James W. Cook Jr.

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride semiconductor structures comprising low atomic mass spe...
- Patent number 10,211,294
- Issue date Feb 19, 2019
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation via reaction with active species
- Patent number 9,704,705
- Issue date Jul 11, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation in III-nitride material semiconductor...
- Patent number 9,627,473
- Issue date Apr 18, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,569,871
- Issue date Aug 4, 2009
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,352,016
- Issue date Apr 1, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES
- Publication number 20190013196
- Publication date Jan 10, 2019
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...
- Publication number 20170069742
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...
- Publication number 20170069713
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING LOW ATOMIC MASS SPE...
- Publication number 20170069720
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING
- Publication number 20170069744
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES
- Publication number 20170069484
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20080246058
- Publication date Oct 9, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20070120147
- Publication date May 31, 2007
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20050167775
- Publication date Aug 4, 2005
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material structures including isolation regions and...
- Publication number 20050145851
- Publication date Jul 7, 2005
- Nitronex Corporation
- Jerry W. Johnson
- H01 - BASIC ELECTRIC ELEMENTS

James W. Cook Jr.

Person

Patents Grantslast 30 patents

III-nitride semiconductor structures comprising low atomic mass spe...

Parasitic channel mitigation via reaction with active species

Parasitic channel mitigation in III-nitride material semiconductor...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material transistors and methods associated with th...

Patents Applicationslast 30 patents

PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES

PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...

PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING LOW ATOMIC MASS SPE...

PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING

PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including isolation regions and...