Janusz J. Nowak

Person

Highland Mills, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional funnel-like spin transfer torque MRAM cell with a...
- Patent number 11,917,835
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Janusz Jozef Nowak
Information Patent Grant
Inverted wide base double magnetic tunnel junction device
- Patent number 11,316,104
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction having tapered all-around structure
- Patent number 11,276,817
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Janusz Jozef Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer for magnetic random access memory
- Patent number 10,700,263
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined CMP and RIE contact scheme for MRAM applications
- Patent number 10,644,233
- Issue date May 5, 2020
- International Business Machines Corporation
- Michael F. Lofaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,424,727
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,326,074
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 10,256,397
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 10,243,138
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined CMP and RIE contact scheme for MRAM applications
- Patent number 10,236,443
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Michael F. Lofaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined CMP and RIE contact scheme for MRAM applications
- Patent number 10,014,464
- Issue date Jul 3, 2018
- International Business Machines Corporation
- Michael F. Lofaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 9,960,347
- Issue date May 1, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 9,793,471
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 9,705,071
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of memory array with epitaxially grown me...
- Patent number 9,478,736
- Issue date Oct 25, 2016
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque transfer MRAM device formed on silicon stud grown by se...
- Patent number 9,450,179
- Issue date Sep 20, 2016
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque transfer MRAM device formed on silicon stud grown by se...
- Patent number 9,373,783
- Issue date Jun 21, 2016
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 9,318,698
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 9,082,963
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-torque based memory device with read and write current paths m...
- Patent number 8,927,301
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 8,928,100
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with self-aligned epitaxially grown memory elements an...
- Patent number 8,901,529
- Issue date Dec 2, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic stacks with perpendicular magnetic anisotropy for spin mom...
- Patent number 8,866,207
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with synthetic antiferromagnetic stor...
- Patent number 8,852,762
- Issue date Oct 7, 2014
- International Business Machines Corporation
- David W. Abraham
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with synthetic antiferromagnetic stor...
- Patent number 8,852,677
- Issue date Oct 7, 2014
- International Business Machines Corporation
- David W. Abraham
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with self-aligned epitaxially grown memory elements an...
- Patent number 8,835,256
- Issue date Sep 16, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of memory array with epitaxially grown me...
- Patent number 8,828,743
- Issue date Sep 9, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-torque based memory device with read and write current paths m...
- Patent number 8,270,208
- Issue date Sep 18, 2012
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetically de-coupling magnetic memory cells and bit/word lines f...
- Patent number 7,782,660
- Issue date Aug 24, 2010
- International Business Machines Corporation
- Solomon Assefa
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for repairing a shorted tunnel device
- Patent number 7,505,337
- Issue date Mar 17, 2009
- International Business Machines Corporation
- Janusz Jozef Nowak
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL FUNNEL-LIKE SPIN TRANSFER TORQUE MRAM CELL WITH A...
- Publication number 20220199687
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Janusz Jozef Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20210288246
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING TAPERED ALL-AROUND STRUCTURE
- Publication number 20210288247
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Janusz Jozef Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED PERPENDICULAR MAGNETIC FREE LAYER STACK WITH A CRYSTALLIN...
- Publication number 20200106003
- Publication date Apr 2, 2020
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20190237659
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Anthony J. ANNUNZIATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20190221738
- Publication date Jul 18, 2019
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMBINED CMP AND RIE CONTACT SCHEME FOR MRAM APPLICATIONS
- Publication number 20180254410
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Michael F. Lofaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINED CMP AND RIE CONTACT SCHEME FOR MRAM APPLICATIONS
- Publication number 20180254411
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Michael F. Lofaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20180190900
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20180190901
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20170338407
- Publication date Nov 23, 2017
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20170229641
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20170148976
- Publication date May 25, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE TRANSFER MRAM DEVICE FORMED ON SILICON STUD GROWN BY SE...
- Publication number 20160248003
- Publication date Aug 25, 2016
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20160218281
- Publication date Jul 28, 2016
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20150236252
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20150087080
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH SELF-ALIGNED EPITAXIALLY GROWN MEMORY ELEMENTS AN...
- Publication number 20140273285
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FABRICATION OF MEMORY ARRAY WITH EPITAXIALLY GROWN ME...
- Publication number 20140264512
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FABRICATION OF MEMORY ARRAY WITH EPITAXIALLY GROWN ME...
- Publication number 20140273286
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH SELF-ALIGNED EPITAXIALLY GROWN MEMORY ELEMENTS AN...
- Publication number 20140264510
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STOR...
- Publication number 20140038309
- Publication date Feb 6, 2014
- International Business Machines Corporation
- David W. Abraham
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STOR...
- Publication number 20140037990
- Publication date Feb 6, 2014
- International Business Machines Corporation
- David W. Abraham
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOM...
- Publication number 20130005051
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER...
- Publication number 20130005052
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Guohan Hu
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120326250
- Publication date Dec 27, 2012
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...
- Publication number 20120288964
- Publication date Nov 15, 2012
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOM...
- Publication number 20120267733
- Publication date Oct 25, 2012
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER...
- Publication number 20120241878
- Publication date Sep 27, 2012
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...
- Publication number 20110194341
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE

Janusz J. Nowak

Person

Patents Grantslast 30 patents

Three-dimensional funnel-like spin transfer torque MRAM cell with a...

Inverted wide base double magnetic tunnel junction device

Magnetic tunnel junction having tapered all-around structure

Annealed seed layer for magnetic random access memory

Combined CMP and RIE contact scheme for MRAM applications

Spin transfer torque cell for magnetic random access memory

Spin transfer torque cell for magnetic random access memory

Structure and method to reduce shorting and process degradation in...

Structure and method to reduce shorting and process degradation in...

Combined CMP and RIE contact scheme for MRAM applications

Combined CMP and RIE contact scheme for MRAM applications

Structure and method to reduce shorting and process degradation in...

Spin transfer torque cell for magnetic random access memory

Structure and method to reduce shorting and process degradation in...

Structure and fabrication of memory array with epitaxially grown me...

Spin torque transfer MRAM device formed on silicon stud grown by se...

Spin torque transfer MRAM device formed on silicon stud grown by se...

Spin transfer torque cell for magnetic random access memory

Spin transfer torque cell for magnetic random access memory

Spin-torque based memory device with read and write current paths m...

Spin transfer torque cell for magnetic random access memory

Memory array with self-aligned epitaxially grown memory elements an...

Magnetic stacks with perpendicular magnetic anisotropy for spin mom...

Magnetic random access memory with synthetic antiferromagnetic stor...

Magnetic random access memory with synthetic antiferromagnetic stor...

Memory array with self-aligned epitaxially grown memory elements an...

Structure and fabrication of memory array with epitaxially grown me...

Spin-torque based memory device with read and write current paths m...

Magnetically de-coupling magnetic memory cells and bit/word lines f...

Method and apparatus for repairing a shorted tunnel device

Patents Applicationslast 30 patents

THREE-DIMENSIONAL FUNNEL-LIKE SPIN TRANSFER TORQUE MRAM CELL WITH A...

INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETIC TUNNEL JUNCTION HAVING TAPERED ALL-AROUND STRUCTURE

OPTIMIZED PERPENDICULAR MAGNETIC FREE LAYER STACK WITH A CRYSTALLIN...

ANNEALED SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

COMBINED CMP AND RIE CONTACT SCHEME FOR MRAM APPLICATIONS

COMBINED CMP AND RIE CONTACT SCHEME FOR MRAM APPLICATIONS

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

SPIN TORQUE TRANSFER MRAM DEVICE FORMED ON SILICON STUD GROWN BY SE...

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

MEMORY ARRAY WITH SELF-ALIGNED EPITAXIALLY GROWN MEMORY ELEMENTS AN...

STRUCTURE AND FABRICATION OF MEMORY ARRAY WITH EPITAXIALLY GROWN ME...

STRUCTURE AND FABRICATION OF MEMORY ARRAY WITH EPITAXIALLY GROWN ME...

MEMORY ARRAY WITH SELF-ALIGNED EPITAXIALLY GROWN MEMORY ELEMENTS AN...

MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STOR...

MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STOR...

MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOM...

MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER...

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...

MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOM...

MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER...

SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...