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Jaeun YOO
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Suwon, KR
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Patents Grants
last 30 patents
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Patent Grant
Method of fabricating nitride-based compound layer, GaN substrate a...
Patent number
8,026,156
Issue date
Sep 27, 2011
Samsung LED Co., Ltd.
Soo Min Lee
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming nitride film and nitride structure
Patent number
7,943,492
Issue date
May 17, 2011
Samsung LED Co., Ltd.
Jaeun Yoo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of fabricating nitride-based compound layer, GaN substrate a...
Patent number
7,569,461
Issue date
Aug 4, 2009
Samsung Electro-Mechanics Co., Ltd.
Soo Min Lee
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
METHOD OF FORMING NITRIDE FILM AND NITRIDE STRUCTURE
Publication number
20110189457
Publication date
Aug 4, 2011
SAMSUNG ELECTRO-MECHANICS CO., LTD.
Jaeun Yoo
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FABRICATING NITRIDE-BASED COMPOUND LAYER, GaN SUBSTRATE AND...
Publication number
20090258453
Publication date
Oct 15, 2009
Samsung Electro-Mechanics Co., Ltd.
Soo Min LEE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming nitride film and nitride structure
Publication number
20070254445
Publication date
Nov 1, 2007
Samsung Electro-Mechanics CO., LTD.
Jaeun Yoo
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of fabricating nitride-based compound layer, GaN Substrate a...
Publication number
20060286777
Publication date
Dec 21, 2006
Samsung Electro-Mechanics CO., LTD.
Soo Min Lee
H01 - BASIC ELECTRIC ELEMENTS