Jeffrey Junhao Xu

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned quadruple patterning process for Fin pitch below 20nm
- Patent number 10,559,501
- Issue date Feb 11, 2020
- QUALCOMM Incorporated
- Stanley Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing tip-to-tip distance between end portions of metal lines fo...
- Patent number 10,504,840
- Issue date Dec 10, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of multi threshold voltage CMOS
- Patent number 10,497,625
- Issue date Dec 3, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide semiconductor (MOS) standard cells employing electrical...
- Patent number 10,497,702
- Issue date Dec 3, 2019
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including a FinFET and a nanostructure FET
- Patent number 10,439,039
- Issue date Oct 8, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vertical interconnect accesses (VIAs) in inter...
- Patent number 10,354,912
- Issue date Jul 16, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing tip-to-tip distance between end portions of metal lines fo...
- Patent number 10,347,579
- Issue date Jul 9, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell circuits employing voltage rails electrically coupled...
- Patent number 10,283,526
- Issue date May 7, 2019
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an airgap defined at least partially by...
- Patent number 10,163,792
- Issue date Dec 25, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire device with reduced parasitics
- Patent number 10,157,992
- Issue date Dec 18, 2018
- QUALCOMM Incorporated
- Mustafa Badaroglu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices employing field effect transistors (FETs) wit...
- Patent number 10,141,305
- Issue date Nov 27, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) devices employing pl...
- Patent number 10,115,723
- Issue date Oct 30, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-modulated Schottky non-volatile memory
- Patent number 10,102,898
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Standard cell circuits employing high aspect ratio voltage rails fo...
- Patent number 10,090,244
- Issue date Oct 2, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 10,079,293
- Issue date Sep 18, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for selectively forming nitride caps on metal...
- Patent number 10,062,763
- Issue date Aug 28, 2018
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked nanowire field effect transistors
- Patent number 10,043,796
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire channel structures of continuously stacked nanowires for c...
- Patent number 10,032,678
- Issue date Jul 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimum track standard cell circuits for reduced area
- Patent number 9,985,014
- Issue date May 29, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact wrap around structure
- Patent number 9,953,979
- Issue date Apr 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods to reduce parasitic capacitance
- Patent number 9,941,156
- Issue date Apr 10, 2018
- QUALCOMM Incorporated
- Shiqun Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of multi threshold voltage CMOS
- Patent number 9,922,880
- Issue date Mar 20, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile one-time programmable memory device
- Patent number 9,876,123
- Issue date Jan 23, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 9,871,121
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjacent device isolation
- Patent number 9,824,936
- Issue date Nov 21, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned structure
- Patent number 9,799,560
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal cut and via for back-end-of-line (BEOL) processe...
- Patent number 9,793,164
- Issue date Oct 17, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit devices and methods
- Patent number 9,721,891
- Issue date Aug 1, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line integration methods and semiconductor devices
- Patent number 9,653,399
- Issue date May 16, 2017
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line (MOL) manufactured integrated circuits (ICs) employi...
- Patent number 9,620,454
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm
- Publication number 20200161189
- Publication date May 21, 2020
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TIP-TO-TIP DISTANCE BETWEEN END PORTIONS OF METAL LINES FO...
- Publication number 20190189554
- Publication date Jun 20, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE DEVICE WITH REDUCED PARASITICS
- Publication number 20190067435
- Publication date Feb 28, 2019
- QUALCOMM Incorporated
- Mustafa Badaroglu
- B82 - NANO-TECHNOLOGY
Information Patent Application
METAL-OXIDE SEMICONDUCTOR (MOS) STANDARD CELLS EMPLOYING ELECTRICAL...
- Publication number 20180301447
- Publication date Oct 18, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES EMPLOYING REDUCED AREA CONFORMAL CONTACTS TO...
- Publication number 20180212029
- Publication date Jul 26, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TIP-TO-TIP DISTANCE BETWEEN END PORTIONS OF METAL LINES FO...
- Publication number 20180204794
- Publication date Jul 19, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY
- Publication number 20180190338
- Publication date Jul 5, 2018
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL CIRCUITS EMPLOYING VOLTAGE RAILS ELECTRICALLY COUPLED...
- Publication number 20180175060
- Publication date Jun 21, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS OF MULTI THRESHOLD VOLTAGE CMOS
- Publication number 20180166340
- Publication date Jun 14, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20180114848
- Publication date Apr 26, 2018
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...
- Publication number 20180082906
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES EMPLOYING FIELD EFFECT TRANSISTORS (FETs) WIT...
- Publication number 20180076197
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMUM TRACK STANDARD CELL CIRCUITS FOR REDUCED AREA
- Publication number 20180076189
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STANDARD CELL CIRCUITS EMPLOYING HIGH ASPECT RATIO VOLTAGE RAILS FO...
- Publication number 20180033729
- Publication date Feb 1, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES EMPLOYING PL...
- Publication number 20170352662
- Publication date Dec 7, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET
- Publication number 20170278842
- Publication date Sep 28, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED VERTICAL INTERCONNECT ACCESSES (VIAs) IN INTER...
- Publication number 20170271202
- Publication date Sep 21, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN WITH AN EPITAXIAL CLADDING LAYER
- Publication number 20170236841
- Publication date Aug 17, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS
- Publication number 20170221884
- Publication date Aug 3, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170207313
- Publication date Jul 20, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE DEVICE WITH REDUCED PARASITICS
- Publication number 20170186846
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A DEVICE INCLUDING AN INTERFACIAL DIPOLE LAYER
- Publication number 20170179261
- Publication date Jun 22, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170170268
- Publication date Jun 15, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...
- Publication number 20170140986
- Publication date May 18, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...
- Publication number 20170110374
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...
- Publication number 20170110541
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...
- Publication number 20170104088
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND METHODS
- Publication number 20170092587
- Publication date Mar 30, 2017
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...
- Publication number 20170077090
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJACENT DEVICE ISOLATION
- Publication number 20170033020
- Publication date Feb 2, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey Junhao Xu

