Janial Ramdani

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Scarborough, ME, US

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Patents Grantslast 30 patents

Information Patent Grant
High performance SiGe:C HBT with phosphorous atomic layer doping
- Patent number 8,115,196
- Issue date Feb 14, 2012
- National Semiconductor Corporation
- Janial Ramdani
- H01 - BASIC ELECTRIC ELEMENTS