Ingo Dirnstorfer

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having elevated source regions and reces...
- Patent number 11,888,061
- Issue date Jan 30, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a power semiconductor device
- Patent number 11,257,946
- Issue date Feb 22, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch with improved controllability
- Patent number 11,011,629
- Issue date May 18, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE, MEASUREMENT SYSTEM AND METHOD FOR DETER...
- Publication number 20240105837
- Publication date Mar 28, 2024
- INFINEON TECHNOLOGIES AG
- Ingo Dirnstorfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20220140135
- Publication date May 5, 2022
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mesa Contact for MOS Controlled Power Semiconductor Device
- Publication number 20220069079
- Publication date Mar 3, 2022
- Ute Queitsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Forming a Power Semiconduc...
- Publication number 20200235235
- Publication date Jul 23, 2020
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch with Improved Controllability
- Publication number 20200168727
- Publication date May 28, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Reliably Verifiable p-contact and M...
- Publication number 20200066579
- Publication date Feb 27, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

Ingo Dirnstorfer

Person

Patents Grantslast 30 patents

Power semiconductor device with p-contact and doped insulation bloc...

Power semiconductor device having elevated source regions and reces...

Power semiconductor switch having a cross-trench structure

Power semiconductor switch having a cross-trench structure

Method of forming a power semiconductor device

Power semiconductor device having a cross-trench arrangement

Power semiconductor device with reliably verifiable p-contact and m...

Power semiconductor switch with improved controllability

Power semiconductor device with dV/dt controllability and cross-tre...

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE, MEASUREMENT SYSTEM AND METHOD FOR DETER...

Power Semiconductor Device

Mesa Contact for MOS Controlled Power Semiconductor Device

Power Semiconductor Switch Having a Cross-Trench Structure

Power Semiconductor Device with p-contact

Power Semiconductor Device and Method of Forming a Power Semiconduc...

Power Semiconductor Switch with Improved Controllability

Power Semiconductor Device with Reliably Verifiable p-contact and M...

Power Semiconductor Device Having a Cross-Trench Arrangement

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...