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Jay G. Harrington
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Wappingers Falls, NY, US
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last 30 patents
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Patent Grant
Method to create EEPROM memory structures integrated with high perf...
Patent number
6,504,207
Issue date
Jan 7, 2003
International Business Machines Corporation
Bomy A. Chen
G11 - INFORMATION STORAGE
Information
Patent Grant
Method of providing variant fills in semiconductor trenches
Patent number
6,410,402
Issue date
Jun 25, 2002
International Business Machines Corporation
Jay Harrington
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
DRAM cell with vertical CMOS transistor
Patent number
6,326,275
Issue date
Dec 4, 2001
International Business Machines Corporation
Jay G. Harrington
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned deep trench isolation to shallow trench isolation
Patent number
6,297,127
Issue date
Oct 2, 2001
International Business Machines Corporation
Bomy A. Chen
H01 - BASIC ELECTRIC ELEMENTS