JAEWOO JEONG

Person

SANTA CLARA, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction switching with parallel spin-momentum l...
- Patent number 12,094,508
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- See-Hun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insertion layers for perpendicularly magnetized Heusler layers with...
- Patent number 11,925,124
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunable templating layers for perpendicularly magnetized Heusler films
- Patent number 11,804,321
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dipole-coupled spin-orbit torque structure
- Patent number 11,776,726
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Templating layers for perpendicularly magnetized Heusler films/comp...
- Patent number 11,751,486
- Issue date Sep 5, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 11,557,721
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IrAl as a non-magnetic spacer layer for formation of synthetic anti...
- Patent number 11,538,987
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide interlayers containing glass-forming agents
- Patent number 11,251,366
- Issue date Feb 15, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque switching of a magnetic layer with volume unia...
- Patent number 11,005,029
- Issue date May 11, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 10,957,848
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable tetragonal ferrimagnetic heusler compound with PMA and high...
- Patent number 10,937,953
- Issue date Mar 2, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for forming highly textured thin films of heusler...
- Patent number 10,651,234
- Issue date May 12, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for perpendicularly magnetized Heusler films
- Patent number 10,396,123
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- B32 - LAYERED PRODUCTS
Information Patent Grant
Templating layers for perpendicularly magnetized heusler films
- Patent number 10,177,305
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
MnN and Heusler layers in magnetic tunnel junctions
- Patent number 10,170,696
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having cobalt-iron-beryllium magnetic layers
- Patent number 9,825,217
- Issue date Nov 21, 2017
- Samsung Electronics Co., Ltd.
- Woojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 9,761,793
- Issue date Sep 12, 2017
- Samsung Electronics Co., Ltd.
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Termination layer-compensated tunneling magnetoresistance in ferrim...
- Patent number 9,666,215
- Issue date May 30, 2017
- International Business Machines Corporation
- Sergey V. Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Underlayers for textured films of Heusler compounds
- Patent number 9,406,365
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
1-BIT 3-TERMINAL RACETRACK ARRAY WITH INTEGATED MAGNETIC TUNNEL JUN...
- Publication number 20240407177
- Publication date Dec 5, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...
- Publication number 20240347089
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...
- Publication number 20240349619
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER...
- Publication number 20240349622
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
Information Patent Application
TEMPLATING LAYERS FOR SPIN ORBIT TORQUE ASSISTED SWITCHING OF PERPE...
- Publication number 20240306517
- Publication date Sep 12, 2024
- International Business Machines Corporation
- Chirag Garg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES
- Publication number 20240249759
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX
- Publication number 20240237543
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...
- Publication number 20240237542
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING
- Publication number 20240234000
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...
- Publication number 20240155950
- Publication date May 9, 2024
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
Information Patent Application
SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE
- Publication number 20240023458
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...
- Publication number 20230413681
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS
- Publication number 20230320231
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS
- Publication number 20230317129
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE
- Publication number 20230180624
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNING PERPENDICULAR MAGNETIC ANISOTROPY OF HEUSLER COMPOUND IN MRA...
- Publication number 20230116592
- Publication date Apr 13, 2023
- International Business Machines Corporation
- MAHESH SAMANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION
- Publication number 20220262555
- Publication date Aug 18, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSERTION LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER LAYERS WITH...
- Publication number 20220223783
- Publication date Jul 14, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS
- Publication number 20220165469
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...
- Publication number 20220165939
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...
- Publication number 20220165938
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE
- Publication number 20220068538
- Publication date Mar 3, 2022
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...
- Publication number 20210175416
- Publication date Jun 10, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...
- Publication number 20210167280
- Publication date Jun 3, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE INTERLAYERS CONTAINING GLASS-FORMING AGENTS
- Publication number 20210159402
- Publication date May 27, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...
- Publication number 20200259076
- Publication date Aug 13, 2020
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...
- Publication number 20200243755
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...
- Publication number 20200105999
- Publication date Apr 2, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...
- Publication number 20190305040
- Publication date Oct 3, 2019
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Templating Layers For Perpendicularly Magnetized Heusler Films
- Publication number 20190035849
- Publication date Jan 31, 2019
- International Business Machines Corporation
- JAEWOO JEONG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

JAEWOO JEONG

Person

Patents Grantslast 30 patents

Tetragonal half metallic half-Heusler compounds

Magnetic tunneling junction switching with parallel spin-momentum l...

Insertion layers for perpendicularly magnetized Heusler layers with...

Tunable templating layers for perpendicularly magnetized Heusler films

Dipole-coupled spin-orbit torque structure

Ferrimagnetic Heusler compounds with high spin polarization

Templating layers for perpendicularly magnetized Heusler films/comp...

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Heusler compounds with non-magnetic spacer layer for formation of s...

IrAl as a non-magnetic spacer layer for formation of synthetic anti...

Oxide interlayers containing glass-forming agents

Spin transfer torque switching of a magnetic layer with volume unia...

Heusler compounds with non-magnetic spacer layer for formation of s...

Tunable tetragonal ferrimagnetic heusler compound with PMA and high...

Templating layers for forming highly textured thin films of heusler...

Templating layers for perpendicularly magnetized Heusler films

Templating layers for perpendicularly magnetized heusler films

MnN and Heusler layers in magnetic tunnel junctions

Magnetic memory device having cobalt-iron-beryllium magnetic layers

Magnetic memory device and method for manufacturing the same

Termination layer-compensated tunneling magnetoresistance in ferrim...

Underlayers for textured films of Heusler compounds

Patents Applicationslast 30 patents

1-BIT 3-TERMINAL RACETRACK ARRAY WITH INTEGATED MAGNETIC TUNNEL JUN...

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...

TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER...

TEMPLATING LAYERS FOR SPIN ORBIT TORQUE ASSISTED SWITCHING OF PERPE...

MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FRE...

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING

SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...

SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE

SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULA...

TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS

TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

TUNING PERPENDICULAR MAGNETIC ANISOTROPY OF HEUSLER COMPOUND IN MRA...

FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION

INSERTION LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER LAYERS WITH...

TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS

TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...

IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...

DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE

MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...

HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...

OXIDE INTERLAYERS CONTAINING GLASS-FORMING AGENTS

Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...

TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...

SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...

TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...

Templating Layers For Perpendicularly Magnetized Heusler Films