Izumi Fusegawa

Person

Nishishirakawa-gun Fukushima, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing silicon single crystal
- Patent number 9,938,634
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and manufacturing method thereof
- Patent number 9,425,345
- Issue date Aug 23, 2016
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quartz glass crucible, method for producing the same, and method fo...
- Patent number 9,376,336
- Issue date Jun 28, 2016
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 9,337,013
- Issue date May 10, 2016
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal
- Patent number 8,147,611
- Issue date Apr 3, 2012
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for determining distance between reference member and melt s...
- Patent number 8,085,985
- Issue date Dec 27, 2011
- Shin-Etsu Handotai Co., Ltd.
- Masahiko Urano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal and a silicon single...
- Patent number 7,909,930
- Issue date Mar 22, 2011
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Soi wafer and a method for producing the same
- Patent number 7,407,866
- Issue date Aug 5, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a single crystal and silicon single crystal wafer
- Patent number 7,326,395
- Issue date Feb 5, 2008
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon single crystal wafer, an epitaxial wafer and a method for p...
- Patent number 7,294,196
- Issue date Nov 13, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite heater for producing single crystal, apparatus for produci...
- Patent number 7,258,744
- Issue date Aug 21, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing single crystal and single crystal
- Patent number 7,226,507
- Issue date Jun 5, 2007
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing P-doped silicon single crystal and P-doped N-ty...
- Patent number 7,214,268
- Issue date May 8, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon single crystal, silicon single crys...
- Patent number 7,179,330
- Issue date Feb 20, 2007
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SOI wafer and a method for producing an SOI wafer
- Patent number 7,129,123
- Issue date Oct 31, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer and method for producing silicon singl...
- Patent number 6,913,646
- Issue date Jul 5, 2005
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for manufacturing the same
- Patent number 6,893,499
- Issue date May 17, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing silicon semiconductor single cry...
- Patent number 6,764,548
- Issue date Jul 20, 2004
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for growing single crystal, method for producing single c...
- Patent number 6,632,280
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and method for producing silicon single crystal
- Patent number 6,632,411
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing silicon single crystal and silicon single crystal
- Patent number 6,592,662
- Issue date Jul 15, 2003
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial silicon wafer, method for producing the same and subtrate...
- Patent number 6,565,822
- Issue date May 20, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal and production apparatu...
- Patent number 6,423,285
- Issue date Jul 23, 2002
- Shin-Etsu Handotai Co., Ltd.
- Kirio Itoi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon wafer
- Patent number 6,387,466
- Issue date May 14, 2002
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal and the silicon singl...
- Patent number 6,153,009
- Issue date Nov 28, 2000
- Shin-Etsu Handotai Co., Ltd.
- Toshiharu Uesugi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor silicon single crystal wafer
- Patent number 6,117,231
- Issue date Sep 12, 2000
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for producing a single crystal
- Patent number 5,938,841
- Issue date Aug 17, 1999
- Shin-Etsu Handotai Co., Ltd.
- Kouji Kitagawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing silicon single crystal
- Patent number 5,871,583
- Issue date Feb 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for production of single crystal
- Patent number 5,851,283
- Issue date Dec 22, 1998
- Shin-Etsu Handotai Co. Ltd.
- Ryouji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat treatment of Si single crystal
- Patent number 5,834,322
- Issue date Nov 10, 1998
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20160068992
- Publication date Mar 10, 2016
- SHINE-TSU HANDOTAI CO., LTD.
- Masahiro SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20140374861
- Publication date Dec 25, 2014
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20140103492
- Publication date Apr 17, 2014
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FO...
- Publication number 20130174777
- Publication date Jul 11, 2013
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- C30 - CRYSTAL GROWTH
Information Patent Application
Quartz Glass Crucible for Pulling Silicon Single Crystal and Method...
- Publication number 20100139549
- Publication date Jun 10, 2010
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Single Crystal
- Publication number 20100126409
- Publication date May 27, 2010
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DETERMINING DISTANCE BETWEEN REFERENCE MEMBER AND MELT S...
- Publication number 20090232359
- Publication date Sep 17, 2009
- Shin-Etsu Handotai Co., Ltd.
- Masahiko Urano
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Silicon Single Crystal and a Silicon Single...
- Publication number 20070266930
- Publication date Nov 22, 2007
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...
- Publication number 20070101926
- Publication date May 10, 2007
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal and silicon crystal wafer
- Publication number 20060236919
- Publication date Oct 26, 2006
- SHIN-ETSU HANDOTAI CO., LTD.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing single crystal and single crystal
- Publication number 20060174819
- Publication date Aug 10, 2006
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and production method therefor
- Publication number 20060113594
- Publication date Jun 1, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing p doped silicon single crystal and p doped n...
- Publication number 20060065184
- Publication date Mar 30, 2006
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and epitaxial wafer, and method for pr...
- Publication number 20050252441
- Publication date Nov 17, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Graphite heater for producing single crystal, single crystal produc...
- Publication number 20050205004
- Publication date Sep 22, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal and, silicon single cry...
- Publication number 20050160966
- Publication date Jul 28, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and method for manufacturing soi wafer
- Publication number 20050064632
- Publication date Mar 24, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for producing silicon singl...
- Publication number 20030116082
- Publication date Jun 26, 2003
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for manufacturing the same
- Publication number 20030106484
- Publication date Jun 12, 2003
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for producing silicon semiconductor single cry...
- Publication number 20030089300
- Publication date May 15, 2003
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatas For Growing Jingle Crystal, Method For Producing Jingle C...
- Publication number 20030070605
- Publication date Apr 17, 2003
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and method for producing silicon single crystal
- Publication number 20020157598
- Publication date Oct 31, 2002
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing silicon single crystal and silicon single crystal
- Publication number 20020157600
- Publication date Oct 31, 2002
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH

