Jason R. Jenny

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 9,099,377
- Issue date Aug 4, 2015
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 9,059,118
- Issue date Jun 16, 2015
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 8,618,553
- Issue date Dec 31, 2013
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 8,410,488
- Issue date Apr 2, 2013
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 7,811,943
- Issue date Oct 12, 2010
- Cree, Inc.
- Calvin H. Carter, Jr.
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage silicon carbide devices having bi-directional blocking...
- Patent number 7,615,801
- Issue date Nov 10, 2009
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One hundred millimeter high purity semi-insulating single crystal s...
- Patent number 7,601,441
- Issue date Oct 13, 2009
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon carbide MOS-bipolar devices having bi-directio...
- Patent number 7,414,268
- Issue date Aug 19, 2008
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage silicon carbide devices having bi-directional blocking...
- Patent number 7,391,057
- Issue date Jun 24, 2008
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,323,051
- Issue date Jan 29, 2008
- Cree, Inc.
- Hudson M. Hobgood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for the production of bulk silicon carbide sin...
- Patent number 7,323,052
- Issue date Jan 29, 2008
- Cree, Inc.
- Valeri F. Tsvetkov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Double side polished wafer scratch inspection tool
- Patent number 7,319,518
- Issue date Jan 15, 2008
- Cree, Inc.
- Robert Tyler Leonard
- G01 - MEASURING TESTING
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing nitrogen content in silicon carbide crystals by sublimatio...
- Patent number 7,220,313
- Issue date May 22, 2007
- Cree, Inc.
- George J. Fechko, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Patent number 7,147,715
- Issue date Dec 12, 2006
- Cree, Inc.
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming power semiconductor devices using boule-grown si...
- Patent number 6,974,720
- Issue date Dec 13, 2005
- Cree, Inc.
- Joseph John Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating silicon carbide produced by Neutron transmutation d...
- Patent number 6,964,917
- Issue date Nov 15, 2005
- Cree, Inc.
- Valeri F. Tsvetkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 6,814,801
- Issue date Nov 9, 2004
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20130181231
- Publication date Jul 18, 2013
- Cree, Inc.
- CEM BASCERI
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...
- Publication number 20100320477
- Publication date Dec 23, 2010
- Cree, Inc.
- Calvin H. Carter, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Semi-Insulating Resistivity in High Purity Sil...
- Publication number 20090256162
- Publication date Oct 15, 2009
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080083366
- Publication date Apr 10, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080067524
- Publication date Mar 20, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...
- Publication number 20070283880
- Publication date Dec 13, 2007
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Double side polished wafer scratch inspection tool
- Publication number 20070081150
- Publication date Apr 12, 2007
- Robert Tyler Leonard
- G01 - MEASURING TESTING
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261346
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide MOS-bipolar devices having bi-directio...
- Publication number 20060261347
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261348
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage silicon carbide devices having bi-directional blocking...
- Publication number 20060261345
- Publication date Nov 23, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing silicon carbide crystals having increased min...
- Publication number 20060130742
- Publication date Jun 22, 2006
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20060107890
- Publication date May 25, 2006
- Hudson McDonald Hobgood
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Publication number 20050145164
- Publication date Jul 7, 2005
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter high purity semi-insulating single crystal s...
- Publication number 20050126471
- Publication date Jun 16, 2005
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of forming power semiconductor devices using boule-grown si...
- Publication number 20050082542
- Publication date Apr 21, 2005
- Joseph John Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Reducing nitrogen content in silicon carbide crystals by sublimatio...
- Publication number 20050022727
- Publication date Feb 3, 2005
- George J. Fechko
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Publication number 20050022724
- Publication date Feb 3, 2005
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20040206298
- Publication date Oct 21, 2004
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-Insulating Silicon Carbide Produced by Neutron Transmutation D...
- Publication number 20040201024
- Publication date Oct 14, 2004
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20030233975
- Publication date Dec 25, 2003
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH

Jason R. Jenny

Person

Patents Grantslast 30 patents

Micropipe-free silicon carbide and related method of manufacture

Method for producing semi-insulating resistivity in high purity sil...

Process for producing silicon carbide crystals having increased min...

Micropipe-free silicon carbide and related method of manufacture

One hundred millimeter single crystal silicon carbide wafer

Process for producing silicon carbide crystals having increased min...

High voltage silicon carbide devices having bi-directional blocking...

One hundred millimeter high purity semi-insulating single crystal s...

High voltage silicon carbide MOS-bipolar devices having bi-directio...

High voltage silicon carbide devices having bi-directional blocking...

One hundred millimeter single crystal silicon carbide wafer

Apparatus and method for the production of bulk silicon carbide sin...

Double side polished wafer scratch inspection tool

Seeded single crystal silicon carbide growth and resulting crystals

Reducing nitrogen content in silicon carbide crystals by sublimatio...

Growth of ultra-high purity silicon carbide crystals in an ambient...

Methods of forming power semiconductor devices using boule-grown si...

Semi-insulating silicon carbide produced by Neutron transmutation d...

Method for producing semi-insulating resistivity in high purity sil...

Patents Applicationslast 30 patents

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...

Method for Producing Semi-Insulating Resistivity in High Purity Sil...

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...

Double side polished wafer scratch inspection tool

High voltage silicon carbide devices having bi-directional blocking...

High voltage silicon carbide MOS-bipolar devices having bi-directio...

High voltage silicon carbide devices having bi-directional blocking...

High voltage silicon carbide devices having bi-directional blocking...

Seeded single crystal silicon carbide growth and resulting crystals

Process for producing silicon carbide crystals having increased min...

One hundred millimeter single crystal silicon carbide wafer

Growth of ultra-high purity silicon carbide crystals in an ambient...

One hundred millimeter high purity semi-insulating single crystal s...

Methods of forming power semiconductor devices using boule-grown si...

Reducing nitrogen content in silicon carbide crystals by sublimatio...

Growth of ultra-high purity silicon carbide crystals in an ambient...

Method for producing semi-insulating resistivity in high purity sil...

Semi-Insulating Silicon Carbide Produced by Neutron Transmutation D...

Method for producing semi-insulating resistivity in high purity sil...