Jeffrey S. Flynn

Person

Wake Forest, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,698,286
- Issue date Apr 15, 2014
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,390,101
- Issue date Mar 5, 2013
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V nitride homoepitaxial material of improved quality formed on...
- Patent number 8,212,259
- Issue date Jul 3, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,174,089
- Issue date May 8, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 8,043,731
- Issue date Oct 25, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Doped group III-V nitride materials, and microelectronic devices an...
- Patent number 7,919,791
- Issue date Apr 5, 2011
- Cree, Inc.
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 7,915,152
- Issue date Mar 29, 2011
- Cree, Inc.
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 7,795,707
- Issue date Sep 14, 2010
- Cree, Inc.
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,700,203
- Issue date Apr 20, 2010
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 7,655,197
- Issue date Feb 2, 2010
- Cree, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,390,581
- Issue date Jun 24, 2008
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride optoelectronic device structure with high Al AlGaN diff...
- Patent number 7,282,744
- Issue date Oct 16, 2007
- Cree, Inc.
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,118,813
- Issue date Oct 10, 2006
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 6,596,079
- Issue date Jul 22, 2003
- Advanced Technology Materials, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based devices using thick (Ga, Al, In)N base layers
- Patent number 6,533,874
- Issue date Mar 18, 2003
- Advanced Technology Materials, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND...
- Patent number 6,447,604
- Issue date Sep 10, 2002
- Advanced Technology Materials, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20130193444
- Publication date Aug 1, 2013
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20120181547
- Publication date Jul 19, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20100301351
- Publication date Dec 2, 2010
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
- Publication number 20100289122
- Publication date Nov 18, 2010
- Cree, Inc.
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20100148320
- Publication date Jun 17, 2010
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20080199649
- Publication date Aug 21, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
High electron mobility electronic device structures comprising nati...
- Publication number 20070018198
- Publication date Jan 25, 2007
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20060228584
- Publication date Oct 12, 2006
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
High voltage switching devices and process for forming same
- Publication number 20050167697
- Publication date Aug 4, 2005
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20050104162
- Publication date May 19, 2005
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
III-nitride optoelectronic device structure with high Al AlGaN diff...
- Publication number 20040222431
- Publication date Nov 11, 2004
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...
- Publication number 20030213964
- Publication date Nov 20, 2003
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
Doped group III-V nitride materials, and microelectronic devices an...
- Publication number 20030178633
- Publication date Sep 25, 2003
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V nitride substrate boule and method of making and using the same
- Publication number 20030157376
- Publication date Aug 21, 2003
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH

Jeffrey S. Flynn

Person

Patents Grantslast 30 patents

High voltage switching devices and process for forming same

High voltage switching devices and process for forming same

III-V nitride homoepitaxial material of improved quality formed on...

High voltage switching devices and process for forming same

Vicinal gallium nitride substrate for high quality homoepitaxy

Doped group III-V nitride materials, and microelectronic devices an...

III-V nitride substrate boule and method of making and using the same

High voltage switching devices and process for forming same

Vicinal gallium nitride substrate for high quality homoepitaxy

III-V nitride substrate boule and method of making and using the same

Vicinal gallium nitride substrate for high quality homoepitaxy

III-nitride optoelectronic device structure with high Al AlGaN diff...

Vicinal gallium nitride substrate for high quality homoepitaxy

III-V nitride substrate boule and method of making and using the same

GaN-based devices using thick (Ga, Al, In)N base layers

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND...

Patents Applicationslast 30 patents

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

High electron mobility electronic device structures comprising nati...

Vicinal gallium nitride substrate for high quality homoepitaxy

High voltage switching devices and process for forming same

Vicinal gallium nitride substrate for high quality homoepitaxy

III-nitride optoelectronic device structure with high Al AlGaN diff...

III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...

Doped group III-V nitride materials, and microelectronic devices an...

III-V nitride substrate boule and method of making and using the same