James R. Grandusky

Person

Waterford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
- Patent number 12,163,250
- Issue date Dec 10, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Aluminum nitride single crystals having controllable color and meth...
- Patent number 11,840,773
- Issue date Dec 12, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
- Patent number 11,555,256
- Issue date Jan 17, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photon extraction from ultraviolet light-emitting devices
- Patent number 11,515,455
- Issue date Nov 29, 2022
- Crystal IS, Inc.
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage seeded growth of large aluminum nitride single crystals
- Patent number 11,384,449
- Issue date Jul 12, 2022
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride substrate removal for ultraviolet light-emitting d...
- Patent number 11,355,664
- Issue date Jun 7, 2022
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic electronic and optoelectronic devices having planar c...
- Patent number 11,251,330
- Issue date Feb 15, 2022
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,168,411
- Issue date Nov 9, 2021
- Crystal IS, Inc.
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photon extraction from nitride ultraviolet light-emitting devices
- Patent number 10,971,665
- Issue date Apr 6, 2021
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photon extraction from ultraviolet light-emitting devices
- Patent number 10,854,797
- Issue date Dec 1, 2020
- CRYSTALIS, INC.
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride substrate removal for ultraviolet light-emitting d...
- Patent number 10,756,234
- Issue date Aug 25, 2020
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light-emitting devices incorporating graded layers and...
- Patent number 10,700,237
- Issue date Jun 30, 2020
- Crystal IS, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage seeded growth of large aluminum nitride single crystals
- Patent number 10,612,156
- Issue date Apr 7, 2020
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photon extraction from nitride ultraviolet light-emitting devices
- Patent number 10,615,322
- Issue date Apr 7, 2020
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 10,446,391
- Issue date Oct 15, 2019
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage seeded growth of large aluminum nitride single crystals
- Patent number 10,407,798
- Issue date Sep 10, 2019
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photon extraction from ultraviolet light-emitting devices
- Patent number 10,347,805
- Issue date Jul 9, 2019
- Crystal IS, Inc.
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light-emitting devices incorporating graded layers and...
- Patent number 10,211,368
- Issue date Feb 19, 2019
- Crystal IS, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light-emitting devices incorporating two-dimensional ho...
- Patent number 10,211,369
- Issue date Feb 19, 2019
- Crystal IS, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photon extraction from nitride ultraviolet light-emitting devices
- Patent number 10,074,784
- Issue date Sep 11, 2018
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photon extraction from ultraviolet light-emitting devices
- Patent number 9,935,247
- Issue date Apr 3, 2018
- Crystal IS, Inc.
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light-emitting devices incorporating graded layers and...
- Patent number 9,806,227
- Issue date Oct 31, 2017
- Crystal IS, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light-emitting devices incorporating two-dimensional ho...
- Patent number 9,680,057
- Issue date Jun 13, 2017
- Crystal IS, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic electronic and optoelectronic devices having planar c...
- Patent number 9,620,676
- Issue date Apr 11, 2017
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 9,437,430
- Issue date Sep 6, 2016
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic electronic and optoelectronic devices having planar c...
- Patent number 9,299,880
- Issue date Mar 29, 2016
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photon extraction from nitride ultraviolet light-emitting devices
- Patent number 8,962,359
- Issue date Feb 24, 2015
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 8,080,833
- Issue date Dec 20, 2011
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS
- Publication number 20250051963
- Publication date Feb 13, 2025
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...
- Publication number 20230183883
- Publication date Jun 15, 2023
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...
- Publication number 20220074072
- Publication date Mar 10, 2022
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20210111317
- Publication date Apr 15, 2021
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE SUBSTRATE REMOVAL FOR ULTRAVIOLET LIGHT-EMITTING D...
- Publication number 20200411716
- Publication date Dec 31, 2020
- James R. GRANDUSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20200321498
- Publication date Oct 8, 2020
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS
- Publication number 20200283926
- Publication date Sep 10, 2020
- Leo J. SCHOWALTER
- C30 - CRYSTAL GROWTH
Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20200058491
- Publication date Feb 20, 2020
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS
- Publication number 20200010975
- Publication date Jan 9, 2020
- Leo J. SCHOWALTER
- C30 - CRYSTAL GROWTH
Information Patent Application
IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...
- Publication number 20190382916
- Publication date Dec 19, 2019
- Robert T. BONDOKOV
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...
- Publication number 20190382919
- Publication date Dec 19, 2019
- Robert T. BONDOKOV
- C30 - CRYSTAL GROWTH
Information Patent Application
PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20190348581
- Publication date Nov 14, 2019
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...
- Publication number 20190214527
- Publication date Jul 11, 2019
- Craig MOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20190035992
- Publication date Jan 31, 2019
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS
- Publication number 20180363164
- Publication date Dec 20, 2018
- Leo J. SCHOWALTER
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE SUBSTRATE REMOVAL FOR ULTRAVIOLET LIGHT-EMITTING D...
- Publication number 20180331253
- Publication date Nov 15, 2018
- James R. GRANDUSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20180190883
- Publication date Jul 5, 2018
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...
- Publication number 20170309781
- Publication date Oct 26, 2017
- Craig MOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING TWO-DIMENSIONAL HO...
- Publication number 20170309782
- Publication date Oct 26, 2017
- Craig MOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...
- Publication number 20170179336
- Publication date Jun 22, 2017
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...
- Publication number 20170084780
- Publication date Mar 23, 2017
- Craig MOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING TWO-DIMENSIONAL HO...
- Publication number 20170084779
- Publication date Mar 23, 2017
- Craig MOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...
- Publication number 20160225949
- Publication date Aug 4, 2016
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20160181487
- Publication date Jun 23, 2016
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20160027975
- Publication date Jan 28, 2016
- Ken Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING PLANAR CONTACTS TO PSEUDOMORPHIC ELECTRONIC AND...
- Publication number 20150280057
- Publication date Oct 1, 2015
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...
- Publication number 20140264263
- Publication date Sep 18, 2014
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES
- Publication number 20140203311
- Publication date Jul 24, 2014
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20120104355
- Publication date May 3, 2012
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20100264460
- Publication date Oct 21, 2010
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS

