Isaho Kamata

Person

Yokosuka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer evaluation apparatus and semiconductor wafer ma...
- Patent number 11,906,569
- Issue date Feb 20, 2024
- Showa Denko K.K.
- Koichi Murata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC epitaxial wafer and method for producing same
- Patent number 11,107,892
- Issue date Aug 31, 2021
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus
- Patent number 10,896,831
- Issue date Jan 19, 2021
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus, susceptor, and film forming method
- Patent number 10,584,417
- Issue date Mar 10, 2020
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC epitaxial wafer by simultaneously util...
- Patent number 10,262,863
- Issue date Apr 16, 2019
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 10,181,517
- Issue date Jan 15, 2019
- Denso Corporation
- Takeshi Okamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor film-forming apparatus and film-formi...
- Patent number 9,879,359
- Issue date Jan 30, 2018
- Denso Corporation
- Hiroaki Fujibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming manufacturing apparatus and method
- Patent number 9,873,941
- Issue date Jan 23, 2018
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,598,792
- Issue date Mar 21, 2017
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,570,337
- Issue date Feb 14, 2017
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,518,322
- Issue date Dec 13, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,273,412
- Issue date Mar 1, 2016
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus and method for semiconductor device and cle...
- Patent number 8,815,711
- Issue date Aug 26, 2014
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,716,718
- Issue date May 6, 2014
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for recovering an on-state forward voltage and, shrinking st...
- Patent number 8,455,269
- Issue date Jun 4, 2013
- Central Research Institute of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon carbide semiconductor device
- Patent number 8,367,510
- Issue date Feb 5, 2013
- Central Research Institute Of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,293,623
- Issue date Oct 23, 2012
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide bipolar semiconductor device
- Patent number 8,154,026
- Issue date Apr 10, 2012
- Central Research Institute Of Electric Power Industry
- Ryosuke Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,257
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,737
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,738
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,768,017
- Issue date Aug 3, 2010
- The Kansai Electric Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing SiC crystal and SiC crystal
- Patent number 7,081,420
- Issue date Jul 25, 2006
- Central Research Institute Of Electric Power Industry
- Isaho Kamata
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240191392
- Publication date Jun 13, 2024
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240110309
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...
- Publication number 20240110308
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...
- Publication number 20230374699
- Publication date Nov 23, 2023
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20230279580
- Publication date Sep 7, 2023
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...
- Publication number 20230193510
- Publication date Jun 22, 2023
- MIRISE Technologies Corporation
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER EVALUATION APPARATUS AND SEMICONDUCTOR WAFER MA...
- Publication number 20220146564
- Publication date May 12, 2022
- SHOWA DENKO K.K.
- Koichi Murata
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20220112623
- Publication date Apr 14, 2022
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...
- Publication number 20210108334
- Publication date Apr 15, 2021
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20210102311
- Publication date Apr 8, 2021
- DENSO CORPORATION
- Yuichiro TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20200083330
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARTUS
- Publication number 20180374721
- Publication date Dec 27, 2018
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...
- Publication number 20180219069
- Publication date Aug 2, 2018
- Denso Corporation
- Takeshi OKAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...
- Publication number 20170345658
- Publication date Nov 30, 2017
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...
- Publication number 20160138190
- Publication date May 19, 2016
- Denso Corporation
- Hiroaki FUJIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD
- Publication number 20160024652
- Publication date Jan 28, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...
- Publication number 20150376813
- Publication date Dec 31, 2015
- CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
- Hidekazu TSUCHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING MANUFACTURING APPARATUS AND METHOD
- Publication number 20150329967
- Publication date Nov 19, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE
- Publication number 20150299898
- Publication date Oct 22, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20150090693
- Publication date Apr 2, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20140287539
- Publication date Sep 25, 2014
- Hideki ITO
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FIL...
- Publication number 20130247816
- Publication date Sep 26, 2013
- Denso Corporation
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20130152853
- Publication date Jun 20, 2013
- DENSO CORPORATION
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...
- Publication number 20130009170
- Publication date Jan 10, 2013
- SHOWA DENKO K.K.
- Kenji MOMOSE
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20120325138
- Publication date Dec 27, 2012
- NuFlare Techology, Inc.
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...
- Publication number 20110006309
- Publication date Jan 13, 2011
- Showa Denko K.K.
- Kenji Momose
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100258816
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Joji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100258817
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100261333
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Isaho Kamata

Person

Patents Grantslast 30 patents

Methods for manufacturing silicon carbide single crystal ingot and...

Semiconductor wafer evaluation apparatus and semiconductor wafer ma...

Silicon carbide single crystal

SiC epitaxial wafer and method for producing same

Film forming apparatus

Film forming apparatus, susceptor, and film forming method

Method for manufacturing SiC epitaxial wafer by simultaneously util...

Silicon carbide single crystal, silicon carbide single crystal wafe...

Silicon carbide semiconductor film-forming apparatus and film-formi...

Film-forming manufacturing apparatus and method

Film-forming apparatus and film-forming method

Film formation apparatus and film formation method

Film formation apparatus and film formation method

Film-forming apparatus and film-forming method

Manufacturing apparatus and method for semiconductor device and cle...

Epitaxial SiC single crystal substrate and method of manufacture of...

Method for recovering an on-state forward voltage and, shrinking st...

Process for producing silicon carbide semiconductor device

Epitaxial SiC single crystal substrate and method of manufacture of...

Silicon carbide bipolar semiconductor device

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Method for preparing SiC crystal and SiC crystal

Patents Applicationslast 30 patents

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...

METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...

SEMICONDUCTOR WAFER EVALUATION APPARATUS AND SEMICONDUCTOR WAFER MA...

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...

SILICON CARBIDE SINGLE CRYSTAL

SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

FILM FORMING APPARTUS

SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...

SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...

FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD

METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...

FILM-FORMING MANUFACTURING APPARATUS AND METHOD

SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FIL...

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor