Janis Virbulis

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Burghausen, DE

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Patents Grantslast 30 patents

Information Patent Grant
Process and apparatus for producing a silicon single crystal
- Patent number 7,771,530
- Issue date Aug 10, 2010
- Siltronic AG
- Janis Virbulis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Patent number 7,025,827
- Issue date Apr 11, 2006
- Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal produced by crucible-free float zone pulling
- Patent number 6,840,998
- Issue date Jan 11, 2005
- Siltronic AG
- Ludwig Altmannshofer
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and device for the production of a single crystal
- Patent number 6,238,477
- Issue date May 29, 2001
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and device for the production of a single crystal
- Patent number 6,132,507
- Issue date Oct 17, 2000
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Publication number 20030192470
- Publication date Oct 16, 2003
- Wacker Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal produced by crucible-free float zone pulling
- Publication number 20030024469
- Publication date Feb 6, 2003
- WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for producing a silicon single crystal
- Publication number 20020092461
- Publication date Jul 18, 2002
- Janis Virbulis
- C30 - CRYSTAL GROWTH