James Reed

Person

Auburn Hills, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,570,163
- Issue date Feb 14, 2017
- OVONYX MEMORY TECHNOLOGY, LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,251,895
- Issue date Feb 2, 2016
- Carlow Innovations LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,036,409
- Issue date May 19, 2015
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,861,293
- Issue date Oct 14, 2014
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,634,226
- Issue date Jan 21, 2014
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Ovonic threshold switch film composition for TSLAGS material
- Patent number 8,148,707
- Issue date Apr 3, 2012
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 7,990,761
- Issue date Aug 2, 2011
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150206581
- Publication date Jul 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150109857
- Publication date Apr 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140328121
- Publication date Nov 6, 2014
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140098604
- Publication date Apr 10, 2014
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20110240943
- Publication date Oct 6, 2011
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory and method of making same
- Publication number 20100283029
- Publication date Nov 11, 2010
- Charles Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL
- Publication number 20100163822
- Publication date Jul 1, 2010
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method for manufacturing Chalcogenide devices
- Publication number 20090298222
- Publication date Dec 3, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Immunity of phase change material to disturb in the amorphous phase
- Publication number 20090244962
- Publication date Oct 1, 2009
- George Gordon
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Ovonic threshold switch film composition for TSLAGS material

Immunity of phase change material to disturb in the amorphous phase

Patents Applicationslast 30 patents

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Programmable resistance memory and method of making same

OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL

Method for manufacturing Chalcogenide devices

Immunity of phase change material to disturb in the amorphous phase