James J. Chambers

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods to enhance effective work function of mid-gap metal by inco...
- Patent number 10,439,040
- Issue date Oct 8, 2019
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate
- Patent number 10,068,983
- Issue date Sep 4, 2018
- Texas Instruments Incorporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to enhance effective work function of mid-gap metal by inco...
- Patent number 9,721,796
- Issue date Aug 1, 2017
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate
- Patent number 9,431,509
- Issue date Aug 30, 2016
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for metal gate stack oxygen concentration cont...
- Patent number 9,397,009
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to enhance effective work function of mid-gap metal by inco...
- Patent number 9,202,884
- Issue date Dec 1, 2015
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for metal gate stack oxygen concentration cont...
- Patent number 9,087,918
- Issue date Jul 21, 2015
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including SiON gate dielectric with portions h...
- Patent number 8,748,996
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors including SiON gate dielectric with enhanced nitrog...
- Patent number 8,748,992
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual work function metal gate CMOS with selective capping
- Patent number 8,658,489
- Issue date Feb 25, 2014
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for metal gate stack oxygen concentration cont...
- Patent number 8,643,113
- Issue date Feb 4, 2014
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using a metal microstructure contro...
- Patent number 8,575,014
- Issue date Nov 5, 2013
- Texas Instruments Incorporated
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOS transistors including SiON gate dielectric wi...
- Patent number 8,450,221
- Issue date May 28, 2013
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including SiON gate dielectric with portions h...
- Patent number 8,441,078
- Issue date May 14, 2013
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple-gate transistor with reverse shallow trench isolation
- Patent number 8,389,391
- Issue date Mar 5, 2013
- Texas Instruments Incorporated
- James J. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to maximize nitrogen concentration at the top surface of gat...
- Patent number 8,198,184
- Issue date Jun 12, 2012
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using a metal microstructure contro...
- Patent number 8,124,529
- Issue date Feb 28, 2012
- Texas Instruments Incorporated
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integration of replacement gate in CMOS flow
- Patent number 8,062,966
- Issue date Nov 22, 2011
- Texas Instruments Incorporated
- Freido Mehrad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-contamination control for processing of circuits comprising M...
- Patent number 7,968,443
- Issue date Jun 28, 2011
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to enhance effective work function of mid-gap metal by inco...
- Patent number 7,960,802
- Issue date Jun 14, 2011
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function CMOS devices utilizing carbide based electrodes
- Patent number 7,842,567
- Issue date Nov 30, 2010
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of uniform silicate gate dielectrics
- Patent number 7,799,668
- Issue date Sep 21, 2010
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature polysilicon oxide process for high-K dielectric/met...
- Patent number 7,723,173
- Issue date May 25, 2010
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for a triple-gate transistor with reverse STI
- Patent number 7,678,675
- Issue date Mar 16, 2010
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor CMOS devices and methods with NMOS high-k dielectric...
- Patent number 7,642,146
- Issue date Jan 5, 2010
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems to mitigate etch stop clipping for shallow tren...
- Patent number 7,625,807
- Issue date Dec 1, 2009
- Texas Instruments Incorporated
- Manuel A. Quevedo-Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for dual work function metal gate electrodes by control o...
- Patent number 7,612,422
- Issue date Nov 3, 2009
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function control of metals
- Patent number 7,601,577
- Issue date Oct 13, 2009
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect control in gate dielectrics
- Patent number 7,601,578
- Issue date Oct 13, 2009
- Texas Instruments Incorporated
- Luigi Colombo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reliable high voltage gate dielectric layers using a dual nitridati...
- Patent number 7,560,792
- Issue date Jul 14, 2009
- Texas Instruments Incorporated
- Rajesh Khamankar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS TO ENHANCE EFFECTIVE WORK FUNCTION OF MID-GAP METAL BY INCO...
- Publication number 20170301774
- Publication date Oct 19, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE
