Jengping Lin

Person

Taoyuan Hsien, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating self-aligned contact hole
- Patent number 6,303,491
- Issue date Oct 16, 2001
- Nan Ya Technology Corporation
- Tzu-Ching Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating self-aligned contact
- Patent number 6,107,175
- Issue date Aug 22, 2000
- United Microelectronics Corp.
- Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOS components having lightly doped drain s...
- Patent number 5,966,604
- Issue date Oct 12, 1999
- United Microelectronics Corp.
- Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOSFET devices with heavily doped local channel s...
- Patent number 5,679,602
- Issue date Oct 21, 1997
- United Microelectronics Corporation
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a buried contact structure with WSi.sub.x sid...
- Patent number 5,652,160
- Issue date Jul 29, 1997
- United Microelectronics Corp.
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating FET device with double spacer
- Patent number 5,641,698
- Issue date Jun 24, 1997
- United Microelectronics Corporation
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of oxide spacers formed by liquid phase deposition
- Patent number 5,612,239
- Issue date Mar 18, 1997
- United Microelectronics Corporation
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating silicide shunt of dual-gate CMOS device
- Patent number 5,550,079
- Issue date Aug 27, 1996
- Top Team/Microelectronics Corp.
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating MOS transistors having anti-punchthrough im...
- Patent number 5,550,074
- Issue date Aug 27, 1996
- United Microelectronics Corp.
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self-aligned contact using a liquid-phase o...
- Patent number 5,547,900
- Issue date Aug 20, 1996
- United Microelectronics Corporation
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an asymmetric lightly doped drain transistor...
- Patent number 5,510,279
- Issue date Apr 23, 1996
- United Microelectronics Corp.
- Sun-Chieh Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective tungsten sidewall and bottom contact formation
- Patent number 5,504,038
- Issue date Apr 2, 1996
- United Microelectronics Corporation
- Sun-Chieh Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating gate oxide layers of different thicknesses
- Patent number 5,502,009
- Issue date Mar 26, 1996
- United Microelectronics Corp.
- Jengping Lin
- H01 - BASIC ELECTRIC ELEMENTS

Jengping Lin

Person

Patents Grantslast 30 patents

Method for fabricating self-aligned contact hole

Method of fabricating self-aligned contact

Method of manufacturing MOS components having lightly doped drain s...

Method of forming MOSFET devices with heavily doped local channel s...

Method of fabricating a buried contact structure with WSi.sub.x sid...

Method of fabricating FET device with double spacer

Use of oxide spacers formed by liquid phase deposition

Method for fabricating silicide shunt of dual-gate CMOS device

Process for fabricating MOS transistors having anti-punchthrough im...

Method of fabricating a self-aligned contact using a liquid-phase o...

Method of fabricating an asymmetric lightly doped drain transistor...

Method for selective tungsten sidewall and bottom contact formation

Method for fabricating gate oxide layers of different thicknesses