Person

Patents Grantslast 30 patents

Self-aligned quadruple patterning process for Fin pitch below 20nm

Reducing tip-to-tip distance between end portions of metal lines fo...

Method and apparatus of multi threshold voltage CMOS

Metal-oxide semiconductor (MOS) standard cells employing electrical...

Integrated circuits including a FinFET and a nanostructure FET

Forming self-aligned vertical interconnect accesses (VIAs) in inter...

Reducing tip-to-tip distance between end portions of metal lines fo...

Standard cell circuits employing voltage rails electrically coupled...

Semiconductor device having an airgap defined at least partially by...

Nanowire device with reduced parasitics

Semiconductor devices employing field effect transistors (FETs) wit...

Complementary metal oxide semiconductor (CMOS) devices employing pl...

Ferroelectric-modulated Schottky non-volatile memory

Standard cell circuits employing high aspect ratio voltage rails fo...

Semiconductor device having a gap defined therein

Method and apparatus for selectively forming nitride caps on metal...

Vertically stacked nanowire field effect transistors

Nanowire channel structures of continuously stacked nanowires for c...

Minimum track standard cell circuits for reduced area

Contact wrap around structure

Systems and methods to reduce parasitic capacitance

Method and apparatus of multi threshold voltage CMOS

Non-volatile one-time programmable memory device

Semiconductor device having a gap defined therein

Adjacent device isolation

Self-aligned structure

Self-aligned metal cut and via for back-end-of-line (BEOL) processe...

Integrated circuit devices and methods

Middle-of-line integration methods and semiconductor devices

Middle-of-line (MOL) manufactured integrated circuits (ICs) employi...

Patents Applicationslast 30 patents

SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

REDUCING TIP-TO-TIP DISTANCE BETWEEN END PORTIONS OF METAL LINES FO...

NANOWIRE DEVICE WITH REDUCED PARASITICS

METAL-OXIDE SEMICONDUCTOR (MOS) STANDARD CELLS EMPLOYING ELECTRICAL...

SEMICONDUCTOR DEVICES EMPLOYING REDUCED AREA CONFORMAL CONTACTS TO...

REDUCING TIP-TO-TIP DISTANCE BETWEEN END PORTIONS OF METAL LINES FO...

FERROELECTRIC-MODULATED SCHOTTKY NON-VOLATILE MEMORY

STANDARD CELL CIRCUITS EMPLOYING VOLTAGE RAILS ELECTRICALLY COUPLED...

METHOD AND APPARATUS OF MULTI THRESHOLD VOLTAGE CMOS

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...

SEMICONDUCTOR DEVICES EMPLOYING FIELD EFFECT TRANSISTORS (FETs) WIT...

MINIMUM TRACK STANDARD CELL CIRCUITS FOR REDUCED AREA

STANDARD CELL CIRCUITS EMPLOYING HIGH ASPECT RATIO VOLTAGE RAILS FO...

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES EMPLOYING PL...

INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET

FORMING SELF-ALIGNED VERTICAL INTERCONNECT ACCESSES (VIAs) IN INTER...

FIN WITH AN EPITAXIAL CLADDING LAYER

VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

NANOWIRE DEVICE WITH REDUCED PARASITICS

METHODS OF FORMING A DEVICE INCLUDING AN INTERFACIAL DIPOLE LAYER

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...

METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...

INTEGRATED CIRCUIT DEVICES AND METHODS

MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...

ADJACENT DEVICE ISOLATION