Ing-Yann Albert Wang

Person

Moraga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High strip rate downstream chamber
- Patent number 8,425,682
- Issue date Apr 23, 2013
- Lam Research Corporation
- Ing-Yann Wang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High strip rate downstream chamber
- Patent number 8,298,336
- Issue date Oct 30, 2012
- Lam Research Corporation
- Ing-Yann Wang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for implementing highly efficient plasma traps
- Patent number 8,048,329
- Issue date Nov 1, 2011
- Lam Research Corporation
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Variable volume plasma processing chamber and associated methods
- Patent number 7,824,519
- Issue date Nov 2, 2010
- Lam Research Corporation
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly efficient gas distribution arrangement for plasma tube of a...
- Patent number 7,679,024
- Issue date Mar 16, 2010
- Lam Research Corporation
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and arrangement for implementing highly efficient plasma traps
- Patent number 7,562,638
- Issue date Jul 21, 2009
- Lam Research Corporation
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Corrugated plasma trap arrangement for creating a highly efficient...
- Patent number 7,554,053
- Issue date Jun 30, 2009
- Lam Research Corporation
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
High chamber temperature process and chamber design for photo-resis...
- Patent number 7,476,291
- Issue date Jan 13, 2009
- Lam Research Corporation
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH STRIP RATE DOWNSTREAM CHAMBER
- Publication number 20140261803
- Publication date Sep 18, 2014
- Ing-Yann Wang
- F17 - STORING OF DISTRIBUTING GASES OR LIQUIDS
Information Patent Application
HIGH STRIP RATE DOWNSTREAM CHAMBER
- Publication number 20130025693
- Publication date Jan 31, 2013
- LAM RESEARCH CORPORATION
- Ing-Yann Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Volume Plasma Processing Chamber and Associated Methods
- Publication number 20110023779
- Publication date Feb 3, 2011
- LAM RESEARCH CORPORATION
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR IMPLEMENTING HIGHLY EFFICIENT PLASMA TRAPS
- Publication number 20090278054
- Publication date Nov 12, 2009
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Variable Volume Plasma Processing Chamber and Associated Methods
- Publication number 20080286489
- Publication date Nov 20, 2008
- LAM RESEARCH CORPORATION
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High chamber temperature process and chamber design for photo-resis...
- Publication number 20080078744
- Publication date Apr 3, 2008
- LAM RESEARCH CORPORATION
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and arrangement for implementing highly efficient plasma traps
- Publication number 20070144441
- Publication date Jun 28, 2007
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Methods and arrangement for creating a highly efficient downstream...
- Publication number 20070145020
- Publication date Jun 28, 2007
- Mohammad Kamarehi
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Highly Efficient Gas Distribution Arrangement For Plasma Tube Of A...
- Publication number 20070145021
- Publication date Jun 28, 2007
- Ing-Yann Albert Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High strip rate downstream chamber
- Publication number 20060219361
- Publication date Oct 5, 2006
- Lam Research Corporation
- Ing-Yann Wang
- H01 - BASIC ELECTRIC ELEMENTS

Ing-Yann Albert Wang

Person

Patents Grantslast 30 patents

High strip rate downstream chamber

High strip rate downstream chamber

Methods for implementing highly efficient plasma traps

Variable volume plasma processing chamber and associated methods

Highly efficient gas distribution arrangement for plasma tube of a...

Methods and arrangement for implementing highly efficient plasma traps

Corrugated plasma trap arrangement for creating a highly efficient...

High chamber temperature process and chamber design for photo-resis...

Patents Applicationslast 30 patents

HIGH STRIP RATE DOWNSTREAM CHAMBER

HIGH STRIP RATE DOWNSTREAM CHAMBER

Variable Volume Plasma Processing Chamber and Associated Methods

METHODS FOR IMPLEMENTING HIGHLY EFFICIENT PLASMA TRAPS

Variable Volume Plasma Processing Chamber and Associated Methods

High chamber temperature process and chamber design for photo-resis...

Methods and arrangement for implementing highly efficient plasma traps

Methods and arrangement for creating a highly efficient downstream...

Highly Efficient Gas Distribution Arrangement For Plasma Tube Of A...

High strip rate downstream chamber