Jean-Baptiste LALOE

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Saratoga Springs, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming a metal gate including de-oxidation of an oxidiz...
- Patent number 10,854,472
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double barrier layer sets for contacts in semiconductor device
- Patent number 10,453,747
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Aditya Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depositing an etch stop layer before a dummy cap layer to improve g...
- Patent number 9,209,258
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures for NFET semiconduct...
- Patent number 8,803,254
- Issue date Aug 12, 2014
- GLOBALFOUNDRIES Inc.
- Jean-Baptiste Laloe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE BARRIER LAYER SETS FOR CONTACTS IN SEMICONDUCTOR DEVICE
- Publication number 20190067098
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Aditya Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DE-OXIDATION OF METAL GATE FOR IMPROVED GATE PERFORMANCE
- Publication number 20150270142
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITING AN ETCH STOP LAYER BEFORE A DUMMY CAP LAYER TO IMPROVE G...
- Publication number 20150249136
- Publication date Sep 3, 2015
- GLOBALFOUNDRIES INC.
- Feng ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES FOR NFET SEMICONDUCT...
- Publication number 20140145274
- Publication date May 29, 2014
- GLOBALFOUNDRIES INC.
- Jean-Baptiste Laloe
- H01 - BASIC ELECTRIC ELEMENTS