOD OF MANUFACTURI...

SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE