Jacob M. Jensen

Person

Springfield, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Crystallized silicon carbon replacement material for NMOS source/dr...
- Patent number 10,559,689
- Issue date Feb 11, 2020
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of ultrathin functional block by solid ph...
- Patent number 10,522,510
- Issue date Dec 31, 2019
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed laser anneal process for transistor with partial melt of a r...
- Patent number 10,170,314
- Issue date Jan 1, 2019
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed laser anneal process for transistors with partial melt of a...
- Patent number 9,443,980
- Issue date Sep 13, 2016
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming superactive deactivation-resistant junction with...
- Patent number 9,240,322
- Issue date Jan 19, 2016
- Intel Corporation
- Jacob M. Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective laser annealing process for buried regions in a MOS device
- Patent number 9,196,704
- Issue date Nov 24, 2015
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed laser anneal process for transistors with partial melt of a...
- Patent number 9,006,069
- Issue date Apr 14, 2015
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a multilayer stack alloy for work function engin...
- Patent number 7,122,870
- Issue date Oct 17, 2006
- Intel Corporation
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a multilayer stack alloy for work function engin...
- Patent number 6,849,509
- Issue date Feb 1, 2005
- Intel Corporation
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...
- Publication number 20180374951
- Publication date Dec 27, 2018
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS INTEGRATION OF ULTRATHIN FUNCTIONAL BLOCK BY SOLID PH...
- Publication number 20180151541
- Publication date May 31, 2018
- Intel Corporation
- Kimin JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED LASER ANNEAL PROCESS FOR TRANSISTOR WITH PARTIAL MELT OF A R...
- Publication number 20160372599
- Publication date Dec 22, 2016
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED LASER ANNEAL PROCESS FOR TRANSISTORS WITH PARTIAL MELT OF A...
- Publication number 20150200301
- Publication date Jul 16, 2015
- Intel Corporation
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LASER ANNEALING PROCESS FOR BURIED REGIONS IN A MOS DEVICE
- Publication number 20130288438
- Publication date Oct 31, 2013
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED LASER ANNEAL PROCESS FOR TRANSISTORS WITH PARTIAL MELT OF A...
- Publication number 20130285129
- Publication date Oct 31, 2013
- Jacob Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPERACTIVE DEACTIVATION-RESISTANT JUNCTION WITH...
- Publication number 20130267084
- Publication date Oct 10, 2013
- Jacob M. Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL LAYER FOR HAFNIUM-BASED HIGH-K/METAL GATE TRANSISTORS
- Publication number 20090142899
- Publication date Jun 4, 2009
- Jacob M. Jensen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicides formed by low-temperature annealing of composition...
- Publication number 20060051596
- Publication date Mar 9, 2006
- Jacob M Jensen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of forming a multilayer stack alloy for work function engin...
- Publication number 20050009311
- Publication date Jan 13, 2005
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a multilayer stack alloy for work function engin...
- Publication number 20040108557
- Publication date Jun 10, 2004
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS

Jacob M. Jensen

Person

Patents Grantslast 30 patents

Crystallized silicon carbon replacement material for NMOS source/dr...

Heterogeneous integration of ultrathin functional block by solid ph...

Pulsed laser anneal process for transistor with partial melt of a r...

Pulsed laser anneal process for transistors with partial melt of a...

Method for forming superactive deactivation-resistant junction with...

Selective laser annealing process for buried regions in a MOS device

Pulsed laser anneal process for transistors with partial melt of a...

Methods of forming a multilayer stack alloy for work function engin...

Methods of forming a multilayer stack alloy for work function engin...

Patents Applicationslast 30 patents

CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...

HETEROGENEOUS INTEGRATION OF ULTRATHIN FUNCTIONAL BLOCK BY SOLID PH...

PULSED LASER ANNEAL PROCESS FOR TRANSISTOR WITH PARTIAL MELT OF A R...

PULSED LASER ANNEAL PROCESS FOR TRANSISTORS WITH PARTIAL MELT OF A...

SELECTIVE LASER ANNEALING PROCESS FOR BURIED REGIONS IN A MOS DEVICE

PULSED LASER ANNEAL PROCESS FOR TRANSISTORS WITH PARTIAL MELT OF A...

METHOD FOR FORMING SUPERACTIVE DEACTIVATION-RESISTANT JUNCTION WITH...

INTERFACIAL LAYER FOR HAFNIUM-BASED HIGH-K/METAL GATE TRANSISTORS

Nickel silicides formed by low-temperature annealing of composition...

Methods of forming a multilayer stack alloy for work function engin...

Methods of forming a multilayer stack alloy for work function engin...