James Allan Bondur

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Walden, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Gas mixture and method for anisotropic selective etch of nitride
- Patent number 4,832,787
- Issue date May 23, 1989
- International Business Machines Corporation
- James A. Bondur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RIE process for etching silicon isolation trenches and polycides wi...
- Patent number 4,726,879
- Issue date Feb 23, 1988
- International Business Machines Corporation
- James A. Bondur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive ion etching method for producing deep dielectric isolation...
- Patent number 4,139,442
- Issue date Feb 13, 1979
- International Business Machines Corporation
- James A. Bondur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming isolated regions of silicon utilizing reactive i...
- Patent number 4,104,086
- Issue date Aug 1, 1978
- International Business Machines Corporation
- James Allan Bondur
- H01 - BASIC ELECTRIC ELEMENTS