Jack T. Kavalieros

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming an oxide volume within a fin
- Patent number 12,224,202
- Issue date Feb 11, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate control for trench shaped thin film transistors
- Patent number 12,191,395
- Issue date Jan 7, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for thin film transistors
- Patent number 12,183,831
- Issue date Dec 31, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through plate interconnect for a vertical MIM capacitor
- Patent number 12,176,284
- Issue date Dec 24, 2024
- Intel Corporation
- Travis Lajoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including wrap around source and drain contacts
- Patent number 12,142,689
- Issue date Nov 12, 2024
- Intel Corporation
- Sean Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors having double gates
- Patent number 12,125,917
- Issue date Oct 22, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrays of double-sided dram cells including capacitors on the front...
- Patent number 12,120,865
- Issue date Oct 15, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked-substrate FPGA semiconductor devices
- Patent number 12,087,750
- Issue date Sep 10, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having differentiated interconnect li...
- Patent number 12,080,643
- Issue date Sep 3, 2024
- Intel Corporation
- Travis W. Lajoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extension of nanocomb transistor arrangements to implement gate all...
- Patent number 12,068,206
- Issue date Aug 20, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor oxide material channel regions for NMOS
- Patent number 12,068,319
- Issue date Aug 20, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor fabrication with hardmask layers
- Patent number 12,046,637
- Issue date Jul 23, 2024
- Sony Group Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layer with substantially parallel sides
- Patent number 12,020,929
- Issue date Jun 25, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-dielectric gate stack for crystalline thin film transistors
- Patent number 12,009,433
- Issue date Jun 11, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors with spacer controlled gate length
- Patent number 11,997,847
- Issue date May 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked forksheet transistors
- Patent number 11,996,411
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional integrated circuits (3DICs) including bottom gate...
- Patent number 11,996,404
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor separations in dielectric layers
- Patent number 11,991,873
- Issue date May 21, 2024
- Intel Corporation
- Travis W. Lajoie
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed thin-channel thin-film transistor
- Patent number 11,978,804
- Issue date May 7, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ARRAYS OF DOUBLE-SIDED DRAM CELLS INCLUDING CAPACITORS ON THE FRONT...
- Publication number 20250031362
- Publication date Jan 23, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20250006434
- Publication date Jan 2, 2025
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
- Publication number 20240387634
- Publication date Nov 21, 2024
- SONY GROUP CORPORATION
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...
- Publication number 20240355682
- Publication date Oct 24, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20240234422
- Publication date Jul 11, 2024
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222521
- Publication date Jul 4, 2024
- Intel Corporation
- Evan A. Clinton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING LAYER SELECT TRANSISTORS FOR S...
- Publication number 20240224536
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
Information Patent Application
SELF-ALIGNED BACKBONE FOR FORKSHEET TRANSISTORS
- Publication number 20240213250
- Publication date Jun 27, 2024
- Intel Corporation
- Shao Ming KOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS
- Publication number 20240186398
- Publication date Jun 6, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS
- Publication number 20240186127
- Publication date Jun 6, 2024
- Intel Corporation
- Ilya V. Karpov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
BACKSIDE CONTACTED SUB-FIN DIODES
- Publication number 20240170581
- Publication date May 23, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20240153956
- Publication date May 9, 2024
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20240113161
- Publication date Apr 4, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-GATE DOPED THIN FILM TRANSISTOR
- Publication number 20240105852
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS
- Publication number 20240055531
- Publication date Feb 15, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20240047559
- Publication date Feb 8, 2024
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS
- Publication number 20240049450
- Publication date Feb 8, 2024
- Intel Corporation
- Travis W. LAJOIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS

Jack T. Kavalieros

Person

Patents Grantslast 30 patents

Forming an oxide volume within a fin

Neighboring gate-all-around integrated circuit structures having co...

Dual gate control for trench shaped thin film transistors

Reducing off-state leakage in semiconductor devices

Self-aligned contacts for thin film transistors

Through plate interconnect for a vertical MIM capacitor

Transistor including wrap around source and drain contacts

Thin film transistors having double gates

Low resistance approaches for fabricating contacts and the resultin...

Multi-layer crystalline back gated thin film transistor

Arrays of double-sided dram cells including capacitors on the front...

Stacked-substrate FPGA semiconductor devices

Integrated circuit structures having differentiated interconnect li...

Extension of nanocomb transistor arrangements to implement gate all...

High performance semiconductor oxide material channel regions for NMOS

Nanowire transistor fabrication with hardmask layers

Ferroelectric capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Epitaxial layer with substantially parallel sides

Multi-dielectric gate stack for crystalline thin film transistors

Thin film transistors with spacer controlled gate length

Field effect transistors with gate electrode self-aligned to semico...

Stacked forksheet transistors

Three-dimensional integrated circuits (3DICs) including bottom gate...

Capacitor separations in dielectric layers

Memory cells with ferroelectric capacitors separate from transistor...

Method for fabricating transistor with thinned channel

Recessed thin-channel thin-film transistor

Ferroelectric gate stack for band-to-band tunneling reduction

Halogen treatment for NMOS contact resistance improvement

Patents Applicationslast 30 patents

ARRAYS OF DOUBLE-SIDED DRAM CELLS INCLUDING CAPACITORS ON THE FRONT...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...

STACKED FORKSHEET TRANSISTORS

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

INTEGRATED CIRCUIT STRUCTURES HAVING LAYER SELECT TRANSISTORS FOR S...

SELF-ALIGNED BACKBONE FOR FORKSHEET TRANSISTORS

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS

SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

BACKSIDE CONTACTED SUB-FIN DIODES

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

TOP-GATE DOPED THIN FILM TRANSISTOR

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES