Janardhanan S. Ajit

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,828,631
- Issue date Dec 7, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,800,903
- Issue date Oct 5, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with buried conduction r...
- Patent number 6,787,437
- Issue date Sep 7, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,777,749
- Issue date Aug 17, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,768,172
- Issue date Jul 27, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with buried conduction r...
- Patent number 6,724,041
- Issue date Apr 20, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,639,277
- Issue date Oct 28, 2003
- Power Integrations, Inc.
- Valdimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,633,065
- Issue date Oct 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,570,219
- Issue date May 27, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD structure for IC with over-voltage capability at pad in steady-...
- Patent number 6,424,510
- Issue date Jul 23, 2002
- Exar Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slew-rate-control structure for high-frequency operation
- Patent number 6,359,484
- Issue date Mar 19, 2002
- Exar Corporation
- Janardhanan S. Ajit
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low-power integrated circuit I/O buffer
- Patent number 6,313,671
- Issue date Nov 6, 2001
- Exar Corporation
- Hung Pham Le
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Over-voltage tolerant integrated circuit I/O buffer
- Patent number 6,313,672
- Issue date Nov 6, 2001
- Exar Corporation
- Janardhanan S. Ajit
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High band gap layer to isolate wells in high voltage power integrat...
- Patent number 6,310,385
- Issue date Oct 30, 2001
- International Rectifier Corp.
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,207,994
- Issue date Mar 27, 2001
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with multiple lateral co...
- Patent number 6,168,983
- Issue date Jan 2, 2001
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Emitter-switched transistor structures
- Patent number 5,910,664
- Issue date Jun 8, 1999
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 5,877,515
- Issue date Mar 2, 1999
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base resistance controlled thyristor structure with high-density la...
- Patent number 5,793,066
- Issue date Aug 11, 1998
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced mask process for manufacture of MOS gated devices using dop...
- Patent number 5,783,474
- Issue date Jul 21, 1998
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional thyristor with MOS turn-off capability with a single...
- Patent number 5,757,033
- Issue date May 26, 1998
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Emitter switched thyristor
- Patent number 5,757,034
- Issue date May 26, 1998
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-terminal MOS-gate controlled thyristor structures with curren...
- Patent number 5,719,411
- Issue date Feb 17, 1998
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional thyristor with MOS turn-on and turn-off capability
- Patent number 5,629,535
- Issue date May 13, 1997
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-gated power semiconductor devices with conductivity modulation...
- Patent number 5,623,151
- Issue date Apr 22, 1997
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench depletion MOSFET
- Patent number 5,581,100
- Issue date Dec 3, 1996
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for mosgated device with reduced mask count a...
- Patent number 5,557,127
- Issue date Sep 17, 1996
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-controlled thyristor with current saturation characteristics
- Patent number 5,498,884
- Issue date Mar 12, 1996
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional thyristor with MOS turn-off capability with a single...
- Patent number 5,483,087
- Issue date Jan 9, 1996
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced mask process for manufacture of MOS gated devices
- Patent number 5,474,946
- Issue date Dec 12, 1995
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH MULTI-LAYER CONDUCTION REGION
- Publication number 20040207012
- Publication date Oct 21, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030151093
- Publication date Aug 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030151101
- Publication date Aug 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a high-voltage transistor with buried conduction r...
- Publication number 20030042541
- Publication date Mar 6, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030025155
- Publication date Feb 6, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A HIGH-VOLTAGE TRANSISTOR WITH BURIED CONDUCTION R...
- Publication number 20020153556
- Publication date Oct 24, 2002
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20020050613
- Publication date May 2, 2002
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High band gap layer to isolate wells in high voltage power integrat...
- Publication number 20010045615
- Publication date Nov 29, 2001
- International Rectifier Corporation
- Janardhanan S. Ajit
- H01 - BASIC ELECTRIC ELEMENTS

Janardhanan S. Ajit

Person

Patents Grantslast 30 patents

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

ESD structure for IC with over-voltage capability at pad in steady-...

Slew-rate-control structure for high-frequency operation

Low-power integrated circuit I/O buffer

Over-voltage tolerant integrated circuit I/O buffer

High band gap layer to isolate wells in high voltage power integrat...

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with multiple lateral co...

Emitter-switched transistor structures

SiC semiconductor device

Base resistance controlled thyristor structure with high-density la...

Reduced mask process for manufacture of MOS gated devices using dop...

Bidirectional thyristor with MOS turn-off capability with a single...

Emitter switched thyristor

Three-terminal MOS-gate controlled thyristor structures with curren...

Bidirectional thyristor with MOS turn-on and turn-off capability

MOS-gated power semiconductor devices with conductivity modulation...

Trench depletion MOSFET

Termination structure for mosgated device with reduced mask count a...

MOS-controlled thyristor with current saturation characteristics

Bidirectional thyristor with MOS turn-off capability with a single...

Reduced mask process for manufacture of MOS gated devices

Patents Applicationslast 30 patents

HIGH-VOLTAGE TRANSISTOR WITH MULTI-LAYER CONDUCTION REGION

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

METHOD OF MAKING A HIGH-VOLTAGE TRANSISTOR WITH BURIED CONDUCTION R...

High-voltage transistor with multi-layer conduction region

High band gap layer to isolate wells in high voltage power integrat...