James A. Teplik

Person

Mesa, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with an etch stop layer and method therefor
- Patent number 11,437,301
- Issue date Sep 6, 2022
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,957,790
- Issue date Mar 23, 2021
- NXP USA, INC.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a protection layer and methods of fabric...
- Patent number 10,741,496
- Issue date Aug 11, 2020
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISHFET and Schottky device integration
- Patent number 10,249,615
- Issue date Apr 2, 2019
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with charge enhanced field plate structure and method
- Patent number 9,972,703
- Issue date May 15, 2018
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented field plate structure
- Patent number 9,893,156
- Issue date Feb 13, 2018
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented field plate structure
- Patent number 9,647,075
- Issue date May 9, 2017
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with charge enhanced field plate structure and method
- Patent number 9,425,267
- Issue date Aug 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN dual field plate device with single field plate metal
- Patent number 9,024,324
- Issue date May 5, 2015
- FREESCALE SEMICONDUCTOR, INC.
- James A. Teplik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISHFET and Schottky device integration
- Patent number 8,946,779
- Issue date Feb 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a semiconductor substrate
- Patent number 5,312,764
- Issue date May 17, 1994
- Motorola, Inc.
- Clifford I. Drowley
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR
- Publication number 20220122903
- Publication date Apr 21, 2022
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...
- Publication number 20220102529
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A PROTECTION LAYER AND METHODS OF FABRIC...
- Publication number 20200176389
- Publication date Jun 4, 2020
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20190157440
- Publication date May 23, 2019
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED FIELD PLATE STRUCTURE
- Publication number 20170200794
- Publication date Jul 13, 2017
- NXP USA, Inc.
- JENN HWA HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED FIELD PLATE STRUCTURE
- Publication number 20170077245
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD
- Publication number 20160343833
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MISHFET AND SCHOTTKY DEVICE INTEGRATION
- Publication number 20150123168
- Publication date May 7, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD
- Publication number 20140264360
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEXAS
- Jenn Hwa HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MISHFET AND SCHOTTKY DEVICE INTEGRATION
- Publication number 20140239346
- Publication date Aug 28, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Dual Field Plate Device with Single Field Plate Metal
- Publication number 20140061659
- Publication date Mar 6, 2014
- James A. Teplik
- H01 - BASIC ELECTRIC ELEMENTS

James A. Teplik

Person

Patents Grantslast 30 patents

Methods for forming semiconductor devices using sacrificial capping...

Device with an etch stop layer and method therefor

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor device with selectively etched surface passivation

Semiconductor devices with a protection layer and methods of fabric...

Semiconductor devices with doped regions functioning as enhanced re...

MISHFET and Schottky device integration

Transistor with charge enhanced field plate structure and method

Segmented field plate structure

Segmented field plate structure

Transistor with charge enhanced field plate structure and method

GaN dual field plate device with single field plate metal

MISHFET and Schottky device integration

Method of doping a semiconductor substrate

Patents Applicationslast 30 patents

DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR

METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH A PROTECTION LAYER AND METHODS OF FABRIC...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEGMENTED FIELD PLATE STRUCTURE

SEGMENTED FIELD PLATE STRUCTURE

TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

MISHFET AND SCHOTTKY DEVICE INTEGRATION

TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

MISHFET AND SCHOTTKY DEVICE INTEGRATION

GaN Dual Field Plate Device with Single Field Plate Metal