Jeffrey S. Cross

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric capacitor and method of manufacturing the same
- Patent number 7,473,949
- Issue date Jan 6, 2009
- Fujitsu Limited
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,413,913
- Issue date Aug 19, 2008
- Fujitsu Limited
- Kenji Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacture method, and measurement fi...
- Patent number 7,241,656
- Issue date Jul 10, 2007
- Fujitsu Limited
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having die attachment and die pad for applying...
- Patent number 7,239,026
- Issue date Jul 3, 2007
- Fujitsu Limited
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,176,509
- Issue date Feb 13, 2007
- Fujitsu Limited
- Kenji Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a stress layer for applying tensile of...
- Patent number 7,075,135
- Issue date Jul 11, 2006
- Fujitsu Limited
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Grant
Inspection device and inspection method of dielectric film, and met...
- Patent number 7,017,430
- Issue date Mar 28, 2006
- Fujitsu Limited
- Jeffrey S. Cross
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric capacitor having upper electrode lamination and manuf...
- Patent number 6,890,769
- Issue date May 10, 2005
- Fujitsu Limited
- Jeffrey S. Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a strontium ruthenium oxide protective layer...
- Patent number 6,674,633
- Issue date Jan 6, 2004
- Fujitsu Limited
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor having upper electrode lamination
- Patent number 6,649,954
- Issue date Nov 18, 2003
- Fujitsu Limited
- Jeffrey S. Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor having a PZT layer with an excess of Pb
- Patent number 6,555,864
- Issue date Apr 29, 2003
- Fujitsu Limited
- Jeffrey Scott Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,392,265
- Issue date May 21, 2002
- Fujitsu Limited
- Kazuaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having perovskite-type oxide film, production the...
- Patent number 6,194,228
- Issue date Feb 27, 2001
- Fujitsu Limited
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070111336
- Publication date May 17, 2007
- FUJITSU LIMITED
- Kenji Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacture method, and measurement fi...
- Publication number 20060273365
- Publication date Dec 7, 2006
- FUJITSU LIMITED
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and its manufacture method, and measurement fi...
- Publication number 20060211156
- Publication date Sep 21, 2006
- FUJITSU LIMITED
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20050214954
- Publication date Sep 29, 2005
- FUJITSU LIMITED
- Kenji Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor and method of manufacturing the same
- Publication number 20050156216
- Publication date Jul 21, 2005
- FUJITSU LIMITED
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and its manufacture method, and measurement fi...
- Publication number 20040147047
- Publication date Jul 29, 2004
- Jeffrey Scott Cross
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric capacitor having upper electrode lamination and manuf...
- Publication number 20040023417
- Publication date Feb 5, 2004
- FUJITSU LIMITED
- Jeffrey S. Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inspection device and inspection method of dielectric film, and met...
- Publication number 20030221496
- Publication date Dec 4, 2003
- FUJITSU LIMITED
- Jeffrey S. Cross
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric capacitor having upper electrode lamination and manuf...
- Publication number 20030102500
- Publication date Jun 5, 2003
- FUJITSU LIMITED
- Jeffrey S. Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a ferroelectric capacitor
- Publication number 20020190293
- Publication date Dec 19, 2002
- FUJITSU LIMITED
- Jeffrey Scott Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a strontium ruthenium oxide protective layer...
- Publication number 20020149040
- Publication date Oct 17, 2002
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010007364
- Publication date Jul 12, 2001
- FUJITSU LIMITED
- Kazuaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey S. Cross

Person

Patents Grantslast 30 patents

Ferroelectric capacitor and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and its manufacture method, and measurement fi...

Semiconductor device having die attachment and die pad for applying...

Semiconductor device and method for manufacturing the same

Semiconductor device having a stress layer for applying tensile of...

Inspection device and inspection method of dielectric film, and met...

Ferroelectric capacitor having upper electrode lamination and manuf...

Process for producing a strontium ruthenium oxide protective layer...

Ferroelectric capacitor having upper electrode lamination

Ferroelectric capacitor having a PZT layer with an excess of Pb

Semiconductor device

Electronic device having perovskite-type oxide film, production the...

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and its manufacture method, and measurement fi...

Semiconductor device and its manufacture method, and measurement fi...

Semiconductor device and method for manufacturing the same

Ferroelectric capacitor and method of manufacturing the same

Semiconductor device and its manufacture method, and measurement fi...

Ferroelectric capacitor having upper electrode lamination and manuf...

Inspection device and inspection method of dielectric film, and met...

Ferroelectric capacitor having upper electrode lamination and manuf...

Semiconductor device having a ferroelectric capacitor

Process for producing a strontium ruthenium oxide protective layer...

Semiconductor device