James R. Grandusky

Person

Patents Grantslast 30 patents

Control of basal plane dislocations in large aluminum nitride crystals

Impurity control during formation of aluminum nitride crystals and...

Aluminum nitride single crystals having controllable color and meth...

Aluminum nitride crystals having low urbach energy and high transpa...

Photon extraction from ultraviolet light-emitting devices

Two-stage seeded growth of large aluminum nitride single crystals

Aluminum nitride substrate removal for ultraviolet light-emitting d...

Pseudomorphic electronic and optoelectronic devices having planar c...

Impurity control during formation of aluminum nitride crystals and...

Photon extraction from nitride ultraviolet light-emitting devices

Photon extraction from ultraviolet light-emitting devices

Aluminum nitride substrate removal for ultraviolet light-emitting d...

Ultraviolet light-emitting devices incorporating graded layers and...

Two-stage seeded growth of large aluminum nitride single crystals

Photon extraction from nitride ultraviolet light-emitting devices

Thick pseudomorphic nitride epitaxial layers

Two-stage seeded growth of large aluminum nitride single crystals

Photon extraction from ultraviolet light-emitting devices

Ultraviolet light-emitting devices incorporating graded layers and...

Ultraviolet light-emitting devices incorporating two-dimensional ho...

Photon extraction from nitride ultraviolet light-emitting devices

Photon extraction from ultraviolet light-emitting devices

Ultraviolet light-emitting devices incorporating graded layers and...

Ultraviolet light-emitting devices incorporating two-dimensional ho...

Pseudomorphic electronic and optoelectronic devices having planar c...

Thick pseudomorphic nitride epitaxial layers

Pseudomorphic electronic and optoelectronic devices having planar c...

Photon extraction from nitride ultraviolet light-emitting devices

Thick pseudomorphic nitride epitaxial layers

Patents Applicationslast 30 patents

CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS

ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...

IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...

PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES

ALUMINUM NITRIDE SUBSTRATE REMOVAL FOR ULTRAVIOLET LIGHT-EMITTING D...

PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES

TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS

TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS

IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND...

ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPA...

PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES

ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...

PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES

TWO-STAGE SEEDED GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS

ALUMINUM NITRIDE SUBSTRATE REMOVAL FOR ULTRAVIOLET LIGHT-EMITTING D...

PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES

ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...

ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING TWO-DIMENSIONAL HO...

PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...

ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND...

ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING TWO-DIMENSIONAL HO...

PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...

PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES

PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES

METHODS OF FORMING PLANAR CONTACTS TO PSEUDOMORPHIC ELECTRONIC AND...

PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR C...

PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS