Jan Ropohl

Person

Regensburg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride device having an ohmic contact
- Patent number 11,728,389
- Issue date Aug 15, 2023
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride device and method of fabricating an ohmic contact...
- Patent number 11,302,783
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including an LDMOS t...
- Patent number 10,629,727
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor structure and method of manufacture
- Patent number 10,304,789
- Issue date May 28, 2019
- Infineon Technologies AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a LDMOS transistor and method
- Patent number 10,050,139
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a LDMOS transistor, monolithic micro...
- Patent number 10,020,270
- Issue date Jul 10, 2018
- Infineon Technologies AG
- Helmut Brech
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 8,362,551
- Issue date Jan 29, 2013
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench field plate including first and se...
- Patent number 8,044,459
- Issue date Oct 25, 2011
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating gate electrodes in a field plate trench tran...
- Patent number 7,060,562
- Issue date Jun 13, 2006
- Infineon Technologies AG
- Ralf Henninger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE
- Publication number 20240030334
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE HAVING AN OHMIC CONTACT
- Publication number 20220208972
- Publication date Jun 30, 2022
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Device and Method of Fabricating an Ohmic Contact...
- Publication number 20200168709
- Publication date May 28, 2020
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Including an LDMOS T...
- Publication number 20180350981
- Publication date Dec 6, 2018
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Transistor Structure and Method of Manufacture
- Publication number 20180277501
- Publication date Sep 27, 2018
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Device Including a LDMOS Transistor, Monolithic Micro...
- Publication number 20180090455
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCT...
- Publication number 20120025303
- Publication date Feb 2, 2012
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCT...
- Publication number 20100117144
- Publication date May 13, 2010
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating gate electrodes in a field plate trench tran...
- Publication number 20050215010
- Publication date Sep 29, 2005
- Infineon Technologies AG
- Ralf Henninger
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Group III nitride device having an ohmic contact

Group III nitride device and method of fabricating an ohmic contact...

Method of manufacturing a semiconductor device including an LDMOS t...

LDMOS transistor structure and method of manufacture

Semiconductor device including a LDMOS transistor and method

Semiconductor device including a LDMOS transistor, monolithic micro...

Semiconductor device

Semiconductor device with trench field plate including first and se...

Method for fabricating gate electrodes in a field plate trench tran...

Patents Applicationslast 30 patents

GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE

GROUP III NITRIDE DEVICE HAVING AN OHMIC CONTACT

Group III Nitride Device and Method of Fabricating an Ohmic Contact...

Method of Manufacturing a Semiconductor Device Including an LDMOS T...

LDMOS Transistor Structure and Method of Manufacture

Semiconductor Device Including a LDMOS Transistor, Monolithic Micro...

SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCT...

SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCT...

Method for fabricating gate electrodes in a field plate trench tran...