Jae Young Lee

Person

Bedford, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Oxygen vacancy of amorphous indium gallium zinc oxide passivation b...
- Patent number 11,430,898
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Jose-Ignacio Del-Agua-Borniquel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced etch resistance for insulator layers implanted with low en...
- Patent number 11,424,164
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation with angled etch and deposition
- Patent number 11,217,491
- Issue date Jan 4, 2022
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming fin device having improved fin liner
- Patent number 10,971,403
- Issue date Apr 6, 2021
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor device having fin cut regions
- Patent number 10,720,357
- Issue date Jul 21, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,692,775
- Issue date Jun 23, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,686,033
- Issue date Jun 16, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming device having etch-resistant isolation oxide
- Patent number 10,510,870
- Issue date Dec 17, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming fin device having improved fin liner
- Patent number 10,510,610
- Issue date Dec 17, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation with angled etch and deposition
- Patent number 10,403,552
- Issue date Sep 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Techniques for forming isolation structures in a substrate
- Patent number 10,090,166
- Issue date Oct 2, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLAN...
- Publication number 20240266175
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED ETCH RESISTANCE FOR INSULATOR LAYERS IMPLANTED WITH LOW EN...
- Publication number 20220068715
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN VACANCY OF AMORPHOUS INDIUM GALLIUM ZINC OXIDE PASSIVATION B...
- Publication number 20210288186
- Publication date Sep 16, 2021
- Applied Materials, Inc.
- Jose-Ignacio Del-Agua-Borniquel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS HAVING IMPROVED ACTIVATION
- Publication number 20210119022
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Jae Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...
- Publication number 20200152519
- Publication date May 14, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...
- Publication number 20200152735
- Publication date May 14, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER
- Publication number 20200135573
- Publication date Apr 30, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE FORMATION WITH ANGLED ETCH AND DEPOSITION
- Publication number 20190341315
- Publication date Nov 7, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER
- Publication number 20190304841
- Publication date Oct 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTOR DEVICE HAVING FIN CUT REGIONS
- Publication number 20190273011
- Publication date Sep 5, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING DEVICE HAVING IMPROVED ISOLATION OXIDE
- Publication number 20190259859
- Publication date Aug 22, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING ISOLATION STRUCTURES IN A SUBSTRATE
- Publication number 20180197747
- Publication date Jul 12, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS

Jae Young Lee

Person

Patents Grantslast 30 patents

Oxygen vacancy of amorphous indium gallium zinc oxide passivation b...

Enhanced etch resistance for insulator layers implanted with low en...

Replacement gate formation with angled etch and deposition

Structure and method of forming fin device having improved fin liner

Method of forming transistor device having fin cut regions

Fin damage reduction during punch through implantation of FinFET de...

Fin damage reduction during punch through implantation of FinFET de...

Techniques for forming device having etch-resistant isolation oxide

Structure and method of forming fin device having improved fin liner

Replacement gate formation with angled etch and deposition

Techniques for forming isolation structures in a substrate

Patents Applicationslast 30 patents

CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLAN...

ENHANCED ETCH RESISTANCE FOR INSULATOR LAYERS IMPLANTED WITH LOW EN...

OXYGEN VACANCY OF AMORPHOUS INDIUM GALLIUM ZINC OXIDE PASSIVATION B...

METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS HAVING IMPROVED ACTIVATION

FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...

FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...

STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER

REPLACEMENT GATE FORMATION WITH ANGLED ETCH AND DEPOSITION

STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER

METHOD OF FORMING TRANSISTOR DEVICE HAVING FIN CUT REGIONS

STRUCTURE AND METHOD OF FORMING DEVICE HAVING IMPROVED ISOLATION OXIDE

TECHNIQUES FOR FORMING ISOLATION STRUCTURES IN A SUBSTRATE