Jeffrey C. SHEARER

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrapped-around contact for vertical field effect transistor top sou...
- Patent number 11,605,717
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate cap including an etch-stop layer
- Patent number 11,257,716
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate cap including an etch-stop layer
- Patent number 11,222,820
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate cut after dummy gate removal
- Patent number 11,024,715
- Issue date Jun 1, 2021
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried contact to provide reduced VFET feature-to-feature tolerance...
- Patent number 10,804,148
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried contact to provide reduced VFET feature-to-feature tolerance...
- Patent number 10,796,957
- Issue date Oct 6, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling high aspect ratio sacrificial gates
- Patent number 10,629,698
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate cut after dummy gate removal
- Patent number 10,600,868
- Issue date Mar 24, 2020
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,586,733
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing trench CD in EUV patterning without increasin...
- Patent number 10,497,575
- Issue date Dec 3, 2019
- Tokyo Electron Limited
- Angelique D. Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling controlled spacer RIE
- Patent number 10,446,452
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanowire semiconductor device
- Patent number 10,396,181
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming field effect transistor (FET) circuits, and formi...
- Patent number 10,304,692
- Issue date May 28, 2019
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanowire semiconductor device
- Patent number 10,256,326
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut on a vertical field effect transistor with a defined-width...
- Patent number 10,249,753
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming a replacement contact
- Patent number 10,249,533
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Jeffrey Shearer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate cut after dummy gate removal
- Patent number 10,229,854
- Issue date Mar 12, 2019
- International Business Machines Corporation
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,224,239
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,204,827
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanowire semiconductor device
- Patent number 10,074,730
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut on a vertical field effect transistor with a defined-width...
- Patent number 9,882,048
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 9,859,212
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling high aspect ratio sacrificial gates
- Patent number 9,842,739
- Issue date Dec 12, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,754,942
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,748,146
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling large feature alignment marks with sidewall image transfer...
- Patent number 9,716,184
- Issue date Jul 25, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling high aspect ratio sacrificial gates
- Patent number 9,659,779
- Issue date May 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling controlled spacer RIE
- Patent number 9,627,277
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling large feature alignment marks with sidewall image transfer...
- Patent number 9,536,744
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,450,095
- Issue date Sep 20, 2016
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING
- Publication number 20240395557
- Publication date Nov 28, 2024
- TOKYO ELECTRON LIMITED
- Du ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION
- Publication number 20230187442
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH DIFFERENT CHANNEL MATERIALS
- Publication number 20220406776
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPPED-AROUND CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR TOP SOU...
- Publication number 20220199785
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET GATE CUT AFTER DUMMY GATE REMOVAL
- Publication number 20200243648
- Publication date Jul 30, 2020
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CAP INCLUDING AN ETCH-STOP LAYER
- Publication number 20200090998
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CAP INCLUDING AN ETCH-STOP LAYER
- Publication number 20200006137
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET GATE CUT AFTER DUMMY GATE REMOVAL
- Publication number 20190189517
- Publication date Jun 20, 2019
- International Business Machines Corporation
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FIELD EFFECT TRANSISTOR (FET) CIRCUITS, AND FORMI...
- Publication number 20190164773
- Publication date May 30, 2019
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20190157140
- Publication date May 23, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...
- Publication number 20190067101
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...
- Publication number 20190067100
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE
- Publication number 20180337261
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Increasing Trench CD in EUV Patterning Without Increasin...
- Publication number 20180323072
- Publication date Nov 8, 2018
- TOKYO ELECTRON LIMITED
- Angelique D. Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES
- Publication number 20180122643
- Publication date May 3, 2018
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT ON A VERTICAL FIELD EFFECT TRANSISTOR WITH A DEFINED-WIDTH...
- Publication number 20180097107
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019202
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019200
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019203
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT ON A VERTICAL FIELD EFFECT TRANSISTOR WITH A DEFINED-WIDTH...
- Publication number 20180006150
- Publication date Jan 4, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW
- Publication number 20170229350
- Publication date Aug 10, 2017
- International Business Machines Corporation
- MARC A. BERGENDAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW
- Publication number 20170229463
- Publication date Aug 10, 2017
- International Business Machines Corporation
- MARC A. BERGENDAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE
- Publication number 20170221708
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE
- Publication number 20170222024
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING CONTROLLED SPACER RIE
- Publication number 20170221773
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING LARGE FEATURE ALIGNMENT MARKS WITH SIDEWALL IMAGE TRANSFER...
- Publication number 20170179305
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING CONTROLLED SPACER RIE
- Publication number 20160365292
- Publication date Dec 15, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES
- Publication number 20160233095
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES
- Publication number 20150372113
- Publication date Dec 24, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES
- Publication number 20150372127
- Publication date Dec 24, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey C. SHEARER

Person

Patents Grantslast 30 patents

Wrapped-around contact for vertical field effect transistor top sou...

Self-aligned gate cap including an etch-stop layer

Self-aligned gate cap including an etch-stop layer

FinFET gate cut after dummy gate removal

Buried contact to provide reduced VFET feature-to-feature tolerance...

Buried contact to provide reduced VFET feature-to-feature tolerance...

Method and structure for enabling high aspect ratio sacrificial gates

FinFET gate cut after dummy gate removal

Multi-level air gap formation in dual-damascene structure

Method for increasing trench CD in EUV patterning without increasin...

Method and structure for enabling controlled spacer RIE

Forming stacked nanowire semiconductor device

Method of forming field effect transistor (FET) circuits, and formi...

Forming stacked nanowire semiconductor device

Gate cut on a vertical field effect transistor with a defined-width...

Method and structure for forming a replacement contact

FinFET gate cut after dummy gate removal

Multi-level air gap formation in dual-damascene structure

Multi-level air gap formation in dual-damascene structure

Forming stacked nanowire semiconductor device

Gate cut on a vertical field effect transistor with a defined-width...

Multi-level air gap formation in dual-damascene structure

Method and structure for enabling high aspect ratio sacrificial gates

Single spacer for complementary metal oxide semiconductor process flow

Single spacer for complementary metal oxide semiconductor process flow

Enabling large feature alignment marks with sidewall image transfer...

Method and structure for enabling high aspect ratio sacrificial gates

Method and structure for enabling controlled spacer RIE

Enabling large feature alignment marks with sidewall image transfer...

Single spacer for complementary metal oxide semiconductor process flow

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING

VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION

STACKED FET WITH DIFFERENT CHANNEL MATERIALS

WRAPPED-AROUND CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR TOP SOU...

FINFET GATE CUT AFTER DUMMY GATE REMOVAL

SELF-ALIGNED GATE CAP INCLUDING AN ETCH-STOP LAYER

SELF-ALIGNED GATE CAP INCLUDING AN ETCH-STOP LAYER

FINFET GATE CUT AFTER DUMMY GATE REMOVAL

METHOD OF FORMING FIELD EFFECT TRANSISTOR (FET) CIRCUITS, AND FORMI...

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...

BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...

FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE

Method For Increasing Trench CD in EUV Patterning Without Increasin...

METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES

GATE CUT ON A VERTICAL FIELD EFFECT TRANSISTOR WITH A DEFINED-WIDTH...

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

GATE CUT ON A VERTICAL FIELD EFFECT TRANSISTOR WITH A DEFINED-WIDTH...

SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW

SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW

FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE

FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE

METHOD AND STRUCTURE FOR ENABLING CONTROLLED SPACER RIE

ENABLING LARGE FEATURE ALIGNMENT MARKS WITH SIDEWALL IMAGE TRANSFER...

METHOD AND STRUCTURE FOR ENABLING CONTROLLED SPACER RIE

METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES

METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES

METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES