James A. Slinkman

Person

Montpelier, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 11,152,495
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 11,081,572
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 10,629,710
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 10,600,893
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 10,109,553
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 10,068,827
- Issue date Sep 4, 2018
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI-MOSFET gate insulation layer with different thickness
- Patent number 9,978,849
- Issue date May 22, 2018
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps formed by porous silicon removal
- Patent number 9,755,015
- Issue date Sep 5, 2017
- GLOBALFOUNDRIES Inc.
- Richard A. Phelps
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 9,704,978
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 9,666,701
- Issue date May 30, 2017
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Single-chip field effect transistor (FET) switch with silicon germa...
- Patent number 9,653,477
- Issue date May 16, 2017
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip field effect transistor (FET) switch with silicon germa...
- Patent number 9,646,993
- Issue date May 9, 2017
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 9,601,606
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon-on-insulator heat sink
- Patent number 9,530,711
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES Inc.
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 9,324,628
- Issue date Apr 26, 2016
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin body switch transistor
- Patent number 9,214,561
- Issue date Dec 15, 2015
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High linearity SOI wafer for low-distortion circuit applications
- Patent number 9,165,819
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES Inc.
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaling of bipolar transistors
- Patent number 9,076,810
- Issue date Jul 7, 2015
- International Business Machines Corporation
- Alvin J. Joseph
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon-on-insulator heat sink
- Patent number 9,059,269
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High linearity SOI wafer for low-distortion circuit applications
- Patent number 8,951,896
- Issue date Feb 10, 2015
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI radio frequency switch with enhanced signal fidelity and electr...
- Patent number 8,916,467
- Issue date Dec 23, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral extended drain metal oxide semiconductor field effect trans...
- Patent number 8,901,676
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaling of bipolar transistors
- Patent number 8,872,236
- Issue date Oct 28, 2014
- International Business Machines Corporation
- Alvin Jose Joseph
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SOI radio frequency switch with enhanced electrical isolation
- Patent number 8,866,226
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation for a charge in a silicon substrate
- Patent number 8,828,746
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble gas implantation region in top silicon layer of semiconductor...
- Patent number 8,748,285
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,709,903
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,698,244
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,564,067
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator substrate and structure including multip...
- Patent number 8,492,294
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20200027973
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Alan B. BOTULA
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20190363182
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20180331207
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Alan B. BOTULA
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20180294346
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20180204926
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAPS FORMED BY POROUS SILICON REMOVAL
- Publication number 20170330933
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Richard A. Phelps
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20170200665
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20170186845
- Publication date Jun 29, 2017
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20170117206
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20160204048
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20160204233
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20160126158
- Publication date May 5, 2016
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CHIP FIELD EFFECT TRANSISTOR (FET) SWITCH WITH SILICON GERMA...
- Publication number 20150364492
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR HEAT SINK
- Publication number 20150255363
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES
- Publication number 20150243578
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CHIP FIELD EFFECT TRANSISTOR (FET) SWITCH WITH SILICON GERMA...
- Publication number 20150194416
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LINEARITY SOI WAFER FOR LOW-DISTORTION CIRCUIT APPLICATIONS
- Publication number 20150072504
- Publication date Mar 12, 2015
- International Business Machines Corporation
- ALAN B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALING OF BIPOLAR TRANSISTORS
- Publication number 20150024570
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LINEARITY SOI WAFER FOR LOW-DISTORTION CIRCUIT APPLICATIONS
- Publication number 20150004778
- Publication date Jan 1, 2015
- International Business Machines Corporation
- ALAN B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN BODY SWITCH TRANSISTOR
- Publication number 20150001622
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE
- Publication number 20140306325
- Publication date Oct 16, 2014
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR HEAT SINK
- Publication number 20140191322
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE
- Publication number 20140131800
- Publication date May 15, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20140004687
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20130161618
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...
- Publication number 20130134518
- Publication date May 30, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...
- Publication number 20130001589
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Michel J. Abou-Khalil
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND STRUCTURE INCLUDING MULTIP...
- Publication number 20130005157
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...
- Publication number 20120168766
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Michel J. Abou-Khalil
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...
- Publication number 20120168817
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS

James A. Slinkman

Person

Patents Grantslast 30 patents

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

SOI-MOSFET gate insulation layer with different thickness

Air gaps formed by porous silicon removal

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Single-chip field effect transistor (FET) switch with silicon germa...

Single-chip field effect transistor (FET) switch with silicon germa...

Integrated circuit heat dissipation using nanostructures

Silicon-on-insulator heat sink

Integrated circuit heat dissipation using nanostructures

Thin body switch transistor

High linearity SOI wafer for low-distortion circuit applications

Scaling of bipolar transistors

Silicon-on-insulator heat sink

High linearity SOI wafer for low-distortion circuit applications

SOI radio frequency switch with enhanced signal fidelity and electr...

Lateral extended drain metal oxide semiconductor field effect trans...

Scaling of bipolar transistors

SOI radio frequency switch with enhanced electrical isolation

Compensation for a charge in a silicon substrate

Noble gas implantation region in top silicon layer of semiconductor...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Semiconductor-on-insulator substrate and structure including multip...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

AIR GAPS FORMED BY POROUS SILICON REMOVAL

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

SINGLE-CHIP FIELD EFFECT TRANSISTOR (FET) SWITCH WITH SILICON GERMA...

SILICON-ON-INSULATOR HEAT SINK

INTEGRATED CIRCUIT HEAT DISSIPATION USING NANOSTRUCTURES

SINGLE-CHIP FIELD EFFECT TRANSISTOR (FET) SWITCH WITH SILICON GERMA...

HIGH LINEARITY SOI WAFER FOR LOW-DISTORTION CIRCUIT APPLICATIONS

SCALING OF BIPOLAR TRANSISTORS

HIGH LINEARITY SOI WAFER FOR LOW-DISTORTION CIRCUIT APPLICATIONS

THIN BODY SWITCH TRANSISTOR

COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE

SILICON-ON-INSULATOR HEAT SINK

COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...

LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...

SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND STRUCTURE INCLUDING MULTIP...

LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...

LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...