Jason Allen Janesky

Person

Gilbert, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 11,925,122
- Issue date Mar 5, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for monitoring and managing memory devices
- Patent number 11,798,646
- Issue date Oct 24, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...
- Patent number 11,744,161
- Issue date Aug 29, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked magnetoresistive structures and methods therefor
- Patent number 11,488,647
- Issue date Nov 1, 2022
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 11,139,429
- Issue date Oct 5, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures and methods for shielding magnetically sensitive components
- Patent number 11,088,317
- Issue date Aug 10, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Wenchin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determining bias configuration for write operations in memory to im...
- Patent number 10,923,170
- Issue date Feb 16, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...
- Patent number 10,897,008
- Issue date Jan 19, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...
- Patent number 10,707,410
- Issue date Jul 7, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 10,608,172
- Issue date Mar 31, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory using spin-orbit torque
- Patent number 10,600,460
- Issue date Mar 24, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Sarin Deshpande
- G11 - INFORMATION STORAGE
Information Patent Grant
Determining bias configuration for write operations in memory to im...
- Patent number 10,262,713
- Issue date Apr 16, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 10,230,046
- Issue date Mar 12, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing magnetoresistive MTJ stacks having an unpi...
- Patent number 10,199,571
- Issue date Feb 5, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures and methods for shielding magnetically sensitive components
- Patent number 9,954,163
- Issue date Apr 24, 2018
- EVERSPIN TECHNOLOGIES, INC.
- Wenchin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 9,893,275
- Issue date Feb 13, 2018
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti...
- Patent number 9,793,468
- Issue date Oct 17, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-reactive photoresist removal and spacer layer optimization in a...
- Patent number 9,595,665
- Issue date Mar 14, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Sarin A. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive structure having two dielectric layers, and method...
- Patent number 9,548,442
- Issue date Jan 17, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and testing for magnetoresistive memory to ensure lon...
- Patent number 9,543,041
- Issue date Jan 10, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
High temperature data retention in magnetoresistive random access m...
- Patent number 9,455,015
- Issue date Sep 27, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Jon Slaughter
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory element having a metal oxide tunnel barrier
- Patent number 9,444,037
- Issue date Sep 13, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure
- Patent number 9,391,264
- Issue date Jul 12, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive structure having a metal oxide tunnel barrier and...
- Patent number 9,293,698
- Issue date Mar 22, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reducing switching variation in magnetoresistive devices
- Patent number 9,281,168
- Issue date Mar 8, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Chaitanya Mudivarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and process for manufacturing ST-MRAM having a metal oxid...
- Patent number 9,136,464
- Issue date Sep 15, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MRAM synthetic anitferomagnet structure
- Patent number 9,093,637
- Issue date Jul 28, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing and magnetic devices having double tunnel...
- Patent number 9,093,640
- Issue date Jul 28, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM synthetic anitferomagnet structure
- Patent number 8,754,460
- Issue date Jun 17, 2014
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing and magnetic devices having double tunnel...
- Patent number 8,685,756
- Issue date Apr 1, 2014
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR MONITORING AND MANAGING MEMORY DEVICES
- Publication number 20240006011
- Publication date Jan 4, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR MONITORING AND MANAGING MEMORY DEVICES
- Publication number 20220139488
- Publication date May 5, 2022
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...
- Publication number 20210408371
- Publication date Dec 30, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED MAGNETORESISTIVE STRUCTURES AND METHODS THEREFOR
- Publication number 20210375342
- Publication date Dec 2, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Jijun SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...
- Publication number 20210135096
- Publication date May 6, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...
- Publication number 20200295255
- Publication date Sep 17, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...
- Publication number 20200185602
- Publication date Jun 11, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINING BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY TO IM...
- Publication number 20190214070
- Publication date Jul 11, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Jason JANESKY
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...
- Publication number 20190157550
- Publication date May 23, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...
- Publication number 20190123266
- Publication date Apr 25, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY USING SPIN-ORBIT TORQUE
- Publication number 20190115060
- Publication date Apr 18, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Sarin DESHPANDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR SHIELDING MAGNETICALLY SENSITIVE COMPONENTS
- Publication number 20180205005
- Publication date Jul 19, 2018
- EVERSPIN TECHNOLOGIES, INC.
- Wenchin LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Structure Having Two Dielectric Layers, and Method...
- Publication number 20180123032
- Publication date May 3, 2018
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURING MAGNETORESISTIVE MTJ STACKS HAVING AN UNPI...
- Publication number 20180026180
- Publication date Jan 25, 2018
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Structure having Two Dielectric Layers, and Method...
- Publication number 20170148980
- Publication date May 25, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY
- Publication number 20170117029
- Publication date Apr 27, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
NON-REACTIVE PHOTORESIST REMOVAL AND SPACER LAYER OPTIMIZATION IN A...
- Publication number 20160315253
- Publication date Oct 27, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Sarin A. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti...
- Publication number 20160315252
- Publication date Oct 27, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier
- Publication number 20160172582
- Publication date Jun 16, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE DATA RETENTION IN MAGNETORESISTIVE RANDOM ACCESS M...
- Publication number 20160104519
- Publication date Apr 14, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Jon Slaughter
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION AND TESTING FOR MAGNETORESISTIVE MEMORY
- Publication number 20160064058
- Publication date Mar 3, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING SWITCHING VARIATION IN MAGNETORESISTIVE DEVICES
- Publication number 20150357560
- Publication date Dec 10, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Chaitanya Mudivarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR SHIELDING MAGNETICALLY SENSITIVE COMPONENTS
- Publication number 20150333251
- Publication date Nov 19, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Wenchin LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Structure having Two Dielectric Layers, and Method...
- Publication number 20150318465
- Publication date Nov 5, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM HAVING AN UNPINNED, FIXED SYNTHETIC ANTI-FERROMAGNETIC STRUCTURE
- Publication number 20150280110
- Publication date Oct 1, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFAC...
- Publication number 20150236248
- Publication date Aug 20, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Sarin A. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Structure having a Metal Oxide Tunnel Barrier and...
- Publication number 20150236253
- Publication date Aug 20, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE
- Publication number 20150021606
- Publication date Jan 22, 2015
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AND MAGNETIC DEVICES HAVING DOUBLE TUNNEL...
- Publication number 20140220707
- Publication date Aug 7, 2014
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE
- Publication number 20140021471
- Publication date Jan 23, 2014
- Srinivas V. Pietambaram
- H01 - BASIC ELECTRIC ELEMENTS

