J. Y. Wu

Person

Dou-Lio, TW

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with doped isolation insulating layer
- Patent number 10,192,985
- Issue date Jan 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with doped isolation insulating layer
- Patent number 10,164,095
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature compensating circuit and method
- Patent number 7,777,555
- Issue date Aug 17, 2010
- Holtek Semiconductor Inc.
- Chun-Yao Liao
- G05 - CONTROLLING REGULATING
Information Patent Grant
Intermetal dielectric layer formation with low dielectric constant...
- Patent number 6,100,205
- Issue date Aug 8, 2000
- United Microelectronics Corp.
- Chih-Chien Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-step high density plasma chemical vapor deposition process
- Patent number 5,968,610
- Issue date Oct 19, 1999
- United Microelectronics Corp.
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress released VLSI structure by the formation of porous intermeta...
- Patent number 5,517,062
- Issue date May 14, 1996
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making stress released VLSI structure by the formation of...
- Patent number 5,393,709
- Issue date Feb 28, 1995
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress release metallization for VLSI circuits
- Patent number 5,358,733
- Issue date Oct 25, 1994
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a convex charge coupled device
- Patent number 5,292,680
- Issue date Mar 8, 1994
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide recessed local oxidation of silicon
- Patent number 5,254,495
- Issue date Oct 19, 1993
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TEMPERATURE COMPENSATING CIRCUIT AND METHOD
- Publication number 20100066434
- Publication date Mar 18, 2010
- Holtek Semiconductor Inc.
- Chun-Yao Liao
- G05 - CONTROLLING REGULATING

Person

Patents Grantslast 30 patents

FinFET with doped isolation insulating layer

FinFET with doped isolation insulating layer

Temperature compensating circuit and method

Intermetal dielectric layer formation with low dielectric constant...

Multi-step high density plasma chemical vapor deposition process

Stress released VLSI structure by the formation of porous intermeta...

Method of making stress released VLSI structure by the formation of...

Stress release metallization for VLSI circuits

Method of forming a convex charge coupled device

Salicide recessed local oxidation of silicon

Patents Applicationslast 30 patents

TEMPERATURE COMPENSATING CIRCUIT AND METHOD