James M. Daughton

Person

Saint Louis Park, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Circuit selection of magnetic memory cells and related cell structures
- Patent number RE47583
- Issue date Aug 27, 2019
- NVE Corporation
- James M. Daughton
Information Patent Grant
Inverted magnetic isolator
- Patent number 8,884,606
- Issue date Nov 11, 2014
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Grant
Current switched magnetoresistive memory cell
- Patent number RE44878
- Issue date May 6, 2014
- NVE Corporation
- James M. Daughton
- 257 - Active solid-state devices
Information Patent Grant
Inverted magnetic isolator
- Patent number 7,952,345
- Issue date May 31, 2011
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,813,165
- Issue date Oct 12, 2010
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Superparamagnetic platelets field sensing devices
- Patent number 7,660,081
- Issue date Feb 9, 2010
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Inverted magnetic isolator
- Patent number 7,557,562
- Issue date Jul 7, 2009
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Grant
Enclosure tamper detection and protection
- Patent number 7,468,664
- Issue date Dec 23, 2008
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin dependent tunneling devices having reduced topological coupling
- Patent number 7,390,584
- Issue date Jun 24, 2008
- NVE Corporation
- James M. Daughton
- G01 - MEASURING TESTING
Information Patent Grant
Superparamagnetic field sensing device
- Patent number 7,355,822
- Issue date Apr 8, 2008
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,266,013
- Issue date Sep 4, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
magnetic memory layers thermal pulse transitions
- Patent number 7,177,178
- Issue date Feb 13, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory SOI cell
- Patent number 7,148,531
- Issue date Dec 12, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Superparamagnetic field sensing devices
- Patent number 7,054,118
- Issue date May 30, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,023,723
- Issue date Apr 4, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally operated switch control memory cell
- Patent number 6,963,098
- Issue date Nov 8, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field sensor with augmented magnetoresistive sensing layer
- Patent number 6,872,467
- Issue date Mar 29, 2005
- NVE Corporation
- Zhenghong Qian
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiparallel magnetoresistive memory cells
- Patent number 6,777,730
- Issue date Aug 17, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Current switched magnetoresistive memory cell
- Patent number 6,744,086
- Issue date Jun 1, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic devices using nanocomposite materials
- Patent number 6,713,195
- Issue date Mar 30, 2004
- NVE Corporation
- Dexin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit selection of magnetic memory cells and related cell structures
- Patent number 6,538,921
- Issue date Mar 25, 2003
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory coincident thermal pulse data storage
- Patent number 6,535,416
- Issue date Mar 18, 2003
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Uniform sense condition magnetic field sensor using differential ma...
- Patent number 6,462,541
- Issue date Oct 8, 2002
- NVE Corporation
- Dexin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
GMR high current, wide dynamic range sensor
- Patent number 6,429,640
- Issue date Aug 6, 2002
- The United States of America as represented by the Secretary of the Air Force
- James Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Read heads in planar monolithic integrated circuit chips
- Patent number 6,404,191
- Issue date Jun 11, 2002
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,349,053
- Issue date Feb 19, 2002
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field sensor with a plurality of magnetoresistive thin-fil...
- Patent number 6,340,886
- Issue date Jan 22, 2002
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic digital signal coupler having selected/reversal directions...
- Patent number 6,300,617
- Issue date Oct 9, 2001
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- G01 - MEASURING TESTING
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,275,411
- Issue date Aug 14, 2001
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic structure with stratified layers
- Patent number 6,168,860
- Issue date Jan 2, 2001
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
INVERTED MAGNETIC ISOLATOR
- Publication number 20110199073
- Publication date Aug 18, 2011
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Application
Inverted magnetic isolator
- Publication number 20090251131
- Publication date Oct 8, 2009
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Application
Superparamagnetic field sensing devices
- Publication number 20080123222
- Publication date May 29, 2008
- NVE Corporation
- James M. Daughton
- A45 - HAND OR TRAVELLING ARTICLES
Information Patent Application
Enclosure tamper detection and protection
- Publication number 20080042834
- Publication date Feb 21, 2008
- NVE Corporation
- James M. Daughton
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20070268743
- Publication date Nov 22, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20070109842
- Publication date May 17, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Superparamagnetic field sensing devices
- Publication number 20060139028
- Publication date Jun 29, 2006
- NVE Corporation
- James M. Daughton
- A45 - HAND OR TRAVELLING ARTICLES
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20060083056
- Publication date Apr 20, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Inverted magnetic isolator
- Publication number 20060061350
- Publication date Mar 23, 2006
- NVE Corporation
- John K. Myers
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive memory SOI cell
- Publication number 20050242382
- Publication date Nov 3, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Thermally operated switch control memory cell
- Publication number 20050002267
- Publication date Jan 6, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20040125673
- Publication date Jul 1, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic field sensor with augmented magnetoresistive sensing layer
- Publication number 20040115478
- Publication date Jun 17, 2004
- NVE Corporation
- Zhenghong Qian
- G01 - MEASURING TESTING
Information Patent Application
Superparamagnetic devices
- Publication number 20040023065
- Publication date Feb 5, 2004
- NVE Corporation
- James M. Daughton
- A45 - HAND OR TRAVELLING ARTICLES
Information Patent Application
Spin dependent tunneling devices having reduced topological coupling
- Publication number 20040013880
- Publication date Jan 22, 2004
- NVE Corporation
- James M. Daughton
- G01 - MEASURING TESTING
Information Patent Application
Antiparallel magnetoresistive memory cells
- Publication number 20030048676
- Publication date Mar 13, 2003
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Current switched magnetoresistive memory cell
- Publication number 20030007398
- Publication date Jan 9, 2003
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic devices using nanocomposite materials
- Publication number 20020146580
- Publication date Oct 10, 2002
- NVE Corporation
- Dexin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Circuit selection of magnetic memory cells and related cell structures
- Publication number 20020036919
- Publication date Mar 28, 2002
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Read heads in planar monolithic integrated circuit chips
- Publication number 20010017543
- Publication date Aug 30, 2001
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY

James M. Daughton

Person

Patents Grantslast 30 patents

Circuit selection of magnetic memory cells and related cell structures

Inverted magnetic isolator

Current switched magnetoresistive memory cell

Inverted magnetic isolator

Magnetic memory layers thermal pulse transitions

Superparamagnetic platelets field sensing devices

Inverted magnetic isolator

Enclosure tamper detection and protection

Spin dependent tunneling devices having reduced topological coupling

Superparamagnetic field sensing device

Magnetic memory layers thermal pulse transitions

magnetic memory layers thermal pulse transitions

Magnetoresistive memory SOI cell

Superparamagnetic field sensing devices

Magnetic memory layers thermal pulse transitions

Thermally operated switch control memory cell

Magnetic field sensor with augmented magnetoresistive sensing layer

Antiparallel magnetoresistive memory cells

Current switched magnetoresistive memory cell

Magnetic devices using nanocomposite materials

Circuit selection of magnetic memory cells and related cell structures

Magnetic memory coincident thermal pulse data storage

Uniform sense condition magnetic field sensor using differential ma...

GMR high current, wide dynamic range sensor

Read heads in planar monolithic integrated circuit chips

Spin dependent tunneling memory

Magnetic field sensor with a plurality of magnetoresistive thin-fil...

Magnetic digital signal coupler having selected/reversal directions...

Spin dependent tunneling memory

Magnetic structure with stratified layers

Patents Applicationslast 30 patents

INVERTED MAGNETIC ISOLATOR

Inverted magnetic isolator

Superparamagnetic field sensing devices

Enclosure tamper detection and protection

Magnetic memory layers thermal pulse transitions

Magnetic memory layers thermal pulse transitions

Superparamagnetic field sensing devices

Magnetic memory layers thermal pulse transitions

Inverted magnetic isolator

Magnetoresistive memory SOI cell

Thermally operated switch control memory cell

Magnetic memory layers thermal pulse transitions

Magnetic field sensor with augmented magnetoresistive sensing layer

Superparamagnetic devices

Spin dependent tunneling devices having reduced topological coupling

Antiparallel magnetoresistive memory cells

Current switched magnetoresistive memory cell

Magnetic devices using nanocomposite materials

Circuit selection of magnetic memory cells and related cell structures

Read heads in planar monolithic integrated circuit chips