Izumi Fusegawa

Person

Patents Grantslast 30 patents

Method of producing silicon single crystal

Epitaxial wafer and manufacturing method thereof

Quartz glass crucible, method for producing the same, and method fo...

Silicon wafer and method for producing the same

Method of manufacturing single crystal

Method for determining distance between reference member and melt s...

Method for producing a silicon single crystal and a silicon single...

Soi wafer and a method for producing the same

Method for producing a single crystal and silicon single crystal wafer

Silicon single crystal wafer, an epitaxial wafer and a method for p...

Graphite heater for producing single crystal, apparatus for produci...

Method for producing single crystal and single crystal

Method of producing P-doped silicon single crystal and P-doped N-ty...

Method of manufacturing silicon single crystal, silicon single crys...

SOI wafer and a method for producing an SOI wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Apparatus and method for producing silicon semiconductor single cry...

Apparatus for growing single crystal, method for producing single c...

Silicon wafer and method for producing silicon single crystal

Method for preparing silicon single crystal and silicon single crystal

Epitaxial silicon wafer, method for producing the same and subtrate...

Method for producing silicon single crystal and production apparatu...

Single-crystal silicon wafer

Method for producing a silicon single crystal and the silicon singl...

Method of manufacturing semiconductor silicon single crystal wafer

Device for producing a single crystal

Apparatus for producing silicon single crystal

Method and apparatus for production of single crystal

Heat treatment of Si single crystal

Patents Applicationslast 30 patents

METHOD OF PRODUCING SILICON SINGLE CRYSTAL

EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FO...

Quartz Glass Crucible for Pulling Silicon Single Crystal and Method...

Method of Manufacturing Single Crystal

METHOD FOR DETERMINING DISTANCE BETWEEN REFERENCE MEMBER AND MELT S...

Method for Producing a Silicon Single Crystal and a Silicon Single...

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...

Process for producing single crystal and silicon crystal wafer

Method for producing single crystal and single crystal

Soi wafer and production method therefor

Process for producing p doped silicon single crystal and p doped n...

Silicon single crystal wafer and epitaxial wafer, and method for pr...

Graphite heater for producing single crystal, single crystal produc...

Method for producing silicon single crystal and, silicon single cry...

Soi wafer and method for manufacturing soi wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Apparatus and method for producing silicon semiconductor single cry...

Apparatas For Growing Jingle Crystal, Method For Producing Jingle C...

Silicon wafer and method for producing silicon single crystal

Method for preparing silicon single crystal and silicon single crystal