Jai-Kyun Park

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Hwaseong-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming semiconductor device including protrusion type is...
- Patent number 9,741,611
- Issue date Aug 22, 2017
- Samsung Electronics Co., Ltd.
- Dong-hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including protrusion type isolation layer
- Patent number 8,115,246
- Issue date Feb 14, 2012
- Samsung Electronics Co., Ltd.
- Dong-hyun Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of manufacturing semiconductor device having recess channel...
- Patent number 8,003,464
- Issue date Aug 23, 2011
- Samsung Electronics Co., Ltd.
- Gil-sub Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING PROTRUSION TYPE IS...
- Publication number 20150333151
- Publication date Nov 19, 2015
- Samsung Electronics Co., Ltd.
- Dong-hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING PROTRUSION TYPE ISOLATION LAYER
- Publication number 20120119290
- Publication date May 17, 2012
- Samsung Electronics Co., Ltd.
- Dong-hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including protrusion type isolation layer
- Publication number 20100258860
- Publication date Oct 14, 2010
- Dong-hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device
- Publication number 20100237394
- Publication date Sep 23, 2010
- Jai-Kyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of manufacturing semiconductor device having recess channel...
- Publication number 20090203204
- Publication date Aug 13, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Gil-sub Kim
- H01 - BASIC ELECTRIC ELEMENTS