J. Eric Ruetz

Person

  • San Bruno, CA, US

Patents Grantslast 30 patents

  • Information Patent Grant

    Programmable output drive circuit

    • Patent number 5,319,258
    • Issue date Jun 7, 1994
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY
  • Information Patent Grant

    Low-power crystal circuit

    • Patent number 5,254,961
    • Issue date Oct 19, 1993
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY
  • Information Patent Grant

    Gate multiplexed low noise charge pump

    • Patent number 5,164,889
    • Issue date Nov 17, 1992
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY
  • Information Patent Grant

    Bias start-up circuit

    • Patent number 5,155,384
    • Issue date Oct 13, 1992
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • G05 - CONTROLLING REGULATING
  • Information Patent Grant

    Low-power crystal oscillator

    • Patent number 5,155,453
    • Issue date Oct 13, 1992
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY
  • Information Patent Grant

    Programmable output drive circuit

    • Patent number 5,153,450
    • Issue date Oct 6, 1992
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY
  • Information Patent Grant

    High frequency VCO circuit

    • Patent number 5,153,534
    • Issue date Oct 6, 1992
    • Samsung Semiconductor, Inc.
    • J. Eric Ruetz
    • H03 - BASIC ELECTRONIC CIRCUITRY