James Yong Meng LEE

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming shallow trench isolation structures for integrate...
- Patent number 8,178,417
- Issue date May 15, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shailendra Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 8,143,651
- Issue date Mar 27, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure and method for fabrication thereof
- Patent number 7,999,300
- Issue date Aug 16, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Zhao Lun
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 7,767,577
- Issue date Aug 3, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application of single exposure alternating aperture phase shift mas...
- Patent number 7,037,791
- Issue date May 2, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Lay Cheng Choo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20100301424
- Publication date Dec 2, 2010
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE AND METHOD FOR FABRICATION THEREOF
- Publication number 20100187587
- Publication date Jul 29, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Zhao LUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE TRANSISTORS
- Publication number 20100102393
- Publication date Apr 29, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- James Yong Meng LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURES FOR INTEGRATE...
- Publication number 20090261448
- Publication date Oct 22, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Shailendra MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20090206408
- Publication date Aug 20, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Application of single exposure alternating aperture phase shift mas...
- Publication number 20030203580
- Publication date Oct 30, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Lay Cheng Choo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form very high mobility vertical channel transistor by se...
- Publication number 20020098655
- Publication date Jul 25, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Jia Zhen Zheng
- H01 - BASIC ELECTRIC ELEMENTS

James Yong Meng LEE

Person

Patents Grantslast 30 patents

Method of forming shallow trench isolation structures for integrate...

Nested and isolated transistors with reduced impedance difference

Memory cell structure and method for fabrication thereof

Nested and isolated transistors with reduced impedance difference

Application of single exposure alternating aperture phase shift mas...

Patents Applicationslast 30 patents

NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE

MEMORY CELL STRUCTURE AND METHOD FOR FABRICATION THEREOF

METAL GATE TRANSISTORS

METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURES FOR INTEGRATE...

NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE

Application of single exposure alternating aperture phase shift mas...

Method to form very high mobility vertical channel transistor by se...