Iwami Masayuki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,960,572
- Issue date May 1, 2018
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device, production method thereof, diode, and...
- Patent number 9,911,842
- Issue date Mar 6, 2018
- Furukawa Electric Co., Ltd.
- Kazuyuki Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 9,269,577
- Issue date Feb 23, 2016
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and semiconductor device, and manufacturing...
- Patent number 9,099,383
- Issue date Aug 4, 2015
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having semiconductor operating layer formed...
- Patent number 9,048,302
- Issue date Jun 2, 2015
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride compound semiconductor device and manufacturing method thereof
- Patent number 8,884,393
- Issue date Nov 11, 2014
- Furukawa Electric Co., Ltd.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and manufacturing method for the same
- Patent number 8,860,038
- Issue date Oct 14, 2014
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,569,800
- Issue date Oct 29, 2013
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based compound semiconductor and nitride-based compound sem...
- Patent number 8,552,531
- Issue date Oct 8, 2013
- Advanced Power Device Research Association
- Masayuki Iwami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Field effect transistor, method of manufacturing field effect trans...
- Patent number 8,450,782
- Issue date May 28, 2013
- Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor electronic device having reduced threading dislocatio...
- Patent number 8,338,859
- Issue date Dec 25, 2012
- Furukawa Electric Co., Ltd.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based field effect transistor
- Patent number 8,330,187
- Issue date Dec 11, 2012
- Furukawa Electric Co., Ltd.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based field effect transistor and method of manufacturing the same
- Patent number 8,330,167
- Issue date Dec 11, 2012
- Furukawa Electric Co., Ltd.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor device and method of manufacturing the same
- Patent number 8,304,809
- Issue date Nov 6, 2012
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,072,002
- Issue date Dec 6, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor electronic device
- Patent number 8,067,787
- Issue date Nov 29, 2011
- The Furukawa Electric Co., Ltd.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN based semiconductor element
- Patent number 7,812,371
- Issue date Oct 12, 2010
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type semiconductor device and manufacturing method of the...
- Patent number 7,679,104
- Issue date Mar 16, 2010
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 6,898,224
- Issue date May 24, 2005
- The Furukawa Electric Co., Ltd.
- Mikihiro Yokozeki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160351392
- Publication date Dec 1, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DEVICE
- Publication number 20160352075
- Publication date Dec 1, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF, DIODE, AND...
- Publication number 20160225889
- Publication date Aug 4, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Kazuyuki UMENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20140120703
- Publication date May 1, 2014
- FURUKAWA ELECTRIC CO., LTD.
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20140084298
- Publication date Mar 27, 2014
- Takuya KOKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
- Publication number 20140008661
- Publication date Jan 9, 2014
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140008615
- Publication date Jan 9, 2014
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Makoto UTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130328106
- Publication date Dec 12, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Takuya KOKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE, AND MANUFACTURING...
- Publication number 20130306979
- Publication date Nov 21, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130307023
- Publication date Nov 21, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Takuya KOKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130307024
- Publication date Nov 21, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Takuya KOKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20130069076
- Publication date Mar 21, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED FIELD EFFECT TRANSISTOR
- Publication number 20130062616
- Publication date Mar 14, 2013
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR AND NITRIDE-BASED COMPOUND SEM...
- Publication number 20120049182
- Publication date Mar 1, 2012
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Masayuki IWAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20110241017
- Publication date Oct 6, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANS...
- Publication number 20110241088
- Publication date Oct 6, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100244101
- Publication date Sep 30, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED FIELD EFFECT TRANSISTOR
- Publication number 20100244044
- Publication date Sep 30, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Jiang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE AND PROCESS OF MANUFACTURING THE SAME
- Publication number 20100213577
- Publication date Aug 26, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Sadahiro Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
GAN-BASED FIELD EFFECT TRANSISTOR
- Publication number 20100148184
- Publication date Jun 17, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100127275
- Publication date May 27, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100078678
- Publication date Apr 1, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN based semiconductor element
- Publication number 20090278172
- Publication date Nov 12, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE
- Publication number 20090200645
- Publication date Aug 13, 2009
- THE FURUKAWA ELECTRIC CO., LTD.
- Takuya Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transister and process for producing the same
- Publication number 20090194790
- Publication date Aug 6, 2009
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor device and method of manufacturing the same
- Publication number 20090140295
- Publication date Jun 4, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE...
- Publication number 20080142837
- Publication date Jun 19, 2008
- THE FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device
- Publication number 20030043872
- Publication date Mar 6, 2003
- Mikihiro Yokozeki
- B82 - NANO-TECHNOLOGY

Iwami Masayuki

Person

Patents Grantslast 30 patents

Semiconductor device

Nitride semiconductor device, production method thereof, diode, and...

Method for manufacturing nitride semiconductor device

Semiconductor substrate and semiconductor device, and manufacturing...

Field effect transistor having semiconductor operating layer formed...

Nitride compound semiconductor device and manufacturing method thereof

Nitride semiconductor device and manufacturing method for the same

Field effect transistor

Nitride-based compound semiconductor and nitride-based compound sem...

Field effect transistor, method of manufacturing field effect trans...

Semiconductor electronic device having reduced threading dislocatio...

GaN-based field effect transistor

GaN-based field effect transistor and method of manufacturing the same

GaN-based semiconductor device and method of manufacturing the same

Field effect transistor

Semiconductor electronic device

GaN based semiconductor element

Vertical type semiconductor device and manufacturing method of the...

Semiconductor laser device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR LASER DEVICE

NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF, DIODE, AND...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE, AND MANUFACTURING...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

GaN-BASED FIELD EFFECT TRANSISTOR

NITRIDE-BASED COMPOUND SEMICONDUCTOR AND NITRIDE-BASED COMPOUND SEM...

FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANS...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GaN-BASED FIELD EFFECT TRANSISTOR

SEMICONDUCTOR ELECTRONIC DEVICE AND PROCESS OF MANUFACTURING THE SAME

GAN-BASED FIELD EFFECT TRANSISTOR

GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

GaN based semiconductor element

SEMICONDUCTOR ELECTRONIC DEVICE

Field effect transister and process for producing the same

GaN-based semiconductor device and method of manufacturing the same

VERTICAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE...

Semiconductor laser device