Jae Gon Lee

Person

Summerhill, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Device arrangement
- Patent number 10,669,152
- Issue date Jun 2, 2020
- Agency for Science, Technology and Research
- Navab Singh
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for thin film encapsulation (TFE) of a microelectromechanica...
- Patent number 9,505,612
- Issue date Nov 29, 2016
- Agency for Science, Technology and Research
- Jae-Wung Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET
- Patent number 9,406,801
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to tune narrow width effect with raised S/D structure
- Patent number 9,281,308
- Issue date Mar 8, 2016
- Globalfoundries Singapore Pte., Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with stressors
- Patent number 9,171,953
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress liner for stress engineering
- Patent number 8,999,863
- Issue date Apr 7, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jae Gon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,975,708
- Issue date Mar 10, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing resistance altering techniques
- Patent number 8,969,151
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel surface technique for fabrication of FinFET devices
- Patent number 8,896,072
- Issue date Nov 25, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet
- Patent number 8,889,494
- Issue date Nov 18, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,824,208
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to tune narrow width effect with raised S/D structure
- Patent number 8,785,287
- Issue date Jul 22, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory utilizing impact ionization and tunnelling and...
- Patent number 8,750,037
- Issue date Jun 10, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
FinFET with novel body contact for multiple Vt applications
- Patent number 8,735,984
- Issue date May 27, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to reduce gate contact resistance for AC reff reduction
- Patent number 8,674,457
- Issue date Mar 18, 2014
- Globalfoundries Singapore Pte., Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modifying growth rate of a device layer
- Patent number 8,633,081
- Issue date Jan 21, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical transistor device and method of fabrication
- Patent number 8,629,503
- Issue date Jan 14, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with improved retention
- Patent number 8,530,310
- Issue date Sep 10, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with stressors
- Patent number 8,492,235
- Issue date Jul 23, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,470,700
- Issue date Jun 25, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,446,779
- Issue date May 21, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
Channel surface technique for fabrication of FinFET devices
- Patent number 8,349,692
- Issue date Jan 8, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing stress-engineered spacers
- Patent number 8,338,245
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jae Gon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with a floating dielectric region and met...
- Patent number 8,242,559
- Issue date Aug 14, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source and drain of field-effect-transistor and s...
- Patent number 8,138,053
- Issue date Mar 20, 2012
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical transistor device and method of fabrication
- Patent number 8,110,470
- Issue date Feb 7, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective STI stress relaxation through ion implantation
- Patent number 8,008,744
- Issue date Aug 30, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced stress for transistors
- Patent number 7,935,589
- Issue date May 3, 2011
- Chartered Semiconductor Manufacturing, Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a nitrogenated silicon oxide layer and MOS de...
- Patent number 7,928,020
- Issue date Apr 19, 2011
- Chartered Semiconductor Manufacturing Ltd.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning nanocrystal layers
- Patent number 7,879,673
- Issue date Feb 1, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yu Chen
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
DEVICE ARRANGEMENT
- Publication number 20180312399
- Publication date Nov 1, 2018
- Navab SINGH
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Thin Film Encapsulation of Electrodes
- Publication number 20160289064
- Publication date Oct 6, 2016
- Jae-Wung Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20160035873
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THIN FILM ENCAPSULATION (TFE) OF A MICROELECTROMECHANICA...
- Publication number 20150175408
- Publication date Jun 25, 2015
- Agency for Science, Technology and Research
- Jae-Wung Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FINFET
- Publication number 20150069512
- Publication date Mar 12, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO TUNE NARROW WIDTH EFFECT WITH RAISED S/D STRUCTURE
- Publication number 20140332902
- Publication date Nov 13, 2014
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENCAPSULATING A MICRO-ELECTROMECHANICAL (MEMS) DEVICE
- Publication number 20140147955
- Publication date May 29, 2014
- Agency for Science, Technology and Research
- Jae-Wung Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
NOVEL COMPOUNDS WITH PHOTOLUMINESCENCE PROPERTIES AND APPLICATIONS...
- Publication number 20140051109
- Publication date Feb 20, 2014
- Agency for Science, Technology and Research
- Young-Tae Chang
- G01 - MEASURING TESTING
Information Patent Application
NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...
- Publication number 20130328118
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20130307038
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...
- Publication number 20130270654
- Publication date Oct 17, 2013
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES
- Publication number 20130187242
- Publication date Jul 25, 2013
- Globalfoundries Singapore PTE, LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES
- Publication number 20120228676
- Publication date Sep 13, 2012
- Globalfoundries Singapore PTE, LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20120171832
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFYING GROWTH RATE OF A DEVICE LAYER
- Publication number 20120168895
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chunshan YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET
- Publication number 20120168913
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20120139046
- Publication date Jun 7, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel methods to reduce gate contact resistance for AC reff reduction
- Publication number 20120038009
- Publication date Feb 16, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with reduced contact resistance and method of...
- Publication number 20120018815
- Publication date Jan 26, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with novel body contact for multiple Vt applications
- Publication number 20120007180
- Publication date Jan 12, 2012
- Globalfoundries Singapore PTE, LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to tune narrow width effect with raised S/D structure
- Publication number 20120007185
- Publication date Jan 12, 2012
- Globalfoundries Singapore PTE, LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH IMPROVED RETENTION
- Publication number 20110156121
- Publication date Jun 30, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20110049625
- Publication date Mar 3, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Publication number 20110044115
- Publication date Feb 24, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory utilizing impact ionization and tunnelling and...
- Publication number 20100315884
- Publication date Dec 16, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...
- Publication number 20100304556
- Publication date Dec 2, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING NANOCRYSTAL LAYERS
- Publication number 20100283101
- Publication date Nov 11, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Yu CHEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...
- Publication number 20100258868
- Publication date Oct 14, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE STI STRESS RELAXATION THROUGH ION IMPLANTATION
- Publication number 20100230777
- Publication date Sep 16, 2010
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lee Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PFET ENHANCEMENT DURING SMT
- Publication number 20090302401
- Publication date Dec 10, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS

