JACOB T. WILLIAMS

Person

AUSTIN, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory with adjustable write parameter
- Patent number 11,581,030
- Issue date Feb 14, 2023
- NXP USA, INC.
- Richard Eguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with one-time programmable (OTP) cells and reading operation...
- Patent number 11,521,692
- Issue date Dec 6, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory having write detect circuitry
- Patent number 11,521,665
- Issue date Dec 6, 2022
- NXP USA, INC.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with virtual ground voltage provided to unselec...
- Patent number 11,289,144
- Issue date Mar 29, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with multiplexer transistor regulator circuit
- Patent number 11,250,898
- Issue date Feb 15, 2022
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with select line voltage control
- Patent number 11,170,849
- Issue date Nov 9, 2021
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a well bias generation circuit
- Patent number 11,145,382
- Issue date Oct 12, 2021
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with selectable hard write
- Patent number 11,056,160
- Issue date Jul 6, 2021
- NXP USA, INC.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reference generation for voltage sensing in a resistive memory
- Patent number 10,984,846
- Issue date Apr 20, 2021
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a select gate regulator circuit
- Patent number 10,796,741
- Issue date Oct 6, 2020
- NXP USA, INC.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory (NVM) cell and a method of making
- Patent number 9,397,201
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell
- Patent number 9,219,167
- Issue date Dec 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ratioless near-threshold level translator
- Patent number 9,209,810
- Issue date Dec 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Compensated hysteresis circuit
- Patent number 8,829,964
- Issue date Sep 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR SCAN CHAIN INTERFACE FOR NON-VOLATILE STORA...
- Publication number 20240112713
- Publication date Apr 4, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G01 - MEASURING TESTING
Information Patent Application
NON-VOLATILE MEMORY HAVING WRITE DETECT CIRCUITRY
- Publication number 20220358982
- Publication date Nov 10, 2022
- NXP USA, Inc.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20220301647
- Publication date Sep 22, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...
- Publication number 20220101903
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY WITH ADJUSTABLE WRITE PARAMETER
- Publication number 20220020411
- Publication date Jan 20, 2022
- NXP USA, Inc.
- Richard Eguchi
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT
- Publication number 20210319819
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE
- Publication number 20210118475
- Publication date Apr 22, 2021
- NXP USA, Inc.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
REFERENCE GENERATION FOR VOLTAGE SENSING IN A RESISTIVE MEMORY
- Publication number 20210012821
- Publication date Jan 14, 2021
- NXP USA, Inc.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20160071960
- Publication date Mar 10, 2016
- FREESCALE SEMICONDUCTOR, INC.
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RATIOLESS NEAR-THRESHOLD LEVEL TRANSLATOR
- Publication number 20150303923
- Publication date Oct 22, 2015
- JACOB T. WILLIAMS
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20150179816
- Publication date Jun 25, 2015
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATED HYSTERESIS CIRCUIT
- Publication number 20140266366
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC.
- JACOB T. WILLIAMS
- H03 - BASIC ELECTRONIC CIRCUITRY

JACOB T. WILLIAMS

Person

Patents Grantslast 30 patents

Resistive memory with adjustable write parameter

Memory with one-time programmable (OTP) cells and reading operation...

Non-volatile memory having write detect circuitry

Non-volatile memory with virtual ground voltage provided to unselec...

Non-volatile memory with multiplexer transistor regulator circuit

Memory with select line voltage control

Non-volatile memory with a well bias generation circuit

Non-volatile memory with selectable hard write

Reference generation for voltage sensing in a resistive memory

Non-volatile memory with a select gate regulator circuit

Non-volatile memory (NVM) cell and a method of making

Non-volatile memory (NVM) cell

Ratioless near-threshold level translator

Compensated hysteresis circuit

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR SCAN CHAIN INTERFACE FOR NON-VOLATILE STORA...

NON-VOLATILE MEMORY HAVING WRITE DETECT CIRCUITRY

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...

RESISTIVE MEMORY WITH ADJUSTABLE WRITE PARAMETER

NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT

NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE

REFERENCE GENERATION FOR VOLTAGE SENSING IN A RESISTIVE MEMORY

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

RATIOLESS NEAR-THRESHOLD LEVEL TRANSLATOR

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

COMPENSATED HYSTERESIS CIRCUIT