Irene Lennox McStay

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Sacrificial collar method for improved deep trench processing
- Patent number 6,905,944
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Michael Patrick Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of area enhancement in capacitor plates
- Patent number 6,709,947
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Porshia S. Wrschka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of separation between transfer gate and storage node in ver...
- Patent number 6,706,634
- Issue date Mar 16, 2004
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity deep trench fill for DRAM and EDRAM applications
- Patent number 6,620,724
- Issue date Sep 16, 2003
- Infineon Technologies AG
- Uwe Schroeder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for surface roughness enhancement in semiconductor capacitor...
- Patent number 6,613,642
- Issue date Sep 2, 2003
- International Business Machines Corporation
- Stephen Rahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RTCVD process and reactor for improved conformality and step-coverage
- Patent number 6,576,565
- Issue date Jun 10, 2003
- Infineon Technologies, AG
- Ashima Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Rough oxide hard mask for DT surface area enhancement for DT DRAM
- Patent number 6,559,002
- Issue date May 6, 2003
- Infineon Technologies North America Corp.
- Stephan Kudelka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for capacitance enhancement in a DRAM trench
- Patent number 6,555,430
- Issue date Apr 29, 2003
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for sacrificial collar with polysilicon void
- Patent number 6,544,855
- Issue date Apr 8, 2003
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of deep trench capacitor and resistor
- Patent number 6,528,383
- Issue date Mar 4, 2003
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative ion implant mask formation for self-aligned, sublithograph...
- Patent number 6,498,061
- Issue date Dec 24, 2002
- International Business Machines Corporation
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for sacrificial collar with poly mask
- Patent number 6,458,647
- Issue date Oct 1, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating diffusion barrier for low-resistivity gate conductors
- Patent number 6,444,516
- Issue date Sep 3, 2002
- International Business Machines Corporation
- Lawrence Alfred Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-limiting polysilicon LOCOS for DRAM cell
- Patent number 6,309,924
- Issue date Oct 30, 2001
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nitride and polysilicon interface with titanium layer
- Publication number 20060001162
- Publication date Jan 5, 2006
- Ronald J. Schutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL COLLAR METHOD FOR IMPROVED DEEP TRENCH PROCESSING
- Publication number 20040224478
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Michael Patrick Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SURFACE ROUGHNESS ENHANCEMENT IN SEMICONDUCTOR CAPACITOR...
- Publication number 20030114005
- Publication date Jun 19, 2003
- International Business Machines Corporation
- Stephen Rahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FLOW FOR SACRIFICIAL COLLAR WITH POLYSILICON VOID
- Publication number 20030077872
- Publication date Apr 24, 2003
- Infineon Technologies North America Corp.
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for surface area enhancement of capacitors by film growth an...
- Publication number 20020106857
- Publication date Aug 8, 2002
- International Business Machines Corporation
- Rajarao Jammy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Negative Ion implant mask formation for self-aligned, sublithograph...
- Publication number 20020068399
- Publication date Jun 6, 2002
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS

Irene Lennox McStay

Person

Patents Grantslast 30 patents

Sacrificial collar method for improved deep trench processing

Method of area enhancement in capacitor plates

Control of separation between transfer gate and storage node in ver...

Low resistivity deep trench fill for DRAM and EDRAM applications

Method for surface roughness enhancement in semiconductor capacitor...

RTCVD process and reactor for improved conformality and step-coverage

Rough oxide hard mask for DT surface area enhancement for DT DRAM

Process flow for capacitance enhancement in a DRAM trench

Process flow for sacrificial collar with polysilicon void

Simultaneous formation of deep trench capacitor and resistor

Negative ion implant mask formation for self-aligned, sublithograph...

Process flow for sacrificial collar with poly mask

Semi-insulating diffusion barrier for low-resistivity gate conductors

Method of forming self-limiting polysilicon LOCOS for DRAM cell

Patents Applicationslast 30 patents

Nitride and polysilicon interface with titanium layer

SACRIFICIAL COLLAR METHOD FOR IMPROVED DEEP TRENCH PROCESSING

METHOD FOR SURFACE ROUGHNESS ENHANCEMENT IN SEMICONDUCTOR CAPACITOR...

PROCESS FLOW FOR SACRIFICIAL COLLAR WITH POLYSILICON VOID

Method for surface area enhancement of capacitors by film growth an...

Negative Ion implant mask formation for self-aligned, sublithograph...