Jean-Pierre Faurie

Person

Valbonne, FR

People

Patents Grantslast 30 patents

Information Patent Grant
N-CO-doped semiconductor substrate
- Patent number 11,990,335
- Issue date May 21, 2024
- IVWorks Co., Ltd.
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor material including different crystalline orientation...
- Patent number 10,497,833
- Issue date Dec 3, 2019
- SAINT-GOBAIN LUMILOG
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a wafer of semiconducting material based o...
- Patent number 10,181,399
- Issue date Jan 15, 2019
- Saint-Gobain Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor substrate
- Patent number 10,043,662
- Issue date Aug 7, 2018
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material including different crystalline orientation...
- Patent number 9,882,087
- Issue date Jan 30, 2018
- SAINT-GOBAIN LUMILOG
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a freestanding semiconductor wafer
- Patent number 9,318,314
- Issue date Apr 19, 2016
- SAINT-GOBAIN CRISTAUX ET DECTECTEURS
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V substrate material with particular crystallographic fea...
- Patent number 9,312,129
- Issue date Apr 12, 2016
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of manufacturing
- Patent number 9,209,018
- Issue date Dec 8, 2015
- Saint-Gobain Cristaux et Detecteurs
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V substrate material with thin buffer layer and methods o...
- Patent number 9,130,120
- Issue date Sep 8, 2015
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor substrate and method of forming
- Patent number 9,064,685
- Issue date Jun 23, 2015
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing of low defect density free-standing gallium nitride s...
- Patent number 9,012,306
- Issue date Apr 21, 2015
- Saint-Gobain Cristaux et Detecteurs
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate and method of forming
- Patent number 8,921,210
- Issue date Dec 30, 2014
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V substrate material with particular crystallographic fea...
- Patent number 8,916,456
- Issue date Dec 23, 2014
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a single crystal of nitride by epitaxial g...
- Patent number 8,557,042
- Issue date Oct 15, 2013
- Saint-Gobain Cristaux et Detecteurs
- Eric Aujol
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for growth of low dislocation density GaN
- Patent number 8,283,239
- Issue date Oct 9, 2012
- Saint-Gobain Cristaux & Detecteurs
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing an epitaxial layer of galium nitride
- Patent number 8,030,101
- Issue date Oct 4, 2011
- Saint-Gobain Cristaux et Detecteurs
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing an epitalixal layer of galium nitride
- Patent number 7,560,296
- Issue date Jul 14, 2009
- Lumilog
- Eric Frayssinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing by vapour-phase epitaxy a gallium nitride film...
- Patent number 7,455,729
- Issue date Nov 25, 2008
- Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing gallium nitride substrates by lateral overgrowth thro...
- Patent number 7,445,673
- Issue date Nov 4, 2008
- Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an epitaxial layer of gallium nitride
- Patent number 7,118,929
- Issue date Oct 10, 2006
- Lumilog
- Eric Frayssinet
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
N-CO-DOPED SEMICONDUCTOR SUBSTRATE.
- Publication number 20220068641
- Publication date Mar 3, 2022
- SAINT-GOBAIN LUMILOG
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE
- Publication number 20200381249
- Publication date Dec 3, 2020
- SAINT-GOBAIN LUMILOG
- Bernard BEAUMONT
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR MATERIAL INCLUDING DIFFERENT CRYSTALLINE ORIENTATION...
- Publication number 20180219129
- Publication date Aug 2, 2018
- SAINT-GOBAIN LUMILOG
- Jean-Pierre FAURIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A WAFER OF SEMICONDUCTING MATERIAL BASED O...
- Publication number 20170213719
- Publication date Jul 27, 2017
- SAINT-GOBAIN LUMILOG
- Bernard BEAUMONT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL INCLUDING DIFFERENT CRYSTALLINE ORIENTATION...
- Publication number 20160149083
- Publication date May 26, 2016
- SAINT-GOBAIN LUMILOG
- Jean-Pierre FAURIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING
- Publication number 20150076512
- Publication date Mar 19, 2015
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS O...
- Publication number 20140185639
- Publication date Jul 3, 2014
- Saint-Gobain Cristaux et Detecteurs
- Jean-Pierre Faurie
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V Substrate Material With Particular Crystallographic Fea...
- Publication number 20140065801
- Publication date Mar 6, 2014
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FREESTANDING SEMICONDUCTOR WAFER
- Publication number 20130288455
- Publication date Oct 31, 2013
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING
- Publication number 20130143394
- Publication date Jun 6, 2013
- Saint-Gobain Ceramics & Plastics, Inc.
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS
- Publication number 20130118408
- Publication date May 16, 2013
- Saint-Gobain Ceramics & Plastics, Inc.
- Jean-Pierre Faurie
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III-V SUBSTRATE MATERIAL WITH PARTICULAR CRYSTALLOGRAPHIC FEA...
- Publication number 20130082279
- Publication date Apr 4, 2013
- Jean-Pierre Faurie
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING
- Publication number 20130001748
- Publication date Jan 3, 2013
- Saint-Gobain Ceramics & Plastics, Inc.
- Jean-Pierre Faurie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING
- Publication number 20130001586
- Publication date Jan 3, 2013
- Saint-Gobain Ceramics & Plastics, Inc.
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE S...
- Publication number 20110316000
- Publication date Dec 29, 2011
- SAINT-GOBAIN CRISTAUX & DETECTEURS
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL G...
- Publication number 20100074826
- Publication date Mar 25, 2010
- Eric Aujol
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE
- Publication number 20100001289
- Publication date Jan 7, 2010
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Growth of Low Dislocation Density Gan
- Publication number 20090278136
- Publication date Nov 12, 2009
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing an epitalixal layer of galium nitride
- Publication number 20070072320
- Publication date Mar 29, 2007
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing gallium nitride substrates by lateral overgrowth thro...
- Publication number 20060266281
- Publication date Nov 30, 2006
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing by vapour-phase epitaxy a gallium nitride film...
- Publication number 20060099781
- Publication date May 11, 2006
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing an epitaxial layer of gallium nitride
- Publication number 20040137732
- Publication date Jul 15, 2004
- Eric Frayssinet
- C30 - CRYSTAL GROWTH