Jason Allen Janesky

Person

Patents Grantslast 30 patents

Magnetoresistive structure having two dielectric layers, and method...

Systems and methods for monitoring and managing memory devices

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...

Stacked magnetoresistive structures and methods therefor

Magnetoresistive structure having two dielectric layers, and method...

Structures and methods for shielding magnetically sensitive components

Determining bias configuration for write operations in memory to im...

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferr...

Magnetoresistive structure having two dielectric layers, and method...

Perpendicular magnetic memory using spin-orbit torque

Determining bias configuration for write operations in memory to im...

Magnetoresistive structure having two dielectric layers, and method...

Methods of manufacturing magnetoresistive MTJ stacks having an unpi...

Structures and methods for shielding magnetically sensitive components

Magnetoresistive structure having two dielectric layers, and method...

Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti...

Non-reactive photoresist removal and spacer layer optimization in a...

Magnetoresistive structure having two dielectric layers, and method...

Configuration and testing for magnetoresistive memory to ensure lon...

High temperature data retention in magnetoresistive random access m...

Magnetoresistive memory element having a metal oxide tunnel barrier

MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure

Magnetoresistive structure having a metal oxide tunnel barrier and...

Reducing switching variation in magnetoresistive devices

Apparatus and process for manufacturing ST-MRAM having a metal oxid...

MRAM synthetic anitferomagnet structure

Method for manufacturing and magnetic devices having double tunnel...

MRAM synthetic anitferomagnet structure

Method for manufacturing and magnetic devices having double tunnel...

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR MONITORING AND MANAGING MEMORY DEVICES

SYSTEMS AND METHODS FOR MONITORING AND MANAGING MEMORY DEVICES

MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...

STACKED MAGNETORESISTIVE STRUCTURES AND METHODS THEREFOR

MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...

MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...

MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...

DETERMINING BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY TO IM...

MAGNETORESISTIVE STRUCTURE HAVING TWO DIELECTRIC LAYERS, AND METHOD...

MAGNETORESISTIVE STACKS WITH AN UNPINNED, FIXED SYNTHETIC ANTI-FERR...

PERPENDICULAR MAGNETIC MEMORY USING SPIN-ORBIT TORQUE

STRUCTURES AND METHODS FOR SHIELDING MAGNETICALLY SENSITIVE COMPONENTS

Magnetoresistive Structure Having Two Dielectric Layers, and Method...

METHODS OF MANUFACTURING MAGNETORESISTIVE MTJ STACKS HAVING AN UNPI...

Magnetoresistive Structure having Two Dielectric Layers, and Method...

BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY

NON-REACTIVE PHOTORESIST REMOVAL AND SPACER LAYER OPTIMIZATION IN A...

Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti...

Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier

HIGH TEMPERATURE DATA RETENTION IN MAGNETORESISTIVE RANDOM ACCESS M...

CONFIGURATION AND TESTING FOR MAGNETORESISTIVE MEMORY

REDUCING SWITCHING VARIATION IN MAGNETORESISTIVE DEVICES

STRUCTURES AND METHODS FOR SHIELDING MAGNETICALLY SENSITIVE COMPONENTS

Magnetoresistive Structure having Two Dielectric Layers, and Method...

MRAM HAVING AN UNPINNED, FIXED SYNTHETIC ANTI-FERROMAGNETIC STRUCTURE

TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFAC...

Magnetoresistive Structure having a Metal Oxide Tunnel Barrier and...

MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE

METHOD FOR MANUFACTURING AND MAGNETIC DEVICES HAVING DOUBLE TUNNEL...

MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE