Jaehoon PARK

Person

Suwon, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 9,356,116
- Issue date May 31, 2016
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 9,318,589
- Issue date Apr 19, 2016
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of manufacturing the same
- Patent number 9,153,678
- Issue date Oct 6, 2015
- Samsung Electro-Mechanics Co., Ltd.
- Kee Ju Um
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method for manufacturing the same
- Patent number 9,147,757
- Issue date Sep 29, 2015
- Samsung Electro-Mechanics Co., Ltd.
- Kee Ju Um
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 8,981,423
- Issue date Mar 17, 2015
- Samsung Electro-Mechanics Co., Ltd.
- Dong Soo Seo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20150076652
- Publication date Mar 19, 2015
- Samsung Electro-Mechanics Co., Ltd.
- Chang Su JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20140291722
- Publication date Oct 2, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Dong Soo SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20140239344
- Publication date Aug 28, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140167103
- Publication date Jun 19, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140167123
- Publication date Jun 19, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Kwang Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140167150
- Publication date Jun 19, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Kee Ju UM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140159104
- Publication date Jun 12, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140159106
- Publication date Jun 12, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Kee Ju UM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20140138736
- Publication date May 22, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140117405
- Publication date May 1, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Jaehoon PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130161737
- Publication date Jun 27, 2013
- Samsung Electro-Mechanics CO., LTD.
- Jaehoon PARK
- H01 - BASIC ELECTRIC ELEMENTS

Jaehoon PARK

Person

Patents Grantslast 30 patents

Power semiconductor device and method of fabricating the same

Insulated gate bipolar transistor

Power semiconductor device and method of manufacturing the same

Power semiconductor device and method for manufacturing the same

Power semiconductor device and method of fabricating the same

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME