James Douglas Beasom

Person

Melbourne, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
PMOS depletable drain extension made from NMOS dual depletable drai...
- Patent number RE45814
- Issue date Nov 24, 2015
- Intersil Americas LLC
- James D. Beasom
- 001 -
Information Patent Grant
Base for a NPN bipolar transistor
- Patent number 9,111,955
- Issue date Aug 18, 2015
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a MOSFET structure
- Patent number RE44730
- Issue date Jan 28, 2014
- Intersil Americas Inc.
- James D. Beasom
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Method of manufacturing a MOSFET structure
- Patent number RE44720
- Issue date Jan 21, 2014
- Intersil Americas Inc.
- James D. Beasom
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
PMOS depletable drain extension made from NMOS dual depletable drai...
- Patent number RE44430
- Issue date Aug 13, 2013
- Intersil Americas Inc.
- James D. Beasom
- 257 - Active solid-state devices
Information Patent Grant
Bipolar method and structure having improved BVCEO/RCS trade-off ma...
- Patent number RE44140
- Issue date Apr 9, 2013
- Intersil Americas Inc.
- James D. Beasom
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Integrated process for thin film resistors with silicides
- Patent number 8,338,914
- Issue date Dec 25, 2012
- Intersil Americas Inc.
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar method and structure having improved BVCEO/RCS trade-off ma...
- Patent number RE43042
- Issue date Dec 27, 2011
- Intersil Americas Inc.
- James D. Beasom
- 257 - Active solid-state devices
Information Patent Grant
Depletable cathode low charge storage diode
- Patent number 7,973,360
- Issue date Jul 5, 2011
- Intersil Americas Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS depletable drain extension made from NMOS dual depletable drai...
- Patent number 7,829,954
- Issue date Nov 9, 2010
- Intersil Americas Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletable cathode low charge storage diode
- Patent number 7,759,728
- Issue date Jul 20, 2010
- Intersil Americas Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a MOSFET structure
- Patent number 7,687,336
- Issue date Mar 30, 2010
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated process for thin film resistors with silicides
- Patent number 7,662,692
- Issue date Feb 16, 2010
- Intersil Americas Inc.
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS structure with lateral extension structure for reduced...
- Patent number 7,655,515
- Issue date Feb 2, 2010
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit having a device wafer with...
- Patent number 7,605,052
- Issue date Oct 20, 2009
- Intersil Corporation
- Joseph A. Czagas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed nitride layer for integrated circuits
- Patent number 7,605,445
- Issue date Oct 20, 2009
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having variable value emitter ballast resistors
- Patent number 7,564,117
- Issue date Jul 21, 2009
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS depletable drain extension made from NMOS dual depletable drai...
- Patent number 7,547,592
- Issue date Jun 16, 2009
- Intersil Americas, Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar method and structure having improved BVCEO/RCS trade-off ma...
- Patent number 7,473,983
- Issue date Jan 6, 2009
- Intersil Americas Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing lateral MOSFET structure of an integrated c...
- Patent number 7,410,860
- Issue date Aug 12, 2008
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletable cathode low charge storage diode
- Patent number 7,385,246
- Issue date Jun 10, 2008
- Intersil Americas Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated process for thin film resistors with silicides
- Patent number 7,341,958
- Issue date Mar 11, 2008
- Intersil Americas Inc.
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar Transistor Devices
- Patent number 7,327,012
- Issue date Feb 5, 2008
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor for an integrated circuit having variable value...
- Patent number 7,314,791
- Issue date Jan 1, 2008
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar method and structure having improved BVCEO/RCS trade-off ma...
- Patent number 7,285,469
- Issue date Oct 23, 2007
- Intersil Americas
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a device wafer with a diffused doped back...
- Patent number 7,285,475
- Issue date Oct 23, 2007
- Intersil Americas Inc.
- Joseph A. Czagas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a PN junction diode
- Patent number 7,161,223
- Issue date Jan 9, 2007
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for non-single-polycrystalline capacitor in an...
- Patent number 7,098,103
- Issue date Aug 29, 2006
- Intersil Americas, Inc.
- Dustin A. Woodbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed nitride layer for integrated circuits
- Patent number 7,071,111
- Issue date Jul 4, 2006
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistors and resulting product
- Patent number 7,067,383
- Issue date Jun 27, 2006
- Intersil Americas, Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE
- Publication number 20100193895
- Publication date Aug 5, 2010
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BASE FOR A NPN BIPOLAR TRANSISTOR
- Publication number 20100129975
- Publication date May 27, 2010
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PROCESS FOR THIN FILM RESISTORS WITH SILICIDES
- Publication number 20100117198
- Publication date May 13, 2010
- Intersil Americas Inc.
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS DEPLETABLE DRAIN EXTENSION MADE FROM NMOS DUAL DEPLETABLE DRAI...
- Publication number 20090146218
- Publication date Jun 11, 2009
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE
- Publication number 20080237775
- Publication date Oct 2, 2008
- Intersil Americas Inc.,
- James Douglas BEASOM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A MOSFET STRUCTURE
- Publication number 20080176372
- Publication date Jul 24, 2008
- Intersil Americas Inc.
- James D. Beasom
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
BIPOLAR TRANSISTOR HAVING VARIABLE VALUE EMITTER BALLAST RESISTORS
- Publication number 20080087983
- Publication date Apr 17, 2008
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN INTEGRATED CIRCUIT HAVING A DEVICE WAFER WITH...
- Publication number 20080026595
- Publication date Jan 31, 2008
- Intersil Americas Inc.
- Joseph A. Czagas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PROCESS FOR THIN FILM RESISTORS WITH SILICIDES
- Publication number 20080026536
- Publication date Jan 31, 2008
- Intersil Americas Inc.
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR METHOD AND STRUCTURE HAVING IMPROVED BVCEO/RCS TRADE-OFF MA...
- Publication number 20070273006
- Publication date Nov 29, 2007
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar method and structure having improved BVCEO/RCS trade-off ma...
- Publication number 20070052066
- Publication date Mar 8, 2007
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletable cathode low charge storage diode
- Publication number 20070018208
- Publication date Jan 25, 2007
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS depletable drain extension made from NMOS dual depletable drai...
- Publication number 20060278939
- Publication date Dec 14, 2006
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sealed nitride layer for integrated circuits
- Publication number 20060231864
- Publication date Oct 19, 2006
- Intersil Americas Inc.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making Bipolar Transistors and Resulting Product
- Publication number 20060199350
- Publication date Sep 7, 2006
- Intersil Americas, Inc.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated process for thin film resistors with silicides
- Publication number 20060166505
- Publication date Jul 27, 2006
- John T. Gasner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor for an integrated circuit having variable value...
- Publication number 20060063341
- Publication date Mar 23, 2006
- INTERSIL AMERICAS INC.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing lateral MOSFET structure of an integrated c...
- Publication number 20060024897
- Publication date Feb 2, 2006
- INTERSIL AMERICAS INC.
- James D. Beasom
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Integrated circuit having a device wafer with a diffused doped back...
- Publication number 20060009007
- Publication date Jan 12, 2006
- INTERSIL AMERICAS INC.
- Joseph A. Czagas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral DMOS structure with lateral extension structure for reduced...
- Publication number 20050214995
- Publication date Sep 29, 2005
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for non-single-polycrystalline capacitor in an...
- Publication number 20050202629
- Publication date Sep 15, 2005
- INTERSIL AMERICAS INC.
- Dustin A. Woodbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making bipolar transistors and resulting product
- Publication number 20050196930
- Publication date Sep 8, 2005
- INTERSIL AMERICAS INC.
- James Douglas Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with a MOS capacitor
- Publication number 20050045934
- Publication date Mar 3, 2005
- INTERSIL AMERICAS INC.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET structure of an integrated circuit having separated...
- Publication number 20050048726
- Publication date Mar 3, 2005
- INTERSIL AMERICAS INC.
- James D. Beasom
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Lateral MOSFET structure of an integrated circuit having separated...
- Publication number 20050035424
- Publication date Feb 17, 2005
- INTERSIL AMERICAS INC.
- James D. Beasom
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Base for a NPN bipolar transistor
- Publication number 20050029626
- Publication date Feb 10, 2005
- INTERSIL AMERICAS INC.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with a MOS structure having reduced parasitic bi...
- Publication number 20040180485
- Publication date Sep 16, 2004
- INTERSIL AMERICAS INC.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced mask count buried layer process
- Publication number 20040171229
- Publication date Sep 2, 2004
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit having a device wafer with a diffused doped back...
- Publication number 20040161905
- Publication date Aug 19, 2004
- INTERSIL AMERICAS INC.
- Joseph A. Czagas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor for an integrated circuit having variable value...
- Publication number 20040159912
- Publication date Aug 19, 2004
- INTERSIL AMERICAS INC.
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS

James Douglas Beasom

Person

Patents Grantslast 30 patents

PMOS depletable drain extension made from NMOS dual depletable drai...

Base for a NPN bipolar transistor

Method of manufacturing a MOSFET structure

Method of manufacturing a MOSFET structure

PMOS depletable drain extension made from NMOS dual depletable drai...

Bipolar method and structure having improved BVCEO/RCS trade-off ma...

Integrated process for thin film resistors with silicides

Bipolar method and structure having improved BVCEO/RCS trade-off ma...

Depletable cathode low charge storage diode

PMOS depletable drain extension made from NMOS dual depletable drai...

Depletable cathode low charge storage diode

Method of manufacturing a MOSFET structure

Integrated process for thin film resistors with silicides

Lateral DMOS structure with lateral extension structure for reduced...

Method of forming an integrated circuit having a device wafer with...

Sealed nitride layer for integrated circuits

Bipolar transistor having variable value emitter ballast resistors

PMOS depletable drain extension made from NMOS dual depletable drai...

Bipolar method and structure having improved BVCEO/RCS trade-off ma...

Method of manufacturing lateral MOSFET structure of an integrated c...

Depletable cathode low charge storage diode

Integrated process for thin film resistors with silicides

Bipolar Transistor Devices

Bipolar transistor for an integrated circuit having variable value...

Bipolar method and structure having improved BVCEO/RCS trade-off ma...

Integrated circuit having a device wafer with a diffused doped back...

Integrated circuit with a PN junction diode

Method and structure for non-single-polycrystalline capacitor in an...

Sealed nitride layer for integrated circuits

Method of making bipolar transistors and resulting product

Patents Applicationslast 30 patents

DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE

BASE FOR A NPN BIPOLAR TRANSISTOR

INTEGRATED PROCESS FOR THIN FILM RESISTORS WITH SILICIDES

PMOS DEPLETABLE DRAIN EXTENSION MADE FROM NMOS DUAL DEPLETABLE DRAI...

DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE

METHOD OF MANUFACTURING A MOSFET STRUCTURE

BIPOLAR TRANSISTOR HAVING VARIABLE VALUE EMITTER BALLAST RESISTORS

METHOD OF FORMING AN INTEGRATED CIRCUIT HAVING A DEVICE WAFER WITH...

INTEGRATED PROCESS FOR THIN FILM RESISTORS WITH SILICIDES

BIPOLAR METHOD AND STRUCTURE HAVING IMPROVED BVCEO/RCS TRADE-OFF MA...

Bipolar method and structure having improved BVCEO/RCS trade-off ma...

Depletable cathode low charge storage diode

PMOS depletable drain extension made from NMOS dual depletable drai...

Sealed nitride layer for integrated circuits

Method of Making Bipolar Transistors and Resulting Product

Integrated process for thin film resistors with silicides

Bipolar transistor for an integrated circuit having variable value...

Method of manufacturing lateral MOSFET structure of an integrated c...

Integrated circuit having a device wafer with a diffused doped back...

Lateral DMOS structure with lateral extension structure for reduced...

Method and structure for non-single-polycrystalline capacitor in an...

Method of making bipolar transistors and resulting product

Integrated circuit with a MOS capacitor

Lateral MOSFET structure of an integrated circuit having separated...

Lateral MOSFET structure of an integrated circuit having separated...

Base for a NPN bipolar transistor

Integrated circuit with a MOS structure having reduced parasitic bi...

Reduced mask count buried layer process

Integrated circuit having a device wafer with a diffused doped back...

Bipolar transistor for an integrated circuit having variable value...