Jean-Pierre Faurie

Person

Patents Grantslast 30 patents

N-CO-doped semiconductor substrate

Semiconductor material including different crystalline orientation...

Method for manufacturing a wafer of semiconducting material based o...

Method of forming semiconductor substrate

Semiconductor material including different crystalline orientation...

Method of forming a freestanding semiconductor wafer

Group III-V substrate material with particular crystallographic fea...

Semiconductor substrate and method of manufacturing

Group III-V substrate material with thin buffer layer and methods o...

Semiconductor substrate and method of forming

Manufacturing of low defect density free-standing gallium nitride s...

Semiconductor substrate and method of forming

Group III-V substrate material with particular crystallographic fea...

Method for manufacturing a single crystal of nitride by epitaxial g...

Process for growth of low dislocation density GaN

Process for producing an epitaxial layer of galium nitride

Process for producing an epitalixal layer of galium nitride

Method for producing by vapour-phase epitaxy a gallium nitride film...

Manufacturing gallium nitride substrates by lateral overgrowth thro...

Process for producing an epitaxial layer of gallium nitride

Patents Applicationslast 30 patents

N-CO-DOPED SEMICONDUCTOR SUBSTRATE.

METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR MATERIAL INCLUDING DIFFERENT CRYSTALLINE ORIENTATION...

METHOD FOR MANUFACTURING A WAFER OF SEMICONDUCTING MATERIAL BASED O...

SEMICONDUCTOR MATERIAL INCLUDING DIFFERENT CRYSTALLINE ORIENTATION...

SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING

GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS O...

Group III-V Substrate Material With Particular Crystallographic Fea...

METHOD OF FORMING A FREESTANDING SEMICONDUCTOR WAFER

SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING

SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS

GROUP III-V SUBSTRATE MATERIAL WITH PARTICULAR CRYSTALLOGRAPHIC FEA...

SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING

MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE S...

METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL G...

PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE

Process for Growth of Low Dislocation Density Gan

Process for producing an epitalixal layer of galium nitride

Manufacturing gallium nitride substrates by lateral overgrowth thro...

Method for producing by vapour-phase epitaxy a gallium nitride film...

Process for producing an epitaxial layer of gallium nitride