Jeffrey P. Fournier

Person

Rochester Hills, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Programmable resistance memory
- Patent number 8,908,413
- Issue date Dec 9, 2014
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory
- Patent number 8,009,455
- Issue date Aug 30, 2011
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature and pressure control methods to fill features with prog...
- Patent number 7,994,034
- Issue date Aug 9, 2011
- Ovonyx, Inc.
- Jeff Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogenated carbon electrode for chalcogenide device and method of...
- Patent number 7,943,922
- Issue date May 17, 2011
- Ovonyx, Inc.
- Jeffrey P. Fournier
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Electrically rewritable non-volatile memory element and method of m...
- Patent number 7,692,272
- Issue date Apr 6, 2010
- Elpida Memory, Inc.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogenated carbon electrode for chalcogenide device and method of...
- Patent number 7,473,950
- Issue date Jan 6, 2009
- Ovonyx, Inc.
- Jeffrey P. Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistance memory element with titanium rich adhesion...
- Patent number 7,129,531
- Issue date Oct 31, 2006
- Ovonyx, Inc.
- Jeffrey P. Fournier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Programmable Resistance Memory
- Publication number 20110305075
- Publication date Dec 15, 2011
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory and method of making same
- Publication number 20100283029
- Publication date Nov 11, 2010
- Charles Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable resistance memory
- Publication number 20100182825
- Publication date Jul 22, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Method for manufacturing Chalcogenide devices
- Publication number 20090298222
- Publication date Dec 3, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature and pressure control methods to fill features with prog...
- Publication number 20090227092
- Publication date Sep 10, 2009
- Ovonyx, Inc.
- Jeff Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogenated Carbon Electrode for Chalcogenide Device and Method of...
- Publication number 20090146130
- Publication date Jun 11, 2009
- Jeffrey P. Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogenated carbon electrode for chalcogenide device and method of...
- Publication number 20070284635
- Publication date Dec 13, 2007
- Jeffrey P. Fournier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically rewritable non-volatile memory element and method of m...
- Publication number 20070164267
- Publication date Jul 19, 2007
- ELPIDA MEMORY, INC.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable resistance memory element with titanium rich adhesion...
- Publication number 20040026731
- Publication date Feb 12, 2004
- Jeffrey P. Fournier
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey P. Fournier

Person

Patents Grantslast 30 patents

Programmable resistance memory

Programmable resistance memory

Temperature and pressure control methods to fill features with prog...

Nitrogenated carbon electrode for chalcogenide device and method of...

Electrically rewritable non-volatile memory element and method of m...

Nitrogenated carbon electrode for chalcogenide device and method of...

Programmable resistance memory element with titanium rich adhesion...

Patents Applicationslast 30 patents

Programmable Resistance Memory

Programmable resistance memory and method of making same

Programmable resistance memory

Method for manufacturing Chalcogenide devices

Temperature and pressure control methods to fill features with prog...

Nitrogenated Carbon Electrode for Chalcogenide Device and Method of...

Nitrogenated carbon electrode for chalcogenide device and method of...

Electrically rewritable non-volatile memory element and method of m...

Programmable resistance memory element with titanium rich adhesion...