Jan Fuhrmann

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Rostock, DE

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with insulated gate transistor cell and rectif...
- Patent number 11,588,048
- Issue date Feb 21, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operating a bipolar transistor having an insulated gate electrode
- Patent number 11,211,923
- Issue date Dec 28, 2021
- Siemens Aktiengesellschaft
- Hans-Günther Eckel
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Electronic circuit with a half-bridge circuit and a voltage clampin...
- Patent number 10,680,523
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Jan Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPERATING A BIPOLAR TRANSISTOR HAVING AN INSULATED GATE ELECTRODE
- Publication number 20210313978
- Publication date Oct 7, 2021
- SIEMENS AKTIENGESELLSCHAFT
- HANS-GÜNTHER ECKEL
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE WITH INSULATED GATE TRANSISTOR CELL AND RECTIF...
- Publication number 20210273088
- Publication date Sep 2, 2021
- INFINEON TECHNOLOGIES AG
- Thomas BASLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT WITH A HALF-BRIDGE CIRCUIT AND A VOLTAGE CLAMPIN...
- Publication number 20190044446
- Publication date Feb 7, 2019
- Infineon Technologies Austria AG
- Jan Fuhrmann
- H03 - BASIC ELECTRONIC CIRCUITRY