Jamal Ramdani

Person

Scarborough, ME, US

People

Patents Grantslast 30 patents

Information Patent Grant
Normally-off gallium nitride-based semiconductor devices
- Patent number 9,385,199
- Issue date Jul 5, 2016
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside stress compensation method for making gallium nitride or o...
- Patent number 9,111,753
- Issue date Aug 18, 2015
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 9,082,817
- Issue date Jul 14, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 9,064,928
- Issue date Jun 23, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode GaN MOSFET with low leakage current and improved r...
- Patent number 8,940,593
- Issue date Jan 27, 2015
- Texas Instruments Incorporated
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off gallium nitride-based semiconductor devices
- Patent number 8,802,516
- Issue date Aug 12, 2014
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside stress compensation for gallium nitride or other nitride-b...
- Patent number 8,785,305
- Issue date Jul 22, 2014
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress compensation for large area gallium nitride or other nitride...
- Patent number 8,723,296
- Issue date May 13, 2014
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode GaN MOSFET with low leakage current and improved r...
- Patent number 8,624,260
- Issue date Jan 7, 2014
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 8,592,292
- Issue date Nov 26, 2013
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heart monitoring system or other system for measuring magnetic fields
- Patent number 8,591,427
- Issue date Nov 26, 2013
- National Semiconductor Corporation
- Lawrence H. Zuckerman
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Magneto electric sensor with injected up-conversion or down-conversion
- Patent number 8,581,579
- Issue date Nov 12, 2013
- National Semiconductor Corporation
- Lawrence H. Zuckerman
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
SiGe heterojunction bipolar transistor and method of forming a SiGe...
- Patent number 8,377,788
- Issue date Feb 19, 2013
- National Semiconductor Corporation
- Wibo Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bipolar transistor structure
- Patent number 8,148,799
- Issue date Apr 3, 2012
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe:C HBT with phosphorous atomic layer doping
- Patent number 7,892,915
- Issue date Feb 22, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a self aligned silicon germanium (S...
- Patent number 7,846,806
- Issue date Dec 7, 2010
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a polyemit module for a self aligne...
- Patent number 7,838,375
- Issue date Nov 23, 2010
- National Semiconductor Corporation
- Mingwei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having localized insulated block in bulk subst...
- Patent number 7,829,429
- Issue date Nov 9, 2010
- National Semiconductor Corporation
- Craig Printy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a single deposition emitter/base in...
- Patent number 7,781,295
- Issue date Aug 24, 2010
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned bipolar transistor structure using...
- Patent number 7,687,887
- Issue date Mar 30, 2010
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilization of doped glass on the sidewall of the emitter window in...
- Patent number 7,572,708
- Issue date Aug 11, 2009
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a fully self aligned bipolar transi...
- Patent number 7,566,626
- Issue date Jul 28, 2009
- National Semiconductor Corporation
- Mingwei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe HBT with arsenic atomic layer doping
- Patent number 7,485,538
- Issue date Feb 3, 2009
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES
- Publication number 20140312358
- Publication date Oct 23, 2014
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE STRESS COMPENSATION FOR GALLIUM NITRIDE OR OTHER NITRIDE-B...
- Publication number 20140295651
- Publication date Oct 2, 2014
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved R...
- Publication number 20140094005
- Publication date Apr 3, 2014
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...
- Publication number 20140051226
- Publication date Feb 20, 2014
- National Semiconductor Corporation
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...
- Publication number 20140042458
- Publication date Feb 13, 2014
- National Semiconductor Corporation
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe Heterojunction Bipolar Transistor and Method of Forming a SiGe...
- Publication number 20120119262
- Publication date May 17, 2012
- Wibo Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrophobic Solar Concentrator and Method of Using and Forming the...
- Publication number 20120067396
- Publication date Mar 22, 2012
- Visvamohan Yegnashankaran
- G02 - OPTICS
Information Patent Application
Growth of multi-layer group III-nitride buffers on large-area silic...
- Publication number 20120056244
- Publication date Mar 8, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved R...
- Publication number 20110186855
- Publication date Aug 4, 2011
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING
- Publication number 20110180848
- Publication date Jul 28, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally-off gallium nitride-based semiconductor devices
- Publication number 20110180854
- Publication date Jul 28, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heart monitoring system or other system for measuring magnetic fields
- Publication number 20110152703
- Publication date Jun 23, 2011
- National Semiconductor Corporation
- Lawrence H. Zuckerman
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Magneto-electric sensor with injected up-conversion or down-conversion
- Publication number 20110148403
- Publication date Jun 23, 2011
- National Semiconductor Corporation
- Lawrence H. Zuckerman
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Stress compensation for large area gallium nitride or other nitride...
- Publication number 20110140242
- Publication date Jun 16, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside stress compensation for gallium nitride or other nitride-b...
- Publication number 20110140118
- Publication date Jun 16, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low OHMIC contacts containing germanium for gallium nitride or othe...
- Publication number 20110140173
- Publication date Jun 16, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOCALIZED INSULATED BLOCK IN BULK SUBST...
- Publication number 20110042778
- Publication date Feb 24, 2011
- National Semiconductor Corporation
- Craig Printy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE
- Publication number 20100127352
- Publication date May 27, 2010
- National Semiconductor Corporation
- Monir El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS

Jamal Ramdani

Person

Patents Grantslast 30 patents

Normally-off gallium nitride-based semiconductor devices

Backside stress compensation method for making gallium nitride or o...

Growth of multi-layer group III-nitride buffers on large-area silic...

Growth of multi-layer group III-nitride buffers on large-area silic...

Enhancement-mode GaN MOSFET with low leakage current and improved r...

Normally-off gallium nitride-based semiconductor devices

Backside stress compensation for gallium nitride or other nitride-b...

Stress compensation for large area gallium nitride or other nitride...

Enhancement-mode GaN MOSFET with low leakage current and improved r...

Growth of multi-layer group III-nitride buffers on large-area silic...

Heart monitoring system or other system for measuring magnetic fields

Magneto electric sensor with injected up-conversion or down-conversion

SiGe heterojunction bipolar transistor and method of forming a SiGe...

Self-aligned bipolar transistor structure

High performance SiGe:C HBT with phosphorous atomic layer doping

System and method for providing a self aligned silicon germanium (S...

System and method for providing a polyemit module for a self aligne...

Semiconductor device having localized insulated block in bulk subst...

System and method for providing a single deposition emitter/base in...

Method of forming a self-aligned bipolar transistor structure using...

Utilization of doped glass on the sidewall of the emitter window in...

System and method for providing a fully self aligned bipolar transi...

High performance SiGe HBT with arsenic atomic layer doping

Patents Applicationslast 30 patents

NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES

BACKSIDE STRESS COMPENSATION FOR GALLIUM NITRIDE OR OTHER NITRIDE-B...

Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved R...

GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...

GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...

SiGe Heterojunction Bipolar Transistor and Method of Forming a SiGe...

Hydrophobic Solar Concentrator and Method of Using and Forming the...

Growth of multi-layer group III-nitride buffers on large-area silic...

Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved R...

HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING

Normally-off gallium nitride-based semiconductor devices

Heart monitoring system or other system for measuring magnetic fields

Magneto-electric sensor with injected up-conversion or down-conversion

Stress compensation for large area gallium nitride or other nitride...

Backside stress compensation for gallium nitride or other nitride-b...

Low OHMIC contacts containing germanium for gallium nitride or othe...

SEMICONDUCTOR DEVICE HAVING LOCALIZED INSULATED BLOCK IN BULK SUBST...

SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE