Inkuk Kang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 12,029,041
- Issue date Jul 2, 2024
- Infineon Technologies LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 11,690,227
- Issue date Jun 27, 2023
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded non-volatile memory device and fabrication method of the same
- Patent number 10,872,898
- Issue date Dec 22, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 10,497,710
- Issue date Dec 3, 2019
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 10,242,996
- Issue date Mar 26, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,853,039
- Issue date Dec 26, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,818,755
- Issue date Nov 14, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating memory cells having fin structures with sem...
- Patent number 8,987,092
- Issue date Mar 24, 2015
- Spansion LLC
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sonos memory cells having non-uniform tunnel oxide and methods for...
- Patent number 8,742,496
- Issue date Jun 3, 2014
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device employing polysilicon scaling
- Patent number 8,637,918
- Issue date Jan 28, 2014
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned SI rich nitride charge trap layer isolation for charge...
- Patent number 8,551,858
- Issue date Oct 8, 2013
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory cells having non-uniform tunnel oxide and methods for...
- Patent number 8,487,373
- Issue date Jul 16, 2013
- Spanion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device employing polysilicon scaling
- Patent number 8,076,199
- Issue date Dec 13, 2011
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cu annealing for improved data retention in flash memory devices
- Patent number 8,026,169
- Issue date Sep 27, 2011
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal/oxide etch after polish to prevent bridging between adjacent...
- Patent number 7,288,487
- Issue date Oct 30, 2007
- Spansion LLC
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bond pad structure for copper metallization having increased reliab...
- Patent number 7,242,102
- Issue date Jul 10, 2007
- Spansion LLC
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for achieving increased control over interconnect line thick...
- Patent number 7,122,465
- Issue date Oct 17, 2006
- Spansion LLC
- Boon-Yong Ang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of simultaneous fabrication of core and pe...
- Patent number 7,060,564
- Issue date Jun 13, 2006
- Advanced Micro Devices, Inc.
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for increasing oxygen content at bottom oxi...
- Patent number 7,033,957
- Issue date Apr 25, 2006
- FASL, LLC
- Hidehiko Shiraiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for protecting memory cells from UV radiation...
- Patent number 6,974,989
- Issue date Dec 13, 2005
- Spansion LLC
- Cinti X. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for reducing oxygen vacancy content in bott...
- Patent number 6,969,886
- Issue date Nov 29, 2005
- Fasl, LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed channel
- Patent number 6,963,108
- Issue date Nov 8, 2005
- Advanced Micro Devices, Inc.
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for reducing oxygen vacancy content in bott...
- Patent number 6,803,275
- Issue date Oct 12, 2004
- Fasl, LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20210296343
- Publication date Sep 23, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20210134811
- Publication date May 6, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190304990
- Publication date Oct 3, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190027487
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20190027484
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Gate Flash Cell formed on Recessed Substrate
- Publication number 20180166458
- Publication date Jun 14, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Improve Charge Trap Flash Memory Top Oxide Quality
- Publication number 20150255480
- Publication date Sep 10, 2015
- SPANSION LLC
- Tung-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...
- Publication number 20140001537
- Publication date Jan 2, 2014
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...
- Publication number 20130277732
- Publication date Oct 24, 2013
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE EMPLOYING POLYSILICON SCALING
- Publication number 20120056260
- Publication date Mar 8, 2012
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...
- Publication number 20100276746
- Publication date Nov 4, 2010
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE EMPLOYING POLYSILICON SCALING
- Publication number 20100207191
- Publication date Aug 19, 2010
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...
- Publication number 20100133646
- Publication date Jun 3, 2010
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...
- Publication number 20090269916
- Publication date Oct 29, 2009
- Inkuk KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cu annealing for improved data retention in flash memory devices
- Publication number 20080108193
- Publication date May 8, 2008
- Spansion LLC
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bond pad structure for copper metallization having increased reliab...
- Publication number 20060006552
- Publication date Jan 12, 2006
- FASL, LLC.
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of forming high-voltage transistor with thin gate poly

Method of forming high-voltage transistor with thin gate poly

Embedded non-volatile memory device and fabrication method of the same

Split-gate flash cell formed on recessed substrate

Method of forming high-voltage transistor with thin gate poly

Split-gate flash cell formed on recessed substrate

Split-gate flash cell formed on recessed substrate

Methods for fabricating memory cells having fin structures with sem...

Sonos memory cells having non-uniform tunnel oxide and methods for...

Method and device employing polysilicon scaling

Self-aligned SI rich nitride charge trap layer isolation for charge...

SONOS memory cells having non-uniform tunnel oxide and methods for...

Method and device employing polysilicon scaling

Cu annealing for improved data retention in flash memory devices

Metal/oxide etch after polish to prevent bridging between adjacent...

Bond pad structure for copper metallization having increased reliab...

Method for achieving increased control over interconnect line thick...

Memory device and method of simultaneous fabrication of core and pe...

ONO fabrication process for increasing oxygen content at bottom oxi...

Structure and method for protecting memory cells from UV radiation...

ONO fabrication process for reducing oxygen vacancy content in bott...

Recessed channel

ONO fabrication process for reducing oxygen vacancy content in bott...

Patents Applicationslast 30 patents

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Split-Gate Flash Cell formed on Recessed Substrate

Method to Improve Charge Trap Flash Memory Top Oxide Quality

SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...

SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...

METHOD AND DEVICE EMPLOYING POLYSILICON SCALING

SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...

METHOD AND DEVICE EMPLOYING POLYSILICON SCALING

SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...

Cu annealing for improved data retention in flash memory devices

Bond pad structure for copper metallization having increased reliab...