Jae Gon Lee

Person

Patents Grantslast 30 patents

Device arrangement

Method for thin film encapsulation (TFE) of a microelectromechanica...

FinFET

Method to tune narrow width effect with raised S/D structure

FinFET with stressors

Stress liner for stress engineering

Semiconductor device with reduced contact resistance and method of...

Integrated circuit system employing resistance altering techniques

Channel surface technique for fabrication of FinFET devices

Finfet

Non-volatile memory using pyramidal nanocrystals as electron storag...

Method to tune narrow width effect with raised S/D structure

Non-volatile memory utilizing impact ionization and tunnelling and...

FinFET with novel body contact for multiple Vt applications

Methods to reduce gate contact resistance for AC reff reduction

Modifying growth rate of a device layer

Asymmetrical transistor device and method of fabrication

Memory cell with improved retention

FinFET with stressors

Semiconductor device with reduced contact resistance and method of...

Non-volatile memory using pyramidal nanocrystals as electron storag...

Channel surface technique for fabrication of FinFET devices

Integrated circuit system employing stress-engineered spacers

Integrated circuit system with a floating dielectric region and met...

Method of forming source and drain of field-effect-transistor and s...

Asymmetrical transistor device and method of fabrication

Selective STI stress relaxation through ion implantation

Enhanced stress for transistors

Method of fabricating a nitrogenated silicon oxide layer and MOS de...

Patterning nanocrystal layers

Patents Applicationslast 30 patents

DEVICE ARRANGEMENT

Thin Film Encapsulation of Electrodes

FINFET WITH STRESSORS

METHOD FOR THIN FILM ENCAPSULATION (TFE) OF A MICROELECTROMECHANICA...

FINFET

NOVEL METHOD TO TUNE NARROW WIDTH EFFECT WITH RAISED S/D STRUCTURE

METHOD OF ENCAPSULATING A MICRO-ELECTROMECHANICAL (MEMS) DEVICE

NOVEL COMPOUNDS WITH PHOTOLUMINESCENCE PROPERTIES AND APPLICATIONS...

NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...

FINFET WITH STRESSORS

SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...

CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES

CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES

FINFET WITH STRESSORS

MODIFYING GROWTH RATE OF A DEVICE LAYER

FINFET

ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION

Novel methods to reduce gate contact resistance for AC reff reduction

Semiconductor device with reduced contact resistance and method of...

FinFET with novel body contact for multiple Vt applications

Novel method to tune narrow width effect with raised S/D structure

MEMORY CELL WITH IMPROVED RETENTION

ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION

Non-volatile memory using pyramidal nanocrystals as electron storag...

Non-volatile memory utilizing impact ionization and tunnelling and...

INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...

PATTERNING NANOCRYSTAL LAYERS

INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...

SELECTIVE STI STRESS RELAXATION THROUGH ION IMPLANTATION

PFET ENHANCEMENT DURING SMT