- Publication number 20160336422
- Publication date Nov 17, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO ENHANCE EFFECTIVE WORK FUNCTION OF MID-GAP METAL BY INCO...
- Publication number 20160042953
- Publication date Feb 11, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...
- Publication number 20150311126
- Publication date Oct 29, 2015
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE
- Publication number 20140183653
- Publication date Jul 3, 2014
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...
- Publication number 20140120668
- Publication date May 1, 2014
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE CMOS WITH SE...
- Publication number 20130337656
- Publication date Dec 19, 2013
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SION GATE DIELECTRIC WITH PORTIONS H...
- Publication number 20130228879
- Publication date Sep 5, 2013
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph CHAMBERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROG...
- Publication number 20130221451
- Publication date Aug 29, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Setting a Work Function of a Fully Silicided Semiconducto...
- Publication number 20120231590
- Publication date Sep 13, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Luigi COLOMBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATED USING A METAL MICROSTRUCTURE CONTRO...
- Publication number 20120164820
- Publication date Jun 28, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Luigi COLOMBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROG...
- Publication number 20120032280
- Publication date Feb 9, 2012
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SION GATE DIELECTRIC WITH PORTIONS H...
- Publication number 20110204454
- Publication date Aug 25, 2011
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to Enhance Effective Work Function of Mid-Gap Metal by Inco...
- Publication number 20110207314
- Publication date Aug 25, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Setting a Work Function of a Fully Silicided Semiconducto...
- Publication number 20110111586
- Publication date May 12, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Luigi COLOMBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE TRANSISTOR WITH REVERSE SHALLOW TRENCH ISOLATION
- Publication number 20100323486
- Publication date Dec 23, 2010
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Setting a Work Function of a Fully Silicided Semiconducto...
- Publication number 20100187613
- Publication date Jul 29, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Luigi COLOMBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATION OF REPLACEMENT GATE IN CMOS FLOW
- Publication number 20100164008
- Publication date Jul 1, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Freidoon Mehrad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-CONTAMINATION CONTROL FOR PROCESSING OF CIRCUITS COMPRISING M...
- Publication number 20100167517
- Publication date Jul 1, 2010
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO STEP METHOD TO CREATE A GATE ELECTRODE USING A PHYSICAL VAPOR D...
- Publication number 20100155860
- Publication date Jun 24, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to Enhance Effective Work Function of Mid-Gap Metal by Inco...
- Publication number 20100127335
- Publication date May 27, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...
- Publication number 20100127336
- Publication date May 27, 2010
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph CHAMBERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Maximize Nitrogen Concentration at the Top Surface of Gat...
- Publication number 20100078738
- Publication date Apr 1, 2010
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph CHAMBERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE POLYSILICON OXIDE PROCESS FOR HIGH-K DIELECTRIC/MET...
- Publication number 20090170346
- Publication date Jul 2, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WORK FUNCTION CMOS DEVICES UTILIZING CARBIDE BASED ELECTRODES
- Publication number 20090068828
- Publication date Mar 12, 2009
- TEXAS INSTRUMENTS INCORPORATED
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SETTING A WORK FUNCTION OF A FULLY SILICIDED SEMICONDUCTO...
- Publication number 20090053883
- Publication date Feb 26, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Luigi COLOMBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR A TRIPLE-GATE TRANSISTOR WITH REVERSE STI
- Publication number 20080268599
- Publication date Oct 30, 2008
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW
- Publication number 20080246099
- Publication date Oct 9, 2008
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE ELECTRODES B...
- Publication number 20080157228
- Publication date Jul 3, 2008
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-gate MOSFET device with lithography independnet silicon bo...
- Publication number 20080142890
- Publication date Jun 19, 2008
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS

James J. Chambers

Person

Patents Grantslast 30 patents

Methods to enhance effective work function of mid-gap metal by inco...

High-K metal gate

Methods to enhance effective work function of mid-gap metal by inco...

High-K metal gate

Structure and method for metal gate stack oxygen concentration cont...

Methods to enhance effective work function of mid-gap metal by inco...

Structure and method for metal gate stack oxygen concentration cont...

Semiconductor device including SiON gate dielectric with portions h...

MOS transistors including SiON gate dielectric with enhanced nitrog...

Method for dual work function metal gate CMOS with selective capping

Structure and method for metal gate stack oxygen concentration cont...

Semiconductor device fabricated using a metal microstructure contro...

Method of forming MOS transistors including SiON gate dielectric wi...

Semiconductor device including SiON gate dielectric with portions h...

Triple-gate transistor with reverse shallow trench isolation

Method to maximize nitrogen concentration at the top surface of gat...

Semiconductor device fabricated using a metal microstructure contro...

Method for integration of replacement gate in CMOS flow

Cross-contamination control for processing of circuits comprising M...

Methods to enhance effective work function of mid-gap metal by inco...

Dual work function CMOS devices utilizing carbide based electrodes

Formation of uniform silicate gate dielectrics

Low temperature polysilicon oxide process for high-K dielectric/met...

Structure and method for a triple-gate transistor with reverse STI

Semiconductor CMOS devices and methods with NMOS high-k dielectric...

Methods and systems to mitigate etch stop clipping for shallow tren...

Structure for dual work function metal gate electrodes by control o...

Work function control of metals

Defect control in gate dielectrics

Reliable high voltage gate dielectric layers using a dual nitridati...

Patents Applicationslast 30 patents

METHODS TO ENHANCE EFFECTIVE WORK FUNCTION OF MID-GAP METAL BY INCO...

HIGH-K METAL GATE

METHODS TO ENHANCE EFFECTIVE WORK FUNCTION OF MID-GAP METAL BY INCO...

STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...

HIGH-K METAL GATE

STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...

STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE CMOS WITH SE...

SEMICONDUCTOR DEVICE INCLUDING SION GATE DIELECTRIC WITH PORTIONS H...

MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROG...

Method of Setting a Work Function of a Fully Silicided Semiconducto...

SEMICONDUCTOR DEVICE FABRICATED USING A METAL MICROSTRUCTURE CONTRO...

MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROG...

SEMICONDUCTOR DEVICE INCLUDING SION GATE DIELECTRIC WITH PORTIONS H...

Methods to Enhance Effective Work Function of Mid-Gap Metal by Inco...

Method of Setting a Work Function of a Fully Silicided Semiconducto...

TRIPLE-GATE TRANSISTOR WITH REVERSE SHALLOW TRENCH ISOLATION

Method of Setting a Work Function of a Fully Silicided Semiconducto...

METHOD FOR INTEGRATION OF REPLACEMENT GATE IN CMOS FLOW

CROSS-CONTAMINATION CONTROL FOR PROCESSING OF CIRCUITS COMPRISING M...

TWO STEP METHOD TO CREATE A GATE ELECTRODE USING A PHYSICAL VAPOR D...

Methods to Enhance Effective Work Function of Mid-Gap Metal by Inco...

STRUCTURE AND METHOD FOR METAL GATE STACK OXYGEN CONCENTRATION CONT...

Method to Maximize Nitrogen Concentration at the Top Surface of Gat...

LOW TEMPERATURE POLYSILICON OXIDE PROCESS FOR HIGH-K DIELECTRIC/MET...

DUAL WORK FUNCTION CMOS DEVICES UTILIZING CARBIDE BASED ELECTRODES

METHOD OF SETTING A WORK FUNCTION OF A FULLY SILICIDED SEMICONDUCTO...

STRUCTURE AND METHOD FOR A TRIPLE-GATE TRANSISTOR WITH REVERSE STI

LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW

STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE ELECTRODES B...

Multiple-gate MOSFET device with lithography independnet silicon bo...